1
|
Chen Y, Wang B. Effect of Diatomite on the Thermal Degradation Behavior of Polypropylene and Formation of Graphene Products. Polymers (Basel) 2022; 14:polym14183764. [PMID: 36145906 PMCID: PMC9501155 DOI: 10.3390/polym14183764] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/28/2022] [Revised: 09/02/2022] [Accepted: 09/06/2022] [Indexed: 11/19/2022] Open
Abstract
In this work, the thermogravimetry–Fourier transform infrared spectroscopy (TG–FTIR) and gas chromatography–mass spectrometry (GC–MS) techniques are used to investigate the thermal degradation behavior of polypropylene (PP) with 20 wt.% diatomite (DM). The initial decomposition temperature of these blends was 17 °C lower than that of pristine PP, and more olefin degradation products were formed during the pyrolysis process under Ar atmosphere. These results could be attributed to the catalytic effects of DM on the degradation of PP and the changes of PP chain scission pathways around the particles (more β scission happened via the secondary radical transfer). These olefins could be caught by DM through the Si–O–C bond formed during the heat–treatment around 400~500 °C. The formation of the cross–linked structure could facilitate the growth of graphene during a high–temperature graphitization process.
Collapse
Affiliation(s)
| | - Biao Wang
- Correspondence: ; Tel.: +86-21-6779-2731
| |
Collapse
|
2
|
Abstract
Magnetoresistance (MR) is the variation of a material’s resistivity under the presence of external magnetic fields. Reading heads in hard disk drives (HDDs) are the most common applications of MR sensors. Since the discovery of giant magnetoresistance (GMR) in the 1980s and the application of GMR reading heads in the 1990s, the MR sensors lead to the rapid developments of the HDDs’ storage capacity. Nowadays, MR sensors are employed in magnetic storage, position sensing, current sensing, non-destructive monitoring, and biomedical sensing systems. MR sensors are used to transfer the variation of the target magnetic fields to other signals such as resistance change. This review illustrates the progress of developing nanoconstructed MR materials/structures. Meanwhile, it offers an overview of current trends regarding the applications of MR sensors. In addition, the challenges in designing/developing MR sensors with enhanced performance and cost-efficiency are discussed in this review.
Collapse
|
3
|
Ultrasensitive and Highly Selective Graphene-Based Field-Effect Transistor Biosensor for Anti-Diuretic Hormone Detection. SENSORS 2020; 20:s20092642. [PMID: 32384631 PMCID: PMC7248865 DOI: 10.3390/s20092642] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/06/2020] [Revised: 04/10/2020] [Accepted: 04/13/2020] [Indexed: 01/06/2023]
Abstract
Nephrogenic diabetes insipidus (NDI), which can be congenital or acquired, results from the failure of the kidney to respond to the anti-diuretic hormone (ADH). This will lead to excessive water loss from the body in the form of urine. The kidney, therefore, has a crucial role in maintaining water balance and it is vital to restore this function in an artificial kidney. Herein, an ultrasensitive and highly selective aptameric graphene-based field-effect transistor (GFET) sensor for ADH detection was developed by directly immobilizing ADH-specific aptamer on a surface-modified suspended graphene channel. This direct immobilization of aptamer on the graphene surface is an attempt to mimic the functionality of collecting tube V 2 receptors in the ADH biosensor. This aptamer was then used as a probe to capture ADH peptide at the sensing area which leads to changes in the concentration of charge carriers in the graphene channel. The biosensor shows a significant increment in the relative change of current ratio from 5.76 to 22.60 with the increase of ADH concentration ranging from 10 ag/mL to 1 pg/mL. The ADH biosensor thus exhibits a sensitivity of 50.00 µA· ( g / mL ) - 1 with a limit of detection as low as 3.55 ag/mL. In specificity analysis, the ADH biosensor demonstrated a higher current value which is 338.64 µA for ADH-spiked in phosphate-buffered saline (PBS) and 557.89 µA for ADH-spiked in human serum in comparison with other biomolecules tested. This experimental evidence shows that the ADH biosensor is ultrasensitive and highly selective towards ADH in PBS buffer and ADH-spiked in human serum.
Collapse
|
4
|
Yu J, Wang L, Hao Z, Luo Y, Sun C, Wang J, Han Y, Xiong B, Li H. Van der Waals Epitaxy of III-Nitride Semiconductors Based on 2D Materials for Flexible Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1903407. [PMID: 31486182 DOI: 10.1002/adma.201903407] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2019] [Revised: 07/07/2019] [Indexed: 06/10/2023]
Abstract
III-nitride semiconductors have attracted considerable attention in recent years owing to their excellent physical properties and wide applications in solid-state lighting, flat-panel displays, and solar energy and power electronics. Generally, GaN-based devices are heteroepitaxially grown on c-plane sapphire, Si (111), or 6H-SiC substrates. However, it is very difficult to release the GaN-based films from such single-crystalline substrates and transfer them onto other foreign substrates. Consequently, it is difficult to meet the ever-increasing demand for wearable and foldable applications. On the other hand, sp2 -bonded two-dimensional (2D) materials, which exhibit hexagonal in-plane lattice arrangements and weakly bonded layers, can be transferred onto flexible substrates with ease. Hence, flexible III-nitride devices can be implemented through such 2D release layers. In this progress report, the recent advances in the different strategies for the growth of III-nitrides based on 2D materials are reviewed, with a focus on van der Waals epitaxy and transfer printing. Various attempts are presented and discussed herein, including the different kinds of 2D materials (graphene, hexagonal boron nitride, and transition metal dichalcogenides) used as release layers. Finally, current challenges and future perspectives regarding the development of flexible III-nitride devices are discussed.
Collapse
Affiliation(s)
- Jiadong Yu
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Flexible Intelligent Optoelectronic Device and Technology Center, Institute of Flexible Electronics Technology of THU, Zhejiang, Jiaxing, 314006, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Lai Wang
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Zhibiao Hao
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Yi Luo
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Flexible Intelligent Optoelectronic Device and Technology Center, Institute of Flexible Electronics Technology of THU, Zhejiang, Jiaxing, 314006, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Changzheng Sun
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Jian Wang
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Yanjun Han
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Flexible Intelligent Optoelectronic Device and Technology Center, Institute of Flexible Electronics Technology of THU, Zhejiang, Jiaxing, 314006, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Bing Xiong
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Hongtao Li
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
| |
Collapse
|
6
|
Sagar RUR, Galluzzi M, Wan C, Shehzad K, Navale ST, Anwar T, Mane RS, Piao HG, Ali A, Stadler FJ. Large, Linear, and Tunable Positive Magnetoresistance of Mechanically Stable Graphene Foam-Toward High-Performance Magnetic Field Sensors. ACS APPLIED MATERIALS & INTERFACES 2017; 9:1891-1898. [PMID: 27977125 DOI: 10.1021/acsami.6b13044] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Here, we present the first observation of magneto-transport properties of graphene foam (GF) composed of a few layers in a wide temperature range of 2-300 K. Large room-temperature linear positive magnetoresistance (PMR ≈ 171% at B ≈ 9 T) has been detected. The largest PMR (∼213%) has been achieved at 2 K under a magnetic field of 9 T, which can be tuned by the addition of poly(methyl methacrylate) to the porous structure of the foam. This remarkable magnetoresistance may be the result of quadratic magnetoresistance. The excellent magneto-transport properties of GF open a way toward three-dimensional graphene-based magnetoelectronic devices.
Collapse
Affiliation(s)
| | | | - Caihua Wan
- Institute of Physics, Chinese Academy of Sciences , Beijing, 100190, PR China
| | - Khurram Shehzad
- Department of Information Science and Electronic Engineering, Zhejiang University , Hangzhou 310027, PR China
| | | | - Tauseef Anwar
- Beijing Key Laboratory of Fine Ceramics, Institute of Nuclear and New Energy Technology, Tsinghua University , Beijing 100084, PR China
| | - Rajaram S Mane
- School of Physical Sciences, Swami Ramanand Teerth Marathwada University , Nanded 431606, India
- Department of Chemistry, College of Science, Bld-5, King Saud University , Riyadh, Saudi Arabia
| | - Hong-Guang Piao
- College of Science, China Three Gorges University , Yichang 443002, PR China
| | - Abid Ali
- Department of Chemistry, Quaid-i-Azam University , Islamabad 45320, Pakistan
| | | |
Collapse
|
7
|
Lee HC, Liu WW, Chai SP, Mohamed AR, Aziz A, Khe CS, Hidayah NS, Hashim U. Review of the synthesis, transfer, characterization and growth mechanisms of single and multilayer graphene. RSC Adv 2017. [DOI: 10.1039/c7ra00392g] [Citation(s) in RCA: 214] [Impact Index Per Article: 30.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022] Open
Abstract
Graphene has emerged as the most popular topic in the active research field since graphene's discovery in 2004 by Andrei Geim and Kostya Novoselov.
Collapse
Affiliation(s)
- H. Cheun Lee
- Institute of Nano Electronic Engineering
- Universiti Malaysia Perlis
- 01000 Kangar
- Malaysia
| | - Wei-Wen Liu
- Institute of Nano Electronic Engineering
- Universiti Malaysia Perlis
- 01000 Kangar
- Malaysia
| | | | - Abdul Rahman Mohamed
- School of Chemical Engineering
- Engineering Campus
- Universiti Sains Malaysia
- 14300 Nibong Tebal
- Malaysia
| | - Azizan Aziz
- School of Material and Mineral Resources Engineering
- Engineering Campus
- Universiti Sains Malaysia
- 14300 Nibong Tebal
- Malaysia
| | - Cheng-Seong Khe
- Department of Fundamental and Applied Sciences
- Universiti Teknologi PETRONAS
- Bandar Seri Iskandar
- Malaysia
| | - N. M. S. Hidayah
- Institute of Nano Electronic Engineering
- Universiti Malaysia Perlis
- 01000 Kangar
- Malaysia
| | - U. Hashim
- Institute of Nano Electronic Engineering
- Universiti Malaysia Perlis
- 01000 Kangar
- Malaysia
| |
Collapse
|