Effects of Vacuum Annealing on the Conduction Characteristics of ZnO Nanosheets

Electric Field Manipulation of Defects and Schottky Barrier Control inside ZnO Nanowires

We directly measure the three-dimensional movement of intrinsic point defects driven by applied electric fields inside ZnO nano- and micro-wire metal-semiconductor-metal device structures. Using depth- and spatially resolved cathodoluminescence spectroscopy (CLS) in situ to map the spatial distributions of local defect densities with increasing applied bias, we drive the reversible conversion of metal-ZnO contacts from rectifying to Ohmic and back. These results demonstrate how defect movements systematically determine Ohmic and Schottky barriers to ZnO nano- and microwires and how they can account for the widely reported instability in nanowire transport. Exceeding a characteristic threshold voltage, in situ CLS reveals a current-induced thermal runaway that drives the radial diffusion of defects toward the nanowire free surface, causing V_O defects to accumulate at the metal-semiconductor interfaces. In situ post- vs pre-breakdown CLS reveal micrometer-scale wire asperities, which X-ray photoelectron spectroscopy (XPS) finds to have highly oxygen-deficient surface layers that can be attributed to the migration of preexisting V_O species. These findings show the importance of in-operando intrinsic point-defect migration during nanoscale electric field measurements in general. This work also demonstrates a novel method for ZnO nanowire refinement and processing.

Investigation into the effects of surface stripping ZnO nanosheets

ZnO nanosheets are polycrystalline nanostructures that are used in devices including solar cells and gas sensors. However, for efficient and reproducible device operation and contact behaviour the conductivity characteristics must be controlled and surface contaminants removed. Here we use low doses of argon bombardment to remove surface contamination and make reproducible lower resistance contacts. Higher doses strip the surface of the nanosheets altering the contact type from near-ohmic to rectifying by removing the donor-type defects, which photoluminescence shows to be concentrated in the near-surface. Controlled doses of argon treatments allow nanosheets to be customised for device formation.

Spatial and Contamination-Dependent Electrical Properties of Carbon Nanotubes

Two-point probe and Raman spectroscopy have been used to investigate the effects of vacuum annealing and argon bombardment on the conduction characteristics of multiwalled carbon nanotubes (MWCNTs). Surface contamination has a large effect on the two-point probe conductivity measurements which results in inconsistent and nonreproducible contacts. The electric field under the contacts is enhanced which results in overlapping depletion regions when probe separations are small (<4 μm) causing very high resistances. Annealing at 200 and 500 °C reduced the surface contamination on the MWCNT, but high resistance contacts still did not allow intrinsic conductivity measurements of the MWCNT. The high resistance measured due to the overlapping depletion regions was not observed after annealing to 500 °C. Argon bombardment reduced the surface contamination more than vacuum annealing at 500 °C but caused a slight increase in the defects concentration, enabling the resistivity of the MWCNT to be calculated, which is found to be dependent on the CNT diameter. The observations have significant implications for future CNT-based devices.

Simple but Effective Way To Enhance Photoelectrochemical Solar-Water-Splitting Performance of ZnO Nanorod Arrays: Charge-Trapping Zn(OH)2 Annihilation and Oxygen Vacancy Generation by Vacuum Annealing

This study presents an effective and the simplest method to substantially improve the photoelectrochemical water-splitting ability of hydrothermally grown ZnO nanorod arrays (NRAs). In the hydrothermal growth of ZnO NRAs, unwanted Zn(OH)₂ species are formed, which act as trapping sites of photoexcited charges. We found that those inherent charge-trapping sites could be annihilated by the desorption of the hydroxyl groups upon vacuum annealing above 200 °C, which resulted in an enhancement of the charge-separation efficiency and photocurrent density. Another drastic increase in the photocurrent density occurred when ZnO NRAs were treated with annealing at higher temperature (700 °C), which can be attributed to the introduced oxygen vacancies acting as shallow donors in the ZnO crystal lattice. The removal of the charge-trapping Zn(OH)₂ and the generation of oxygen vacancies were confirmed by photoluminescence (PL) and XPS analyses. The ZnO NRAs treated by this simple method yield a photocurrent density of 600 μA/cm² at 1.23 V_RHE under 1 sun illumination, which is 20 times higher than that obtained from as-grown ZnO NRAs. This study presents a highly efficient way of increasing the bulk electric conductivity and photoelectrochemical activity of metal oxide nanorods without requiring the introduction of any extrinsic dopants.