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Akbari-Saatlu M, Procek M, Mattsson C, Thungström G, Nilsson HE, Xiong W, Xu B, Li Y, Radamson HH. Silicon Nanowires for Gas Sensing: A Review. NANOMATERIALS (BASEL, SWITZERLAND) 2020; 10:E2215. [PMID: 33172221 PMCID: PMC7694983 DOI: 10.3390/nano10112215] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/21/2020] [Revised: 11/02/2020] [Accepted: 11/04/2020] [Indexed: 01/03/2023]
Abstract
The unique electronic properties of semiconductor nanowires, in particular silicon nanowires (SiNWs), are attractive for the label-free, real-time, and sensitive detection of various gases. Therefore, over the past two decades, extensive efforts have been made to study the gas sensing function of NWs. This review article presents the recent developments related to the applications of SiNWs for gas sensing. The content begins with the two basic synthesis approaches (top-down and bottom-up) whereby the advantages and disadvantages of each approach have been discussed. Afterwards, the basic sensing mechanism of SiNWs for both resistor and field effect transistor designs have been briefly described whereby the sensitivity and selectivity to gases after different functionalization methods have been further presented. In the final words, the challenges and future opportunities of SiNWs for gas sensing have been discussed.
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Affiliation(s)
- Mehdi Akbari-Saatlu
- Department of Electronics Design, Mid Sweden University, Holmgatan 10, SE-85170 Sundsvall, Sweden; (C.M.); (G.T.); (H.-E.N.)
| | - Marcin Procek
- Department of Electronics Design, Mid Sweden University, Holmgatan 10, SE-85170 Sundsvall, Sweden; (C.M.); (G.T.); (H.-E.N.)
- Department of Optoelectronics, Silesian University of Technology, 2 Krzywoustego St., 44-100 Gliwice, Poland
| | - Claes Mattsson
- Department of Electronics Design, Mid Sweden University, Holmgatan 10, SE-85170 Sundsvall, Sweden; (C.M.); (G.T.); (H.-E.N.)
| | - Göran Thungström
- Department of Electronics Design, Mid Sweden University, Holmgatan 10, SE-85170 Sundsvall, Sweden; (C.M.); (G.T.); (H.-E.N.)
| | - Hans-Erik Nilsson
- Department of Electronics Design, Mid Sweden University, Holmgatan 10, SE-85170 Sundsvall, Sweden; (C.M.); (G.T.); (H.-E.N.)
| | - Wenjuan Xiong
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China; (W.X.); (B.X.); (Y.L.)
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- College of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Buqing Xu
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China; (W.X.); (B.X.); (Y.L.)
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- College of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - You Li
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China; (W.X.); (B.X.); (Y.L.)
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- College of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Henry H. Radamson
- Department of Electronics Design, Mid Sweden University, Holmgatan 10, SE-85170 Sundsvall, Sweden; (C.M.); (G.T.); (H.-E.N.)
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China; (W.X.); (B.X.); (Y.L.)
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- College of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
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Dai B, Wang L, Wang Y, Yu G, Huang X. Single-Cell Nanometric Coating Towards Whole-Cell-Based Biodevices and Biosensors. ChemistrySelect 2018. [DOI: 10.1002/slct.201800963] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Affiliation(s)
- Bing Dai
- School of Technology; Harbin University; Harbin 150086 China
| | - Lei Wang
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage; School of Chemistry and Chemical Engineering; Harbin Institute of Technology; Harbin 150001 China
| | - Yan Wang
- Departament de Química Inorgànica; Facultat de Química; Universitat de Barcelona, C/Martí i Franquès 1-11; Barcelona 08028 Spain
| | - Guangbin Yu
- School of Mechanical and Power Engineering; Harbin University of Science and Technology; Harbin 150080 China
| | - Xin Huang
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage; School of Chemistry and Chemical Engineering; Harbin Institute of Technology; Harbin 150001 China
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Tran VD, Nguyen DH, Nguyen VD, Nguyen VH. Chlorine Gas Sensing Performance of On-Chip Grown ZnO, WO3, and SnO2 Nanowire Sensors. ACS APPLIED MATERIALS & INTERFACES 2016; 8:4828-37. [PMID: 26816341 DOI: 10.1021/acsami.5b08638] [Citation(s) in RCA: 37] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Monitoring toxic chlorine (Cl2) at the parts-per-billion (ppb) level is crucial for safe usage of this gas. Herein, ZnO, WO3, and SnO2 nanowire sensors were fabricated using an on-chip growth technique with chemical vapor deposition. The Cl2 gas-sensing characteristics of the fabricated sensors were systematically investigated. Results demonstrated that SnO2 nanowires exhibited higher sensitivity to Cl2 gas than ZnO and WO3 nanowires. The response (RCl2/Rair) of the SnO2 nanowire sensor to 50 ppb Cl2 at 50 °C was about 57. Hence, SnO2 nanowires can be an excellent sensing material for detecting Cl2 gas at the ppb level under low temperatures. Abnormal sensing characteristics were observed in the WO3 and SnO2 nanowire sensors at certain temperatures; in particular, the response level of these sensors to 5 ppm of Cl2 was lower than that to 2.5 ppm of Cl2. The sensing mechanism of the SnO2 nanowire sensor was also elucidated by determining Cl2 responses under N2 and dry air as carrier gases. We proved that the Cl2 molecule was first directly adsorbed on the metal oxide surface and was then substituted for pre-adsorbed oxygen, followed by lattice oxygen.
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Affiliation(s)
- Van Dang Tran
- International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST) , No 1, Dai Co Viet Street, Hanoi, Vietnam
| | - Duc Hoa Nguyen
- International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST) , No 1, Dai Co Viet Street, Hanoi, Vietnam
| | - Van Duy Nguyen
- International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST) , No 1, Dai Co Viet Street, Hanoi, Vietnam
| | - Van Hieu Nguyen
- International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST) , No 1, Dai Co Viet Street, Hanoi, Vietnam
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