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Wu G, Zhu Q, Zhang T, Zou Z, Wang W, Cao Y, Kong L, Zheng X, Wu Y, Li X, Wu Z, Kang J. Gradient Engineered Light Absorption Layer for Enhanced Carrier Separation Efficiency in Perovskite Solar Cells. NANOSCALE RESEARCH LETTERS 2020; 15:127. [PMID: 32519124 PMCID: PMC7283402 DOI: 10.1186/s11671-020-03359-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/06/2020] [Accepted: 05/27/2020] [Indexed: 06/11/2023]
Abstract
Carrier transport behavior in the perovskite light absorption layer significantly impacts the performance of perovskite solar cells (PSCs). In this work, reduced carrier recombination losses were achieved by the design of a band structure in perovskite materials. An ultrathin (PbI2/PbBr2)n film with a gradient thickness ratio was deposited as the lead halide precursor layer by a thermal evaporation method, and PSCs with a gradient band structure in the perovskite absorption layer were fabricated by a two-step method in ambient atmosphere. For comparison, PSCs with homogeneous perovskite materials of MAPbI3 and MAPbIxBr3 - x were fabricated as well. It is found that the gradient type-II band structure greatly reduces the carrier lifetime and enhances the carrier separation efficiency. As a result, the PSCs with a gradient band structure exhibit an average power conversion efficiency of 17.5%, which is 1-2% higher than that of traditional PSCs. This work provides a novel method for developing high-efficiency PSCs.
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Affiliation(s)
- Gaozhu Wu
- Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, 361005 People’s Republic of China
| | - Qing Zhu
- Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, 361005 People’s Republic of China
| | - Teng Zhang
- Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, 361005 People’s Republic of China
| | - Ziqi Zou
- Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, 361005 People’s Republic of China
| | - Weiping Wang
- Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, 361005 People’s Republic of China
| | - Yiyan Cao
- Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, 361005 People’s Republic of China
| | - Lijing Kong
- Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, 361005 People’s Republic of China
| | - Xuanli Zheng
- Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, 361005 People’s Republic of China
| | - Yaping Wu
- Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, 361005 People’s Republic of China
| | - Xu Li
- Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, 361005 People’s Republic of China
| | - Zhiming Wu
- Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, 361005 People’s Republic of China
| | - Junyong Kang
- Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, 361005 People’s Republic of China
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Han D, Li B, Yang S, Wang X, Gao W, Si Z, Zuo Q, Li Y, Li Y, Duan Q, Wang D. Engineering Charge Transfer Characteristics in Hierarchical Cu₂S QDs @ ZnO Nanoneedles with p⁻n Heterojunctions: Towards Highly Efficient and Recyclable Photocatalysts. NANOMATERIALS (BASEL, SWITZERLAND) 2018; 9:E16. [PMID: 30583591 PMCID: PMC6359091 DOI: 10.3390/nano9010016] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/21/2018] [Revised: 12/18/2018] [Accepted: 12/19/2018] [Indexed: 11/17/2022]
Abstract
Equipped with staggered gap p-n heterojunctions, a new paradigm of photocatalysts based on hierarchically structured nano-match-shaped heterojunctions (NMSHs) Cu₂S quantum dots (QDs)@ZnO nanoneedles (NNs) are successfully developed via engineering the successive ionic layer adsorption and reaction (SILAR). Under UV and visible light illumination, the photocatalytic characteristics of Cu₂S@ZnO heterojunctions with different loading amounts of Cu₂S QDs are evaluated by the corresponding photocatalytic degradation of rhodamine B (RhB) aqueous solution. The results elaborate that the optimized samples (S3 serial specimens with six cycles of SILAR reaction) by means of tailored the band diagram exhibit appreciable improvement of photocatalytic activities among all synthesized samples, attributing to the sensitization of a proper amount of Cu₂S QDs. Such developed architecture not only could form p⁻n junctions with ZnO nanoneedles to facilitate the separation of photo-generated carries but also interact with the surface defects of ZnO NNs to reduce the electron and hole recombination probability. Moreover, the existence of Cu₂S QDs could also extend the light absorption to improve the utilization rate of sunlight. Importantly, under UV light S3 samples demonstrate the remarkably enhanced RhB degradation efficiency, which is clearly testified upon the charge transfer mechanism discussions and evaluations in the present work. Further supplementary investigations illustrate that the developed nanoscale Cu₂S@ZnO heterostructures also possess an excellent photo-stability during our extensive recycling photocatalytic experiments, promising for a wide range of highly efficient and sustainably recyclable photocatalysts applications.
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Affiliation(s)
- Donglai Han
- School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China.
- Engineering Research Center of Optoelectronic Functional Materials, Ministry of Education, Changchun 130022, China.
| | - Boxun Li
- School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China.
| | - Shuo Yang
- Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
| | - Xinying Wang
- School of Engineering and Architecture, Northeast Electric Power University, Jilin City 132012, China.
| | - Wei Gao
- School of Materials Science and Engineering, Jilin University, Changchun 130025, China.
| | - Zhenjun Si
- School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China.
| | - Qinghui Zuo
- School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China.
| | - Yanhui Li
- School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China.
| | - Yanwei Li
- School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China.
| | - Qian Duan
- School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China.
- Engineering Research Center of Optoelectronic Functional Materials, Ministry of Education, Changchun 130022, China.
| | - Dandan Wang
- Quality and Reliability Assurance Department, GLOBALFOUNDRIES (Singapore) Pte. Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406, Singapore.
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Barnett CJ, Castaing A, Jones DR, Lewis AR, Jenkins LJ, Cobley RJ, Maffeis TGG. XPS investigation of titanium contact formation to ZnO nanowires. NANOTECHNOLOGY 2017; 28:085301. [PMID: 28045379 DOI: 10.1088/1361-6528/aa5663] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Ti is often used to form an initial Ohmic interface between ZnO and Au due to its low work function, and the TiO2/ZnO heterojunction is also of great importance for many practical applications of nanoparticles. Here, Ti has been controllably deposited onto hydrothermally grown ZnO nanowires and the formation of metal-semiconductor contact has been investigated using x-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectroscopy and scanning electron microscopy. XPS results showed that that the Ti initially reacts with surface oxygen species to form TiO2, and further deposition results in the formation of oxides with oxidation state numbers lower than four, and eventually metallic Ti on top of the TiO2. The formation of TiC was also observed. XPS showed that the onset of metallic Ti coincided with a Zn 3p core level shift to lower binding energy, indicating upwards band bending and the formation of a rectifying contact. Annealing caused a near-complete conversion of the metallic Ti to TiO2 and caused the Zn 3p to shift back to its original higher binding energy, resulting in downwards band bending and a more Ohmic contact. PL measurements showed that the optical properties of the nanowires are not affected by the contact formation.
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Affiliation(s)
- Chris J Barnett
- Department of Physics, College of Science, Swansea University, Singleton Park, Swansea SA2 8PP, United Kingdom
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Song L, Cui Y, Zhang C, Hu Z, Liu X. Microwave-assisted facile synthesis of yellow fluorescent carbon dots from o-phenylenediamine for cell imaging and sensitive detection of Fe3+ and H2O2. RSC Adv 2016. [DOI: 10.1039/c6ra02554d] [Citation(s) in RCA: 94] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
CDs synthesized from o-phenylenediamine through microwave-assisted method show great potential for Fe3+ and H2O2 detection as well as cell imaging.
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Affiliation(s)
- Li Song
- College of Materials Science and Opto-Electronic Technology
- University of Chinese Academy of Sciences
- Beijing
- China
| | - Yanyan Cui
- College of Materials Science and Opto-Electronic Technology
- University of Chinese Academy of Sciences
- Beijing
- China
| | - Chunfang Zhang
- College of Materials Science and Opto-Electronic Technology
- University of Chinese Academy of Sciences
- Beijing
- China
| | - Zhongbo Hu
- College of Materials Science and Opto-Electronic Technology
- University of Chinese Academy of Sciences
- Beijing
- China
| | - Xiangfeng Liu
- College of Materials Science and Opto-Electronic Technology
- University of Chinese Academy of Sciences
- Beijing
- China
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Barnett CJ, Smith NA, Jones DR, Maffeis TGG, Cobley RJ. Effects of Vacuum Annealing on the Conduction Characteristics of ZnO Nanosheets. NANOSCALE RESEARCH LETTERS 2015; 10:368. [PMID: 26383543 PMCID: PMC4573738 DOI: 10.1186/s11671-015-1066-1] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/04/2015] [Accepted: 08/30/2015] [Indexed: 06/05/2023]
Abstract
ZnO nanosheets are a relatively new form of nanostructure and have demonstrated potential as gas-sensing devices and dye sensitised solar cells. For integration into other devices, and when used as gas sensors, the nanosheets are often heated. Here we study the effect of vacuum annealing on the electrical transport properties of ZnO nanosheets in order to understand the role of heating in device fabrication. A low cost, mass production method has been used for synthesis and characterisation is achieved using scanning electron microscopy (SEM), photoluminescence (PL), auger electron spectroscopy (AES) and nanoscale two-point probe. Before annealing, the measured nanosheet resistance displayed a non-linear increase with probe separation, attributed to surface contamination. Annealing to 300 °C removed this contamination giving a resistance drop, linear probe spacing dependence, increased grain size and a reduction in the number of n-type defects. Further annealing to 500 °C caused the n-type defect concentration to reduce further with a corresponding increase in nanosheet resistance not compensated by any further sintering. At 700 °C, the nanosheets partially disintegrated and the resistance increased and became less linear with probe separation. These effects need to be taken into account when using ZnO nanosheets in devices that require an annealing stage during fabrication or heating during use.
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Affiliation(s)
- Chris J Barnett
- Multidisciplinary Nanotechnology Centre, College of Engineering, Swansea University, Singleton Park, Swansea, SA2 8PP, UK.
| | - Nathan A Smith
- Department of Physics, College of Science, Swansea University, Singleton Park, Swansea, SA2 8PP, UK.
| | - Daniel R Jones
- Multidisciplinary Nanotechnology Centre, College of Engineering, Swansea University, Singleton Park, Swansea, SA2 8PP, UK.
| | - Thierry G G Maffeis
- Multidisciplinary Nanotechnology Centre, College of Engineering, Swansea University, Singleton Park, Swansea, SA2 8PP, UK.
| | - Richard J Cobley
- Multidisciplinary Nanotechnology Centre, College of Engineering, Swansea University, Singleton Park, Swansea, SA2 8PP, UK.
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