A one-step method to fabricate novel three-dimensional GaP nanopore arrays for enhanced photoelectrochemical hydrogen production

Gallium phosphide nanopore arrays with unique three-dimensional interior architectures (3D GaP NPs) are fabricated by electrochemical etching in a neutral solution. As the photoanodes for photoelectrochemical (PEC) hydrogen production, the 3D GaP NPs exhibited a larger photocurrent density (5.65 mA cm^-2 at 0 V vs. RHE, which is 58.3 and 2.3 times as large as that of the planar wafer and the NPs reported by our group in our previous work respectively) and a lower onset potential (-0.58 V vs. RHE, shifting negatively nearly 300 mV compared with its counterparts in the previous work). Besides the excellent light-trapping characteristics of the nanostructures, electrochemical impedance spectroscopy (EIS) further confirmed that the enhanced PEC performance was ascribed to the more efficient charge separation and transfer, and the increased surface area with the unique 3D NP arrays. Furthermore, the efficient charge separation may be attributed to the passivated surface states by the neutral solution.

Unique Three-Dimensional InP Nanopore Arrays for Improved Photoelectrochemical Hydrogen Production

Ordered three-dimensional (3D) nanostructure arrays hold promise for high-performance energy harvesting and storage devices. Here, we report the fabrication of InP nanopore arrays (NPs) in unique 3D architectures with excellent light trapping characteristic and large surface areas for use as highly active photoelectrodes in photoelectrochemical (PEC) hydrogen evolution devices. The ordered 3D NPs were scalably synthesized by a facile two-step etching process of (1) anodic etching of InP in neutral 3 M NaCl electrolytes to realize nanoporous structures and (2) wet chemical etching in HCl/H3PO4 (volume ratio of 1:3) solutions for removing the remaining top irregular layer. Importantly, we demonstrated that the use of neutral electrolyte of NaCl instead of other solutions, such as HCl, in anodic etching of InP can significantly passivate the surface states of 3D NPs. As a result, the maximum photoconversion efficiency obtained with ∼15.7 μm thick 3D NPs was 0.95%, which was 7.3 and 1.4 times higher than that of planar and 2D NPs. Electrochemical impedance spectroscopy and photoluminescence analyses further clarified that the improved PEC performance was attributed to the enhanced charge transfer across 3D NPs/electrolyte interfaces, the improved charge separation at 3D NPs/electrolyte junction, and the increased PEC active surface areas with our unique 3D NP arrays.

Formation of uniform and square nanopore arrays on (100) InP surfaces by a two-step etching method

Uniform and square single-crystal InP nanopore arrays have been successfully fabricated on a (100) n-InP surface by a two-step etching method. The characteristic of slow etching rates in four equivalent crystalline (011) facets of (100) n-InP in a mixture of pure HCl and pure H(3)PO(4) has been found, which is the main reason for the formation of square single-crystal InP nanopores. The distribution of nanopores can be closely associated with the distribution of carriers in the semiconductor during the electrochemical etching process. An oscillating behaviour of current has been observed, which can probably be attributed to the oscillations in concentration of the electrolyte at the pore tips caused by diffusion of the electrolyte in the nanopore channels.

Simultaneous observation of current oscillations and porous film growth during anodization of InP

The observation of spontaneous oscillations in current during the anodization of InP in relatively high concentrations of KOH electrolytes is reported. Oscillations were observed under potential sweep and constant potential conditions. Well-defined oscillations are observed during linear potential sweeps of InP in 5 mol dm(-)(3) KOH to potentials above approximately 1.7 V (SCE) at scan rates in the range of 50 to 500 mV s(-)(1). The oscillations observed exhibit an asymmetrical current versus potential profile, and the charge per cycle was found to increase linearly with potential. More complex oscillatory behavior was observed under constant potential conditions. Periodic damped oscillations are observed in high concentrations of electrolyte whereas undamped sinusoidal oscillations are observed in relatively lower concentrations. In both cases, the anodization of InP results in porous InP formation, and the current in the oscillatory region corresponds to the cyclical effective area changes due to pitting dissolution of the InP surface with the coincidental growth of a thick porous In(2)O(3) film.