Copper nanowire synthesis by directed electrochemical nanowire assembly

The growth of high aspect ratio copper nanowires with lengths of up to several micrometers and diameters of about 100 nm via directed electrochemical nanowire assembly (DENA) is presented.

Biofabrication methods for the patterned assembly and synthesis of viral nanotemplates

This paper reports on novel methodologies for the patterning and templated synthesis of virus-structured nanomaterials in two- and three-dimensional microfabricated architectures using the Tobacco mosaic virus (TMV). The TMV is a high aspect ratio biological molecule which can be engineered to include amino acids with enhanced binding properties. These modifications facilitate self-assembly of the TMV onto various substrates and enable its use as a template for the synthesis of nanostructured materials. This work focuses on the combination of this bottom-up biologically inspired fabrication method with standard top-down micromachining processes that allow direct integration of the virus-structured materials into batch-fabricated devices. Photolithographic patterning of uncoated as well as nickel-coated TMV nanostructures has been achieved using a lift-off process in both solvent and mild basic solutions and their assembly onto three-dimensional polymer and silicon microstructures is demonstrated. In addition to these patterning techniques, in situ formation of metal oxide TMV coatings in patterned microfabricated environments is shown using atomic layer deposition directly on the nickel-coated viruses. The biofabrication 'process toolbox' presented in this work offers a simple and versatile alternative for the hierarchical patterning and incorporation of biotemplated nanomaterials into micro/nanofabrication schemes.

Low-temperature vapour-liquid-solid (VLS) growth of vertically aligned silicon oxide nanowires using concurrent ion bombardment

Vertically aligned silicon oxide nanowires can be synthesized over a large area by a low-temperature, ion-enhanced, reactive vapour-liquid-solid (VLS) method. Synthesis of these randomly ordered arrays begins with a thin indium film deposited on a Si or SiO(2) surface. At the processing temperature of 190 degrees C, the indium film becomes a self-organized seed layer of molten droplets, receiving atomic silicon from a DC magnetron sputtering source rather than from the gaseous precursors used in conventional VLS growth. Simultaneous vigorous ion bombardment aligns the objects vertically and expedites mixing of oxygen and silicon into the indium. Silicon oxide precipitates from each droplet in the form of multiple thin strands having diameters as small as 5 nm. These strands form a single loose bundle growing normal to the surface, eventually consolidating to form one nanowire. The vertical rate of growth can reach 300 nm min(-1) in an environment containing argon, hydrogen, and traces of water vapour. This paper discusses the physical and chemical factors leading to the formation of the nanostructures. It also demonstrates how the shape of the resulting nanostructures can be further controlled by sputtering, during both VLS growth and post-VLS processing. Key technological advantages of the developed process are nanowire growth at low substrate temperatures and the ability to form aligned nanostructure arrays, without the use of lithography or templates, on any substrate onto which a thin silicon film can be deposited.