1
|
Dimitriev O, Slominskii Y, Giancaspro M, Rizzi F, Depalo N, Fanizza E, Yoshida T. Assembling Near-Infrared Dye on the Surface of Near-Infrared Silica-Coated Copper Sulphide Plasmonic Nanoparticles. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:510. [PMID: 36770471 PMCID: PMC9919055 DOI: 10.3390/nano13030510] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/28/2022] [Revised: 01/23/2023] [Accepted: 01/26/2023] [Indexed: 06/18/2023]
Abstract
Functionalization of colloidal nanoparticles with organic dyes, which absorb photons in complementary spectral ranges, brings a synergistic effect for harvesting additional light energy. Here, we show functionalization of near-infrared (NIR) plasmonic nanoparticles (NPs) of bare and amino-group functionalized mesoporous silica-coated copper sulphide (Cu2-xS@MSS and Cu2-xS@MSS-NH2) with specific tricarbocyanine NIR dye possessing sulfonate end groups. The role of specific surface chemistry in dye assembling on the surface of NPs is demonstrated, depending on the organic polar liquids or water used as a dispersant solvent. It is shown that dye binding to the NP surfaces occurs with different efficiency, but mostly in the monomer form in polar organic solvents. Conversely, the aqueous medium leads to different scenarios according to the NP surface chemistry. Predominant formation of the disordered dye monomers occurs on the bare surface of mesoporous silica shell (MSS), whereas the amino-group functionalized MSS accepts dye predominantly in the form of dimers. It is found that the dye-NP interaction overcomes the dye-dye interaction, leading to disruption of dye J-aggregates in the presence of the NPs. The different organization of the dye molecules on the surface of silica-coated copper sulphide NPs provides tuning of their specific functional properties, such as hot-band absorption and photoluminescence.
Collapse
Affiliation(s)
- Oleg Dimitriev
- V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, pr. Nauki 41, 03028 Kyiv, Ukraine
- Graduate School of Organic Materials Science, Yamagata University, Jonan 4-3-16, Yonezawa 992-8510, Japan
| | - Yuri Slominskii
- Institute of Organic Chemistry NAS of Ukraine, 5 Murmanska Str., 02660 Kyiv, Ukraine
| | - Mariangela Giancaspro
- Chemistry Department, University of Bari, via Orabona 4, 70125 Bari, Italy
- CNR-Institute for Chemical and Physical Process, SS Bari, via Orabona 4, 70125 Bari, Italy
| | - Federica Rizzi
- Chemistry Department, University of Bari, via Orabona 4, 70125 Bari, Italy
- CNR-Institute for Chemical and Physical Process, SS Bari, via Orabona 4, 70125 Bari, Italy
| | - Nicoletta Depalo
- CNR-Institute for Chemical and Physical Process, SS Bari, via Orabona 4, 70125 Bari, Italy
| | - Elisabetta Fanizza
- Chemistry Department, University of Bari, via Orabona 4, 70125 Bari, Italy
- CNR-Institute for Chemical and Physical Process, SS Bari, via Orabona 4, 70125 Bari, Italy
| | - Tsukasa Yoshida
- Graduate School of Organic Materials Science, Yamagata University, Jonan 4-3-16, Yonezawa 992-8510, Japan
| |
Collapse
|
2
|
Dhanabalan SC, Dhanabalan B, Chen X, Ponraj JS, Zhang H. Hybrid carbon nanostructured fibers: stepping stone for intelligent textile-based electronics. NANOSCALE 2019; 11:3046-3101. [PMID: 30720829 DOI: 10.1039/c8nr07554a] [Citation(s) in RCA: 23] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
The journey of smart textile-based wearable technologies first started with the attachment of sensors to fabrics, followed by embedding sensors in apparels. Presently, garments themselves can be transformed into sensors, which demonstrates the tremendous growth in the field of smart textiles. Wearable applications demand flexible materials that can withstand deformation for their practical use on par with conventional textiles. To address this, we explore the potential reasons for the enhanced performance of wearable devices realized from the fabrication of carbon nanostructured fibers with the use of graphene, carbon nanotubes and other two-dimensional materials. This review presents a brief introduction on the fabrication strategies to form carbon-based fibers and the relationship between their properties and characteristics of the resulting materials. The likely mechanisms of fiber-based electronic and storage devices, focusing mainly on transistors, nano-generators, solar cells, supercapacitors, batteries, sensors and therapeutic devices are also presented. Finally, the future perspectives of this research field of flexible and wearable electronics are discussed. The present study supplements novel ideas not only for beginners aiming to work in this booming area, but also for researchers actively engaged in the field of fiber-based electronics, dealing with advanced electronics and wide range of functionalities integrated into textile fibers.
Collapse
Affiliation(s)
- Sathish Chander Dhanabalan
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China.
| | | | | | | | | |
Collapse
|
3
|
Xia W, Dai L, Yu P, Tong X, Song W, Zhang G, Wang Z. Recent progress in van der Waals heterojunctions. NANOSCALE 2017; 9:4324-4365. [PMID: 28317972 DOI: 10.1039/c7nr00844a] [Citation(s) in RCA: 66] [Impact Index Per Article: 9.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Following the development of many novel two-dimensional (2D) materials, investigations of van der Waals heterojunctions (vdWHs) have attracted significant attention due to their excellent properties such as smooth heterointerface, highly gate-tunable bandgap, and ultrafast carrier transport. Benefits from the atom-scale thickness, physical and chemical properties and ease of manipulation of the heterojunctions formulated by weak vdW forces were demonstrated to indicate their outstanding potential in electronic and optoelectronic applications, including photodetection and energy harvesting, and the possibility of integrating them with the existing semiconductor technology for the next-generation electronic and sensing devices. In this review, we summarized the recent developments of vdWHs and emphasized their applications. Basically, we introduced the physical properties and some newly discovered phenomena in vdWHs. Then, we emphatically presented four classical vdWHs and some novel heterostructures formed by vdW forces. Based on their unique physical properties and structures, we highlighted the applications of vdWHs including in photodiodes, phototransistors, tunneling devices, and memory devices. Finally, we provided a conclusion on the recent advances in vdWHs and outlined our perspectives. We aim for this review to serve as a solid foundation in this field and to pave the way for future research on vdW-based materials and their heterostructures.
Collapse
Affiliation(s)
- Wanshun Xia
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China. and Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
| | - Liping Dai
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China.
| | - Peng Yu
- Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
| | - Xin Tong
- Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
| | - Wenping Song
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China.
| | - Guojun Zhang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China.
| | - Zhiming Wang
- Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
| |
Collapse
|
4
|
Ma L, Liu W, Cai H, Zhang F, Wu X. Catalyst- and template-free low-temperature in situ growth of n-type CdS nanowire on p-type CdTe film and p-n heterojunction properties. Sci Rep 2016; 6:38858. [PMID: 27958306 PMCID: PMC5221564 DOI: 10.1038/srep38858] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/17/2016] [Accepted: 11/15/2016] [Indexed: 11/17/2022] Open
Abstract
CdS is an important semiconductor used in optoelectronic devices. Simple techniques for growing CdS nanostructures are thus essential at a low cost. This study presents a novel method for growing single-crystal n-type CdS nanowires on p-type CdTe films by thermal annealing in an H2S/N2 mixed gas flow, which does not require the help of a catalyst or template. The formation process and growth mechanism of the nanowires are investigated. Well-dispersed whiskerlike CdS nanostructures are obtained at an appropriate annealing temperature and duration. We suggest that the stress-driving mechanism of nanowire formation may contribute to the growth of CdS nanowires, and that the evaporation of Te through the boundaries of the CdS grain seeds plays an important role in the sustainable growth of nanowire. In addition, CdS/CdTe heterojunction device is fabricated on Mo glass. The I-V characteristic of the heterojunction in dark shows typical rectifying diode behavior. The turn-on voltage can be regulated by annealing conditions. Meanwhile, the obvious photovoltaic effect is obtained on the in situ growth heterojunction prepared at low annealing temperature. Hence, this is a new fabricated method for CdTe-based materials in the field of energy conversion.
Collapse
Affiliation(s)
- Ligang Ma
- Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nano Technology, School of Physics, Nanjing University, Nanjing, 210093, China.,School of Electronic Engineering, Nanjing Xiaozhuang University, Nanjing, 211171, China
| | - Wenchao Liu
- Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nano Technology, School of Physics, Nanjing University, Nanjing, 210093, China
| | - Hongling Cai
- Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nano Technology, School of Physics, Nanjing University, Nanjing, 210093, China
| | - Fengming Zhang
- Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nano Technology, School of Physics, Nanjing University, Nanjing, 210093, China
| | - Xiaoshan Wu
- Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nano Technology, School of Physics, Nanjing University, Nanjing, 210093, China
| |
Collapse
|