Cui H, Chen D, Yan C, Zhang Y, Zhang X. Repairing the N-vacancy in an InN monolayer using NO molecules: a first-principles study.
NANOSCALE ADVANCES 2019;
1:2003-2008. [PMID:
36134219 PMCID:
PMC9417337 DOI:
10.1039/c9na00041k]
[Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/23/2019] [Accepted: 03/27/2019] [Indexed: 06/11/2023]
Abstract
The synthesis of a perfect InN monolayer is important to achieve desirable properties for the further investigation and application of InN monolayers. However, the inevitably existing defects, such as an N-vacancy, in the synthesized InN nanomaterials would significantly impair their geometric and electronic behaviors. In this study, we proposed to repair the N-vacancy in the InN monolayer using NO molecules through NO disproportionation, which was verified to be energetically favorable according to our first-principles calculations. The repaired InN monolayer was similar to the perfect counterpart in terms of the geometric and electronic aspects. In this study, a promising strategy is presented for repairing the N-vacancy in the InN monolayer to perfect its physicochemical properties effectively, which may also be used to repair N-vacancies in other materials.
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