Instrumentation for Reliably Determining Porous Silicon Photoluminescence Responses to Gaseous Analyte Vapors

Interplay Between Silicon Nanocrystal Size and Local Environment Within Porous Silicon on the Analyte-Dependent Photoluminescence Response

Porous silicon (pSi) exhibits strong photoluminescence (PL) and its PL is often exploited for chemical sensor development. However, the sensor response is not uniform across a pSi specimen. We use co-localized confocal PL and Raman scattering mapping to establish a relationship between the analyte-induced PL response and the silicon nanocrystallite size, size distribution, and amorphous silicon (aSi) contribution across a pSi specimen. Using toluene as a model analyte, high analyte-induced PL response is associated with areas within the specimen that have (i) low aSi content, (ii) silicon nanocrystallites having diameters between 2 and 5 nm, and (iii) silicon nanocrystallites that exhibit a narrow size distributions (≤1% relative standard deviation).

Origin of Analyte-Induced Porous Silicon Photoluminescence Quenching

We report on gaseous analyte-induced photoluminescence (PL) quenching of porous silicon, as-prepared (ap-pSi) and oxidized (ox-pSi). By using steady-state and emission wavelength-dependent time-resolved intensity luminescence measurements in concert with a global analysis scheme, we find that the analyte-induced quenching is best described by a three-component static quenching model. In the model, there are blue, green, and red emitters (associated with the nanocrystallite core and surface trap states) that each exhibit unique analyte-emitter association constants and these association constants are a consequence of differences in the pSi surface chemistries.