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Abdulrahman AF, Abd-Alghafour N, Ahmed SM. Optimization and characterization of SILAR synthesized ZnO nanorods for UV photodetector sensor. SENSORS AND ACTUATORS A: PHYSICAL 2021; 323:112656. [DOI: 10.1016/j.sna.2021.112656] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/02/2023]
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Fei X, Jiang D, Zhao M, Deng R. Improved responsivity of MgZnO film ultraviolet photodetectors modified with vertical arrays ZnO nanowires by light trapping effect. NANOTECHNOLOGY 2021; 32:205401. [PMID: 33556931 DOI: 10.1088/1361-6528/abe43b] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The light trapping effect of ZnO nanowires (NWs) is attracting increasing attention as it effectively enhances the photoelectric effect. In this paper, high-density ZnO NWs are grown on a metal-semiconductor-metal structure MgZnO film UV photodetector (PD) as a light trapping unit. The photogenerated carriers diffuse along the longitudinal axis of the ZnO NWs, then diffuse onto the thin film and are collected by an applied bias electrode. When the device is connected to the NWs, the responsivity is about 12 times higher than that of the pure MgZnO film UV PD with a large light-dark current ratio (4.93 × 104). The array structure of the ZnO NWs enhances the number of photogenerated carriers at the top interface and provides a longer optical path length and a larger surface area. The resulting light trapping effect endows the device with excellent photoelectric properties. In this work, the introduction of NWs not only fundamentally improves the performance of the MgZnO thin film UV PD, but the resulting photodetector also demonstrates a sharp contrast between light trapping UV PD and the MgZnO thin film UV PD.
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Affiliation(s)
- Xiaomiao Fei
- School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, People's Republic of China
| | - Dayong Jiang
- School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, People's Republic of China
- Engineering Research Center of Optoelectronic Functional Materials, Ministry of Education, Changchun 130022, People's Republic of China
| | - Man Zhao
- School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, People's Republic of China
| | - Rui Deng
- School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, People's Republic of China
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Helil Z, Abdiryim T, Jamal R, Kadir A, Che Y, Zou D, Niyaz M. Electrochemical synthesis of hydroxyl group-functionalized PProDOT/ZnO for an ultraviolet photodetector. RSC Adv 2021; 11:15825-15834. [PMID: 35481183 PMCID: PMC9029230 DOI: 10.1039/d1ra01962g] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/12/2021] [Accepted: 04/20/2021] [Indexed: 11/21/2022] Open
Abstract
Ultraviolet (UV) detectors based on zinc oxide (ZnO) nanorods (NRs) are ideal materials for UV radiation detection. However, owing to the surface effect of ZnO NRs, their speed of photoresponse and photosensitivity need to be improved. In this study, a UV photodetector was fabricated via electrochemical coating of poly(3,4-propylenedioxythiophene) grafted with functional groups (-OH) on a hydrothermally grown ZnO NRs. For comparison, poly(3,4-propylenedioxythiophene)/ZnO composites were synthesized using the same method. The structure of the composite film was characterized by Fourier transform infrared spectroscopy (FT-IR), UV-visible spectroscopy (UV-vis), X-ray diffraction (XRD), Raman spectroscopy (Raman), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDS). The effect of the polymer structure on the UV sensing ability of ZnO NRs was evaluated by fabricating a UV detector with a composite material. The structural results indicated that the PProDOT-type conductive polymer and ZnO composites were successfully synthesized. The UV photodetection results showed that the presence of functional groups (-OH) in polymer chains could enhance the responsivity of the material. The response time of the ZnO/PProDOT-OH composite was 15 s shorter than that of the ZnO/PProDOT composite. A rise in photocurrent induced an increase from 2.5 A W-1 to 34.75 A W-1 in the UV photoresponsivity of the ZnO/PProDOT-OH composite, compared with that of the pure ZnO NRs. The external quantum efficiency and detectivity significantly improved, the increases of which were attributed to the coupling of the polymer and ZnO NRs.
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Affiliation(s)
- Zulpikar Helil
- Key Laboratory of Energy Materials Chemistry, Ministry of Education, Key Laboratory of Advanced Functional Materials, Autonomous Region, Institute of Applied Chemistry, College of Chemistry, Xinjiang University Urumqi 830046 P. R. China
| | - Tursun Abdiryim
- Key Laboratory of Energy Materials Chemistry, Ministry of Education, Key Laboratory of Advanced Functional Materials, Autonomous Region, Institute of Applied Chemistry, College of Chemistry, Xinjiang University Urumqi 830046 P. R. China
| | - Ruxangul Jamal
- Key Laboratory of Oil and Gas Fine Chemicals, Ministry of Education, Xinjiang Uygur Autonomous Region, Xinjiang University Urumqi 830046 P. R. China
| | - Aygul Kadir
- Key Laboratory of Oil and Gas Fine Chemicals, Ministry of Education, Xinjiang Uygur Autonomous Region, Xinjiang University Urumqi 830046 P. R. China
| | - Yuzhu Che
- Key Laboratory of Energy Materials Chemistry, Ministry of Education, Key Laboratory of Advanced Functional Materials, Autonomous Region, Institute of Applied Chemistry, College of Chemistry, Xinjiang University Urumqi 830046 P. R. China
| | - Dongna Zou
- Key Laboratory of Energy Materials Chemistry, Ministry of Education, Key Laboratory of Advanced Functional Materials, Autonomous Region, Institute of Applied Chemistry, College of Chemistry, Xinjiang University Urumqi 830046 P. R. China
| | - Mariyam Niyaz
- Key Laboratory of Energy Materials Chemistry, Ministry of Education, Key Laboratory of Advanced Functional Materials, Autonomous Region, Institute of Applied Chemistry, College of Chemistry, Xinjiang University Urumqi 830046 P. R. China
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Abdulrahman AF, Ahmed SM, Barzinjy AA, Hamad SM, Ahmed NM, Almessiere MA. Fabrication and Characterization of High-Quality UV Photodetectors Based ZnO Nanorods Using Traditional and Modified Chemical Bath Deposition Methods. NANOMATERIALS 2021; 11:nano11030677. [PMID: 33803274 PMCID: PMC7999724 DOI: 10.3390/nano11030677] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/04/2021] [Revised: 02/22/2021] [Accepted: 03/04/2021] [Indexed: 01/31/2023]
Abstract
Ultraviolet (UV) photodetectors (PDs) based on high-quality well-aligned ZnO nanorods (NRs) were fabricated using both modified and conventional chemical bath deposition (CBD) methods. The modified chemical bath deposition (M-CBD) method was made by adding air bubbles to the growth solution during the CBD process. The viability and effectiveness of M-CBD were examined by developing UV PDs based on ZnO NRs. The ZnO nano-seed layer was coated on a glass substrate utilizing radiofrequency (RF) sputtering. The impact of the different growth-times on morphology, growth rate, crystal structure, and optical and chemical properties were investigated systematically using different characterization techniques, such as field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) analysis, UV–VIS double beam spectrometer, and energy dispersive X-ray analysis (EDX), respectively. The Al/ZnO UV PDs based on ZnO nanorods were fabricated with optimum growth conditions through the two methods of preparation. This study showed that the synthesized ZnO NRs using the M-CBD method for different growth times possess better properties than the conventional method under similar deposition conditions. Despite having the highest aspect ratio and growth rate of ZnO NRs, which were found at 4 h growth duration for both methods, the aspect ratio of ZnO NRs using the M-CBD technique was comparatively higher than the conventional CBD method. Besides, the UV PDs fabricated by the M-CBD method at 5 V bias voltage showed high sensitivity, short response time, quick recovery time, high gain, low dark current, and high photocurrent compared with the UV PD device fabricated by the conventional CBD method.
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Affiliation(s)
- Ahmed Fattah Abdulrahman
- Department of Physics, Faculty of Science, University of Zakho, Zakho 42002, Kurdistan Region, Iraq;
| | - Sabah Mohammed Ahmed
- Department of Physics, College of Science, University of Duhok, Duhok 42001, Kurdistan Region, Iraq;
| | - Azeez Abdullah Barzinjy
- Department of Physics, College of Education, Salahaddin University-Erbil, Erbil 44001, Kurdistan Region, Iraq
- Physics Education Department, Faculty of Education, Tishk International University, Erbil 44001, Kurdistan Region, Iraq
- Correspondence: ; Tel.: +964-750-454-2010
| | - Samir Mustafa Hamad
- Scientific Research Centre, Soran University, Soran 44008, Kurdistan Region, Iraq;
| | | | - Munirah Abullah Almessiere
- Department of Biophysics, Institute for Research and Medical Consultations (IRMC), Imam Abdulrahman Bin Faisal University, P.O. Box 1982, Dammam 31441, Saudi Arabia;
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Lee SH, Roh Y, Lee SH, Ryu YS, Ju BK, Seo M. Direct comparison with terahertz metamaterials and surface-enhanced Raman scattering in a molecular-specific sensing performance. OPTICS EXPRESS 2021; 29:12-23. [PMID: 33362096 DOI: 10.1364/oe.412474] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2020] [Accepted: 12/10/2020] [Indexed: 06/12/2023]
Abstract
Signal enhancement of spectroscopies including terahertz time-domain spectroscopy (THz-TDS) and surface-enhanced Raman scattering (SERS) is a critical issue for effective molecular detection and identification. In this study, the sensing performance between THz-TDS and SERS individually accompanied by the proper plasmonic subwavelength structures was compared. For the precisely quantitative study on the optical properties of rhodamine 6G (R6G) dyes, SERS incorporates with the non-linearly enhanced Raman emissions at the molecular characteristic peaks while THz-TDS refers to the transmittance change and the shift of the spectral resonance. The local molecular density-dependent trade-off relationship between limit-of-detection and quenching was observed from both measurements. The specificity for two samples, R6G and methylene blue, is determined by the discriminations in spectral features such as the intensity ratio of assigned peaks in SERS and transmittance difference in THz-TDS. The comprehension of field enhancement by the specific nanostructures was supported by the finite-element method-based numerical computations. As a result, both spectroscopic techniques with the well-tailored nanostructures show great potential for highly sensitive, reproducible, label-free, and cost-effective diagnosis tools in the biomedical fields.
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Wang N, Jiang D, Zhao M, Zhou X, Duan Y, Sun J, Shan C, Li Q, Li M, Fei X, Zhao X. Enlarged responsivity-ZnO honeycomb nanomaterials UV photodetectors with light trapping effect. NANOTECHNOLOGY 2019; 31:105706. [PMID: 31751987 DOI: 10.1088/1361-6528/ab5a23] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The ability of ZnO photodetectors to absorb UV light plays a key role in enhancing responsivity and performance in electronic, optical, and photonic devices. Herein, the light trapping effect of ZnO is used to design and fabricate a novel honeycomb-like ZnO nanomaterial-based UV photodetector with an excellent photoelectric performance. Compared with the traditional ZnO film UV photodetector, the photoresponsivity of the film with honeycomb nanomaterials can reach up to 4.79 A W-1, which is an improvement of about 300 times. In addition, the honeycomb ZnO nanomaterials UV photodetectors exhibit an improved light absorption, a very photo-to-dark current ratio (2.46 × 103), and an excellent detectivity (4.61 × 1012 Jones). The ZnO honeycomb nanostructure synthesized in this work exhibits a strong trapping effect, providing new insights into the research of nanomaterials used for UV photodetectors.
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Affiliation(s)
- Nan Wang
- School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, People's Republic of China. School of Engineering, Changchun Normal University, Changchun 130032, People's Republic of China
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Hwang JD, Jiang JY. Barrier thickness dependence of Mg x Zn 1-x O/ZnO quantum well (QW) on the performance of a p-NiO/QW/n-ZnO photodiode. RSC Adv 2019; 9:29967-29972. [PMID: 35531536 PMCID: PMC9072091 DOI: 10.1039/c9ra06131b] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/07/2019] [Accepted: 09/11/2019] [Indexed: 11/29/2022] Open
Abstract
An MgxZn1−xO/ZnO quantum well (QW) structure, with various barrier (MgxZn1−xO layer) thicknesses, was inserted into p-NiO/n-ZnO heterojunction photodiodes (HPDs) by using a radio-frequency magnetron sputtering system. The effect of various barrier thicknesses on the performance of QW-PDs was investigated. A band diagram shows that the QW-PD with 10 nm barrier layer presents a tunneling carrier transport mechanism, the UV- and visible-generated carriers tunnel through the thin barrier layer. Whereas the QW-PDs with thicker (≧25 nm) barrier layers show recombination-tunneling carrier transport. The visible-generated carriers are effectively confined within the well layer in the QW structure, causing the visible-response to be greatly reduced by more than 3 orders compared to that in the QW-PD with a 10 nm barrier layer. However, on further increasing the barrier thickness beyond 25 nm, the visible-response will no longer be reduced. In contrast, with decreasing the barrier thickness from 60 to 25 nm, the UV-response increases due to the overlap increase of the fundamental electron and hole wave function in the quantum well. Such a result drastically enhances the rejection ratio (320 nm/500 nm) from 264 for QW-PDs with a 10 nm barrier to 2986 for QW-PDs with a 25 nm barrier layer by a 11.3 ratio. An MgxZn1−xO/ZnO quantum well (QW) structure, with various barrier (MgxZn1−xO layer) thicknesses, was inserted into p-NiO/n-ZnO heterojunction photodiodes (HPDs) by using a radio-frequency magnetron sputtering system.![]()
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Affiliation(s)
- Jun Dar Hwang
- Department of Electrophysics, National Chiayi University No. 300 Syuefu Rd. Chiayi City 60004 Taiwan
| | - Jhong Yung Jiang
- Department of Electrophysics, National Chiayi University No. 300 Syuefu Rd. Chiayi City 60004 Taiwan
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Shan C, Zhao M, Jiang D, Li Q, Li M, Zhou X, Duan Y, Wang N, Deng R. Improved responsivity performance of ZnO film ultraviolet photodetectors by vertical arrays ZnO nanowires with light trapping effect. NANOTECHNOLOGY 2019; 30:305703. [PMID: 30861496 DOI: 10.1088/1361-6528/ab0ee5] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The light trapping effect of zinc oxide (ZnO) ultraviolet photodetectors (UV PDs) has been established as a promising way to optimize the performance of optoelectronic devices. In this paper, we report a light trapping fabricated metal-semiconductor-metal structure, consisting of a ZnO nanowire array as a top layer light absorber supported by a ZnO film. The ZnO film is bridged between two interdigitated metal electrodes for collecting photo-generated carriers. In this connection, high-dense ZnO nanowires can be used as a light trapping unit and to transmit the photogenerated carriers towards the ZnO film. The photogenerated carriers diffuse along the longitudinal direction of the ZnO nanowire and then to the ZnO film and are collected by the applied bias electrode. Compared to present ZnO thin film UV PDs, our device has an effective light trapping effect and the enhancement of photo-generated carriers at the top interface by a ZnO nanowire array structure are highly beneficial to UV light detection as they can provide a long optical path and more surface area. In addition, when the device was connected with nanowires, a 10 times augment of responsivity appeared accompanied by a giant photo-to-dark current ratio (1.6 × 103). This novel work not only enhanced fundamental improvement of nanowires to ZnO film UV PDs, but also provided a distinct contrast between light trapping UV PDs and ZnO film UV PDs.
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Affiliation(s)
- Chuncai Shan
- School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, People's Republic of China
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Cao F, Pan Z, Ji X. Enhanced photocatalytic activity of a pine-branch-like ternary CuO/CuS/ZnO heterostructure under visible light irradiation. NEW J CHEM 2019. [DOI: 10.1039/c9nj01785b] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/28/2023]
Abstract
A pine-branch-like ternary CuO/CuS/ZnO heterostructure exhibits enhanced visible light photocatalytic ability toward organic dyes.
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Affiliation(s)
- Fa Cao
- School of Materials Science and Engineering
- South China University of Technology
- Guangzhou 510641
- China
| | - Zhihu Pan
- School of Materials Science and Engineering
- South China University of Technology
- Guangzhou 510641
- China
| | - Xiaohong Ji
- School of Materials Science and Engineering
- South China University of Technology
- Guangzhou 510641
- China
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Jiang Y, Liu X, Cai F, Liu H. Direct Growth of Feather-Like ZnO Structures by a Facile Solution Technique for Photo-Detecting Application. NANOSCALE RESEARCH LETTERS 2017; 12:483. [PMID: 28798992 PMCID: PMC5552619 DOI: 10.1186/s11671-017-2252-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/30/2017] [Accepted: 07/26/2017] [Indexed: 06/07/2023]
Abstract
The feather-like hierarchical zinc oxide (ZnO) was synthesized via successive ionic layer adsorption and reaction without any seed layer or metal catalyst. A possible growth mechanism is proposed to explain the forming process of ZnO feather-like structures. Meanwhile, the photo-electronic performances of the feather-like ZnO have been investigated with the UV-vis-NIR spectroscopy, I-V and I-tmeasurements. The results indicate that feather-like ZnO hierarchical structures have good anti-reflection and excellent photo-sensitivity. All results suggest that the direct growth processing of novel feather-like ZnO is envisaged to have promising application in the field of photo-detector devices.
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Affiliation(s)
- Yurong Jiang
- Henan Key Laboratory of Photovoltaic Materials, College of Physics and Materials Science, Henan Normal University, Xinxiang, 453007, China.
| | - Xingbing Liu
- School of Computer and Information Engineering, Henan Normal University, Xinxiang, China
| | - Fangmin Cai
- Henan Key Laboratory of Photovoltaic Materials, College of Physics and Materials Science, Henan Normal University, Xinxiang, 453007, China
| | - Hairui Liu
- Henan Key Laboratory of Photovoltaic Materials, College of Physics and Materials Science, Henan Normal University, Xinxiang, 453007, China
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