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Yoo EJ, Lyu M, Yun JH, Kang CJ, Choi YJ, Wang L. Resistive Switching Behavior in Organic-Inorganic Hybrid CH3 NH3 PbI3-x Clx Perovskite for Resistive Random Access Memory Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:6170-5. [PMID: 26331363 DOI: 10.1002/adma.201502889] [Citation(s) in RCA: 157] [Impact Index Per Article: 17.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/15/2015] [Revised: 07/21/2015] [Indexed: 05/23/2023]
Abstract
The CH3 NH3 PbI3- x Clx organic-inorganic hybrid perovskite material demonstrates remarkable resistive switching behavior, which can be applicable in resistive random access memory devices. The simply designed Au/CH3 NH3 PbI3- x Clx /FTO structure is fabricated by a low-temperature, solution-processable method, which exhibits remarkable bipolar resistive switching and nonvolatile properties.
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Affiliation(s)
- Eun Ji Yoo
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 143-747, South Korea
- Nanomaterials Centre, School of Chemical Engineering and AIBN, The University of Queensland, St Lucia, Brisbane, QLD, 4072, Australia
| | - Miaoqiang Lyu
- Nanomaterials Centre, School of Chemical Engineering and AIBN, The University of Queensland, St Lucia, Brisbane, QLD, 4072, Australia
| | - Jung-Ho Yun
- Nanomaterials Centre, School of Chemical Engineering and AIBN, The University of Queensland, St Lucia, Brisbane, QLD, 4072, Australia
| | - Chi Jung Kang
- Department of Physics, Myong Ji University, Yongin-si, 449-728, South Korea
| | - Young Jin Choi
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 143-747, South Korea
| | - Lianzhou Wang
- Nanomaterials Centre, School of Chemical Engineering and AIBN, The University of Queensland, St Lucia, Brisbane, QLD, 4072, Australia
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