Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates

Repairing the N-vacancy in an InN monolayer using NO molecules: a first-principles study

The synthesis of a perfect InN monolayer is important to achieve desirable properties for the further investigation and application of InN monolayers. However, the inevitably existing defects, such as an N-vacancy, in the synthesized InN nanomaterials would significantly impair their geometric and electronic behaviors. In this study, we proposed to repair the N-vacancy in the InN monolayer using NO molecules through NO disproportionation, which was verified to be energetically favorable according to our first-principles calculations. The repaired InN monolayer was similar to the perfect counterpart in terms of the geometric and electronic aspects. In this study, a promising strategy is presented for repairing the N-vacancy in the InN monolayer to perfect its physicochemical properties effectively, which may also be used to repair N-vacancies in other materials.

Selective growth of ordered hexagonal InN nanorods

Well-ordered and vertically aligned InN nanorods with high aspect ratios are synthesized by hydride vapor phase epitaxy (HVPE) using the selective area growth (SAG) approach.

Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates

InN nanocolumn arrays were grown on c-plane sapphire with and without anodic aluminum oxide (AAO) nanotemplates. The crystalline quality of InN nanocolumns was significantly improved by selective-area growth (SAG) using AAO templates, as verified by X-ray diffraction measurements. Then, InN nanocolumns were transferred onto p-type silicon substrates after etching off the AAO templates. Current-voltage characteristic of the transferred n-InN/p-Si heterojunctions shows on/off ratio as high as 4.65 × 10³ at 2 V. This work offers a potential way to grow transferable devices with improving performances.

Morphology Controlled Fabrication of InN Nanowires on Brass Substrates

Growth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. It was found that Zn from the brass substrates is the key factor in the formation of nanowires by restricting the lateral growth of InN. The nanowire morphology is highly dependent on the growth temperature. While at a lower growth temperature, the nanowires and the In droplets have large diameters. At the elevated growth temperature, the lateral sizes of the nanowires and the In droplets are much smaller. Moreover, the nanowire diameter can be controlled in situ by varying the temperature in the growth process. This method is very instructive to the diameter-controlled growth of nanowires of other materials.