Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistors

Recovery of the scattering symmetry looking at the conductance in asymmetric graphene nano-ribbons systems using pseudo-spin filters

In this work we study some applications for pseudo-spin filters. The filters are potential barriers with hyperboloid sub-band contributions that are locally applied over graphene nano-ribbons. These filters modulate the pseudo-spin and the quirality of the wave-function allowing the recovery of the conductance loss due to imperfections, bends, or constrictions (asymmetries) found in the system. The recovery of the conductance is fulfilled by a direct manipulation of the pseudo-spin polarization at both sides of the device by localizing the filters at the system's entrance and exit points. This procedure allows the recovery of the wave-function symmetry at these points with the consequent recovery of the conductance, even when it is zero, regardless of the different internal regions that affect the transmission, i.e. the filters are used as patches for damaged regions. Our results can be extrapolated for spatially asymmetrical potentials generated by electrical (or magnetic) impurities.

High sensitivity glucose detection at extremely low concentrations using a MoS2-based field-effect transistor

In recent years, molybdenum disulfide (MoS₂) based field-effect transistors (FETs) have attracted much attention because of the unique properties of MoS₂ nano-materials as an ideal channel material. Using a MoS₂ FET as a glucose solution biosensor has the advantages of high sensitivity and rapid response. This paper is concerned with the fabrication of a bilayer MoS₂-based FET and the study of its application in the high sensitivity detection of an extremely low concentration glucose solution. It was found that the source-drain current (I_ds) increases as the concentration of the glucose solution increases at the same gate voltage (V_gs) and drain voltage (V_ds). The sensitivity of the biosensor as high as 260.75 mA mM⁻¹ has been calculated and the detection limit of 300 nM was measured. The unknown concentration of a glucose solution was also detected using data based on the relationship between I_ds and glucose solution concentration. In addition, many significant advantages of the biosensor were observed, such as short response time (<1 s), good stability, wide linear detection range (300 nM to 30 mM) and the micro-detection of glucose solutions. These unique properties make the bilayer MoS₂-based FET a great potential candidate for next generation biosensors.

The high sensitivity (260.75 mA mM⁻¹) detection of an extremely low concentration (300 nM) glucose solution is demonstrated by the bilayer MoS₂ FET based biosensor.

Photovoltaic Effect in Graphene/MoS2/Si Van der Waals Heterostructures

This paper presents a study on the photovoltaic effect of a graphene/MoS2/Si double heterostructure, grown by rapid chemical vapor deposition. It was found that the double junctions of the graphene/MoS2 Schottky junction and the MoS2/Si heterostructure played important roles in enhancing the device’s performance. They allowed more electron-hole pairs to be efficiently generated, separated, and collected in the graphene/MoS2/Si double interface. The device demonstrated an open circuit voltage of 0.51 V and an energy conversion efficiency of 2.58% under an optical illumination of 500 mW/cm2. The photovoltaic effect of the device was partly attributed to the strong light absorption and photoresponse of the few-layer MoS2 film, and partly ascribed to the high carrier-collection-rate of the double van der Waals heterostructures (vdWHs) in the device.

Red-Shift Effect and Sensitive Responsivity of MoS2/ZnO Flexible Photodetectors

The optoelectronic characteristics of molybdenum disulfide (MoS2)/ZnO flexible photodetectors are investigated. A red-shift effect and improved photocurrent properties of the flexible devices are demonstrated. MoS2 doping improved the photocurrent properties and conductivity. The photocurrent/dark current ratios of pure ZnO and MoS2/ZnO flexible photodetectors were 10(3) and 10(4), respectively. The responsivity of MoS2/ZnO increased, and the wavelength was red-shifted.

Fabrication and investigation of the optoelectrical properties of MoS2/CdS heterojunction solar cells

Molybdenum disulfide (MoS2)/cadmium sulfide (CdS) heterojunction solar cells were successfully synthesized via chemical bath deposition (CBD) and chemical vapor deposition (CVD). The as-grown CdS film on a fluorine tin oxide (FTO) substrate deposited by CBD is continuous and compact. The MoS2 film deposited by CVD is homogeneous and continuous, with a uniform color and a thickness of approximately 10 nm. The optical absorption range of the MoS2/CdS heterojunction covers the visible and near-infrared spectral regions of 350 to 800 nm, which is beneficial for the improvement of solar cell efficiency. Moreover, the MoS2/CdS solar cell exhibits good current-voltage (I-V) characteristics and pronounced photovoltaic behavior, with an open-circuit voltage of 0.66 V and a short-circuit current density of 0.227 × 10(-6) A/cm(2), comparable to the results obtained from other MoS2-based solar cells. This research is critical to investigate more efficient and stable solar cells based on graphene-like materials in the future.