1
|
Liang Y, Yang Y, Wang J, Cheng X, Yuan C, Zhu X, Xie H, Wang Z, Li H, Feng S. Pressure-Induced Irreversible Metallization Accompanying Phase Transition of Chalcopyrite Cu(In 0.7Ga 0.3)Se 2. Inorg Chem 2024; 63:14623-14629. [PMID: 39038226 DOI: 10.1021/acs.inorgchem.4c02137] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/24/2024]
Abstract
Chalcopyrite copper-indium-gallium diselenides (CIGS) have emerged as promising materials with remarkable electronic properties and potential applicability to high-efficiency solar cells. The crystal and electronic structures of CIGS can be continuously tuned from their initial states under pressure. Although pressure-induced band gap closure in CIGS has been predicted in extensive theoretical studies, it has not been supported by experimental evidence. Here, we comprehensively investigate the pressure-dependent optical, electronic, and structural properties of Cu(In0.7Ga0.3)Se2 up to 42.6 GPa. Our experimental results reveal an irreversible electronic transition from the semiconducting to the metallic state at 14.3 GPa. Under compression, the Cu(In0.7Ga0.3)Se2 structure evolves from a tetragonal I4̅2d phase to an orthorhombic Pna21 phase, which has not been previously reported in chalcopyrite. More intriguingly, the Pna21 phase is irreversible and possesses smaller Cu-Se and In/Ga-Se bond lengths and a smaller Cu-Se-Cu bond angle than the I4̅2d phase. Density functional theory calculations indicate a lower enthalpy of the Pna21 phase than that of the I4̅2d phase at pressures above 10.6 GPa. Meanwhile, density of states calculations illustrate that metallization arises from the overlap of the Se p and Cu d orbitals as the bond length reduces. This pressure-induced behavior could facilitate the development of novel devices with various phenomena involving strong coupling of the mechanical, electrical, and optical properties of chalcopyrite.
Collapse
Affiliation(s)
- Yongfu Liang
- Henan Key Laboratory of Magnetoelectronic Information Functional Materials, School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou 450002, People's Republic of China
| | - Yuping Yang
- Henan Key Laboratory of Magnetoelectronic Information Functional Materials, School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou 450002, People's Republic of China
| | - Junbo Wang
- Henan Key Laboratory of Magnetoelectronic Information Functional Materials, School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou 450002, People's Republic of China
| | - Xuerui Cheng
- Henan Key Laboratory of Magnetoelectronic Information Functional Materials, School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou 450002, People's Republic of China
- Anhui Province Key Laboratory of Pollutant Sensitive Materials and Environmental Remediation, Huaibei Normal University, Huaibei, Anhui 235000, P. R. China
| | - Chaosheng Yuan
- Henan Key Laboratory of Magnetoelectronic Information Functional Materials, School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou 450002, People's Republic of China
| | - Xiang Zhu
- Henan Key Laboratory of Magnetoelectronic Information Functional Materials, School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou 450002, People's Republic of China
| | - Hui Xie
- College of Physics and Electronic Engineering, Hebei Minzu Normal University, Chengde 067000, P. R. China
| | - Zheng Wang
- Henan Key Laboratory of Magnetoelectronic Information Functional Materials, School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou 450002, People's Republic of China
| | - Haining Li
- Henan Key Laboratory of Magnetoelectronic Information Functional Materials, School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou 450002, People's Republic of China
| | - Shiquan Feng
- Henan Key Laboratory of Magnetoelectronic Information Functional Materials, School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou 450002, People's Republic of China
| |
Collapse
|
2
|
Park BI, Hwang Y, Lee SY, Lee JS, Park JK, Jeong J, Kim JY, Kim B, Cho SH, Lee DK. Solvent-free synthesis of Cu2ZnSnS4 nanocrystals: a facile, green, up-scalable route for low cost photovoltaic cells. NANOSCALE 2014; 6:11703-11711. [PMID: 25091974 DOI: 10.1039/c4nr02564d] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Efficient Cu2ZnSnSe4 (CZTSe) solar cells were fabricated with a simple, environmentally friendly, and scalable synthetic method for Cu2ZnSnS4 (CZTS) nanocrystals. CZTS nanoparticles were mechanochemically synthesized from elemental precursors on a relatively large scale (∼20 g), during which no solvents or additives were used, thus alleviating the complex process of particle synthesis. An analysis of the time evolution of the crystalline phase and morphology of precursor powders revealed that the formation of the CZTS compound was completed in 0.5 h once initiated, suggesting that the mechanochemically induced self-propagating reaction prevails. CZTS ink was prepared by dispersing the as-synthesized nanoparticles in an environmentally benign solvent (160 mg mL(-1) in ethanol) without using any additives, after which it was cast onto Mo-coated glass substrates by a doctor-blade method. Subsequent reactive annealing at 560 °C under a Se-containing atmosphere resulted in substantial grain growth along with the nearly complete substitution of Se. The CZTSe solar cells therefrom exhibited power conversion efficiency levels as high as 6.1% (based on the active area, 0.44 cm(2)) with a relatively high open-circuit voltage (0.42 V) in comparison with the bandgap energy of 1.0 eV.
Collapse
Affiliation(s)
- Bo-In Park
- Center for Materials Architecturing, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea.
| | | | | | | | | | | | | | | | | | | |
Collapse
|
3
|
E. Zaghi A, Buffière M, Brammertz G, Batuk M, Lenaers N, Kniknie B, Hadermann J, Meuris M, Poortmans J, Vleugels J. Mechanical synthesis of high purity Cu–In–Se alloy nanopowder as precursor for printed CISe thin film solar cells. ADV POWDER TECHNOL 2014. [DOI: 10.1016/j.apt.2014.03.003] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022]
|