In Situ Kinetic Observations on Crystal Nucleation and Growth

Nucleation and growth are critical steps in crystallization, which plays an important role in determining crystal structure, size, morphology, and purity. Therefore, understanding the mechanisms of nucleation and growth is crucial to realize the controllable fabrication of crystalline products with desired and reproducible properties. Based on classical models, the initial crystal nucleus is formed by the spontaneous aggregation of ions, atoms, or molecules, and crystal growth is dependent on the monomer's diffusion and the surface reaction. Recently, numerous in situ investigations on crystallization dynamics have uncovered the existence of nonclassical mechanisms. This review provides a summary and highlights the in situ studies of crystal nucleation and growth, with a particular emphasis on the state-of-the-art research progress since the year 2016, and includes technological advances, atomic-scale observations, substrate- and temperature-dependent nucleation and growth, and the progress achieved in the various materials: metals, alloys, metallic compounds, colloids, and proteins. Finally, the forthcoming opportunities and challenges in this fascinating field are discussed.

Influence of the Electron Beam and the Choice of Heating Membrane on the Evolution of Si Nanowires’ Morphology in In Situ TEM

We used in situ transmission electron microscopy (TEM) to observe the dynamic changes of Si nanowires under electron beam irradiation. We found evidence of structural evolutions under TEM observation due to a combination of electron beam and thermal effects. Two types of heating holders were used: a carbon membrane, and a silicon nitride membrane. Different evolution of Si nanowires on these membranes was observed. Regarding the heating of Si nanowires on a C membrane at 800 °C and above, a serious degradation dependent on the diameter of the Si nanowire was observed under the electron beam, with the formation of Si carbide. When the membrane was changed to Si nitride, a reversible sectioning and welding of the Si nanowire was observed.

Anisotropic atomistic evolution during the sublimation of polar InAs nanowires

Sublimation is an interesting phenomenon that is frequently observed in nature. The thermal behavior of InAs NWs with As-face polarity and the [1[combining macron]1[combining macron]1[combining macron]] growth direction of the zinc blende structure were studied by using in situ transmission electron microscopy (TEM). In this study, the anisotropic morphological and atomistic evolution of InAs nanowires (NWs) was observed during decomposition. Two specific phenomena were observed during the continuous heating of the NWs as observed using the TEM: the decomposition of the InAs NWs around 380 °C, much lower than the melting temperature, and the formation of particular crystallographic facets during decomposition. The low decomposition temperature is related to vaporization under the vacuum conditions of the TEM. The anisotropic decomposition of the InAs NWs during heating can be explained based on the polarity and the surface energy difference of the zinc blende structure of InAs. For example, the decomposition along the [111] direction (that is, the indium-atom-terminated plane) was continuous, resulting in a few high-index planes, for example, (022), (3[combining macron]1[combining macron]1[combining macron]), and (200), whereas that in the opposite direction (the [1[combining macron]1[combining macron]1[combining macron]] direction) occurred abruptly with the formation of ledges and steps on the (1[combining macron]1[combining macron]1[combining macron]) planes, accompanied by the generation of small grooves on the surface of the NWs. Finally, density functional theory calculations were conducted to understand the sublimation of the InAs NWs from a theoretical point of view. This study is meaningful that it provides an insight into the microstructural evolution of polar nanomaterials during heating by theoretical and experimental approaches.

Development of in situ optical-electrical MEMS platform for semiconductor characterization

In situ transmission electron microscopy (TEM) technology has become one of the fastest growing areas in TEM research in recent years. This technique allows researchers to investigate the dynamic response of materials to external stimuli inside the microscope. Optoelectronic functional semiconducting materials play an irreplaceable role in several key fields such as clean energy, communications, and pollution disposal. The ability to observe the dynamic behavior of these materials under real working conditions using advanced TEM technologies would provide an in-depth understanding of their working mechanisms, enabling further improvement of their properties. In this work, we designed a microelectromechanical-system-chip-based system to illuminate a sample inside a transmission electron microscope. This system allows simultaneous in situ optical and electrical measurements, which are crucial for optoelectronic semiconductor characterization.

Recordings and Analysis of Atomic Ledge and Dislocation Movements in InGaAs to Nickelide Nanowire Phase Transformation

The formation of low resistance and self-aligned contacts with thermally stable alloyed phases is a prerequisite for realizing reliable functionality in ultrascaled semiconductor transistors. Detailed structural analysis of the phase transformation accompanying contact alloying can facilitate contact engineering as transistor channels approach a few atoms across. Original in situ heating transmission electron microscopy studies are carried out to record and analyze the atomic scale dynamics of contact alloy formation between Ni and In_0.53 Ga_0.47 As nanowire channels. It is observed that the nickelide reacts on the In_0.53 Ga_0.47 As (111) || Ni₂ In_0.53 Ga_0.47 As (0001) interface with atomic ledge propagation along the Ni₂ In_0.53 Ga_0.47 As [101¯0] direction. Ledges nucleate as a train of strained single-bilayers and propagate in-plane as double-bilayers that are associated with a misfit dislocation of b→=2c3[0001]. The atomic structure is reconstructed to explain this phase transformation that involves collective gliding of three Shockley partials in In_0.53 Ga_0.47 As lattice to cancel out shear stress and the formation of misfit dislocations to compensate the large lattice mismatch in the newly formed nickelide phase and the In_0.53 Ga_0.47 As layers. This work demonstrates the applicability of interfacial disconnection (ledge + dislocation) theory in a nanowire channel during thermally induced phase transformation that is typical in metal/III-V semiconductor reactions.

Can We Optimize Arc Discharge and Laser Ablation for Well-Controlled Carbon Nanotube Synthesis?

Although many methods have been documented for carbon nanotube (CNT) synthesis, still, we notice many arguments, criticisms, and appeals for its optimization and process control. Industrial grade CNT production is urgent such that invention of novel methods and engineering principles for large-scale synthesis are needed. Here, we comprehensively review arc discharge (AD) and laser ablation (LA) methods with highlighted features for CNT production. We also display the growth mechanisms of CNT with reasonable grassroots knowledge to make the synthesis more efficient. We postulate the latest developments in engineering carbon feedstock, catalysts, and temperature cum other minor reaction parameters to optimize the CNT yield with desired diameter and chirality. The rate limiting steps of AD and LA are highlighted because of their direct role in tuning the growth process. Future roadmap towards the exploration of CNT synthesis methods is also outlined.