Ultra long SiC/SiO2 core-shell nanocables from organic precursor

Synthesis and optical property of large-scale centimetres-long silicon carbide nanowires by catalyst-free CVD route under superatmospheric pressure conditions

Large-scale centimetres-long single-crystal β-SiC nanowires have been prepared using CH(4) as the carbon source and SiO or the mixture of Si and SiO(2) as the silicon source by a simple catalyst-free CVD route under superatmospheric pressure conditions. The nanowries grown on ceramic boat or corundum substrates, with lengths of several centimetres and the average diameters of around 40 nm, were composed of single-crystal β-SiC core along the [111] direction and amorphous SiO(2) shell of about 1-30 nm thick depending on the growth position along the flowing direction of the carrier gas. The total gas pressure is an important factor for the synthesis of the large-scale centimetres-long β-SiC nanowires, which can easily adjust the pressure of the vapors to supersaturation condition. The growth of the nanowires was governed by the Vapor-Solid mechanism. The β-SiC nanowires showed an intense blue light emission at room temperature.

One-Step Chemical Vapor Growth of Ge/SiCxNy Nanocables

Single-step synthesis of one-dimensional Ge/SiCxNy core-shell nanocables was achieved by chemical vapor deposition of the molecular precursor [Ge{N(SiMe3)2}2]. Single crystalline Ge nanowires (diameter approximately 60 nm) embedded in uniform SiCxNy shells were obtained in high yields, whereby the growth process was not influenced by the nature of substrates. The shell material exhibited high oxidation and chemical resistance at elevated temperatures (up to 250 degrees C) resulting in the preservation of size-dependent semiconductor properties of germanium nanowires, such as intact transport of charge carriers and reduction of energy consumption, when compared to pure Ge nanowires.