High-Performance Self-powered Photodetectors Based on ZnO/ZnS Core-Shell Nanorod Arrays

Ternary ZnS/ZnO/Graphitic Carbon Nitride Heterojunction for Photocatalytic Hydrogen Production

Ternary ZnS/ZnO/graphitic carbon nitride (gCN) photocatalysts were prepared by coupling gCN sheets with ZnO nanorods under solvothermal conditions followed by sulfurization using Na2S. SEM and TEM analyses show that small-sized ZnS particles (ca. 7.2 nm) deposit homogeneously on the surface of ZnO/gCN nanohybrids. Photoluminescence and electrochemical impedance spectroscopy show that ZnS allows for an enhanced charge separation efficiency as well as prolonged lifetime of photogenerated charge carriers, leading to improved hydrogen photoproduction under UV light irradiation compared to ZnO/gCN. Moreover, the deposition of ZnS nanoparticles improves the photostability of the ZnS/ZnO/gCN catalyst for hydrogen production. A double Z-scheme mechanism is proposed for hydrogen photoproduction using the ZnS/ZnO/gCN heterojunction.

A Facile Synthesis of TiO2-α-Ga2O3-Based Self-Powered Broad-Band UVC/UVA Photodetector and Optical Communication Study

Traditional optical communication systems rely on single narrow-band PDs, which can expose confidential information and data to potential eavesdropping in free space. With advancements in technology, even optical communication in the UV spectrum, invisible to the sun, faces risks of interception. Consequently, broad-band PDs that combine optical encryption with algorithmic encryption hold significant promise for secure and reliable communication. This study presents a photodetector based on TiO2-α-Ga2O3 heterostructures, prepared via direct oxidation and hydrothermal reaction, demonstrating self-powered UVC/UVA broad-band detection capabilities. The PD exhibits response peaks at approximately 250 and 320 nm, with R of 42.16 and 59.88 mA/W and D* of 8.21 × 1013 and 9.56 × 1013 Jones, respectively. Leveraging the superior optical response characteristics of UVC and UVA wavelengths, this device has been employed to develop a communication system designed for data transmission. The proposed system features two independent channels: one for data transmission using UVC and another for key distribution using UVA. Secure communication is ensured through specialized encryption algorithms. In summary, this work offers a straightforward, cost-effective, and practical method for fabricating self-powered UVC/UVA broad-band PDs. This PD provides new insights into the development of multi-purpose, multi-band secure optical communication devices and holds promise for integration into multifunctional optoelectronic systems in the future.

Engineering GaN/AuNC core-shell nanowire heterojunctions by gold nanoclusters with excitation-dependent behavior for enhancing the responsivity and stability of self-driven photodetectors

Self-driven broadband photodetectors (PDs) with low-power consumption have great potential applications in the wide range of next-generation optoelectronic devices. In this study, a self-driven broadband PD responding to an ultraviolet-visible range based on gallium nitride/gold nanocluster (GaN/AuNC) core-shell nanowire heterojunctions is fabricated for the first time. By introducing the AuNCs onto the GaN nanowire surfaces, the GaN/AuNC core-shell nanowire heterojunctions can be formed efficiently. It is crucial that AuNCs have the functions of light collectors and hole conductors in heterojunctions due to the suitable energy level alignment. Under the optimized conditions of AuNCs, it is found that GaN/AuNC core-shell nanowires can significantly increase the photocurrent and responsivity of PDs, mainly resulting from the light interreflection within the heterojunctions and the effective improvement of carrier transport. Owing to the excitation-dependent emission behavior of AuNCs, the responsivity of PD with GaN/AuNC core-shell nanowire heterojunctions can be enhanced by around 330% compared with that of PD without AuNCs under visible illumination. Furthermore, GaN/AuNC hybrid nanowires with excitation-dependent fluorescence behavior can modulate the enhanced amplitude performance of broadband PDs. Owing to the high stability of AuNCs, the photocurrent of the PD with AuNCs is still quite stable after continuous operation for more than 20 000 s. Therefore, this study provides an effective method for developing new broadband PDs with high performance and low energy consumption.

Self-powered (In,Ga)N-nanowire-based photodetector with fast response speed for under-seawater detection

Due to the requirements of oceanography exploration and detection, self-powered photodetectors (PDs) with low-power consumption are essential for the next-generation optoelectronic applications. In this work, we successfully demonstrate a self-powered photoelectrochemical (PEC) PD in seawater based on the (In,Ga)N/GaN core-shell heterojunction nanowires. Compared to those of the PD in pure water, it is found that the upward and downward overshooting features of current can be the key reason contributing to the much faster response speed of the PD in seawater. Thanks to the enhanced response speed, the rise time of PD can be reduced more than 80%, and the fall time remains only 30% by applying in seawater instead of pure water. The key factors of generating these overshooting features should be the instantaneous temperature gradient, carrier accumulation and elimination on the semiconductor/electrolyte interfaces at the moments of light on and off. By the analysis of experimental results, the Na⁺ and Cl^- ions are proposed to be the main factors affecting the PD behavior in seawater, which can enhance the conductivity and accelerate the oxidation-reduction reaction significantly. This work paves an effective way to develop the new self-powered PDs for the wide applications in under-seawater detection and communication.

Photocatalytic degradation of naproxen using single-doped TiO2/FTO and co-doped TiO2-VO2/FTO thin films synthesized by sonochemistry

Single-doped TiO2/FTO and co-doped TiO2-VO2/FTO thin films were prepared by sonochemistry and spray pyrolysis deposition on FTO substrates. The co-deposition of TiO2-VO2 on FTO significantly changed the morphological, structural, optical, and photocatalytical properties compared to the single-deposition. X-ray diffraction and HRTEM results showed polycrystalline film structures composed of SnO2-tetragonal from FTO, anatase-TiO2, rutile-TiO2, and monoclinic-VO2 phases. The co-deposition technique increases the particle size distribution by approximately two times compared to simple deposition. The single-doped TiO2/FTO thin film had a 15% higher bandgap than the co-doped TiO2-VO2/FTO thin film, and the electrical resistivity calculated from the van der Pauw method was 55.3 MΩ sq−1 for the TiO2-VO2/FTO co-doped thin film, 2.7 times lower than that obtained for the TiO2/FTO thin film. Single-doped TiO2/FTO and co-doped TiO2-VO2/FTO thin films presented pseudo-first-order reactions at pH 6.5, with kinetic constants of 0.026 and 0.015 min−1, respectively. This behavior is related to the production of inactive or less active aggregates by the addition of vanadium during the co-doping process, which led to lattice contraction, which encouraged the formation of the rutile phase rather than the anatase phase. However, the co-doped thin film can modify the metal-insulator transition compared to the single-doped TiO2/FTO thin film. Furthermore, co-deposition decreased the bandgap value by 16% compared to single-deposition thin film. In this sense, co-doped TiO2-VO2/FTO thin films inhibited the recombination of photogenerated carriers and the formation of reactive oxygen species involved in the photocatalytic degradation of naproxen.

Understanding of mobility limiting factors in solution grown Al doped ZnO thin film and its low temperature remedy

The solution grown doped ZnO based transparent electrode has shown great potential in future generation flexible and smart devices due to its abundance in earth, low cost, simple and low temperature synthesis process. But solution grown doped ZnO possesses one major drawback, its mobility decreases rapidly with an increase in doping concentration. To eliminate this issue, the understanding of factors that limiting mobility is a prerequisite. But till date, there are very limited resources with detailed understanding of mobility limiting factors in solution grown TCO. Here in this report, with the morphological, optical and electrical investigations, the mobility limiting factor comes out to be surface related property and assigned to be the defects related to surface adsorbed oxygen and oxygen species at the surface. Furthermore, we have modified the surface to remove the surface adsorbed oxygen species by a low temperature (70 °C) simple solution process. Surface modified sample shows more than two orders of improvement in resistivity without any significant change in the transparency in visible range.

Self-powered photodetectors with a position-controlled array based on ZnO nanoclusters

A self-powered ultraviolet (UV) photodetector (PD) with a position-controlled array based on zinc oxide (ZnO) nanoclusters (NCs) has been proposed. The structure of the special array makes it possible to reduce the light loss and improve the light trap. The PD innovatively modifies the structure of ZnO PDs, which is distinguished from other traditional devices. The results demonstrate that the ZnO NC array can spontaneously generate the carrier and successfully achieve the detection at zero bias under the radiation of UV light. In this study, the structure is fabricated with two different substrates of silicon (Si) and GaN. At zero bias voltage, the Si-based PD under 365 nm shows the responsivity and external quantum efficiency (EQE) reaching up to 14.1 mA/W and 4.79%, respectively, and the responsivity of the GaN-based detector can be obtained up to 59.9 mA/W; its parameter of EQE is 20.04%, the photocurrent is 10^-5A, and the on/off ratio is 174. Our findings indicate that this structure of the device has potential for applications that require detection of light.

Fast-Response Metal-Semiconductor-Metal Junction Ultraviolet Photodetector Based on ZnS:Mn Nanorod Networks via a Cost-Effective Method

In this work, Mn2+-doped ZnS nanorods were synthesized by a facile hydrothermal method. The morphology, structure, and composition of the as-prepared samples were investigated. The temperature-dependent photoluminescence of ZnS:Mn nanorods was analyzed, and the corresponding activation energies were calculated by using a simple two-step rate equation. Mn2+-related orange emission (4T1 → 6A1) demonstrates high stability and is comparatively less affected by the temperature variations than the defect-related emission. A metal-semiconductor-metal junction ultraviolet photodetector based on the nanorod networks has been fabricated by a cost-effective method. The device exhibits visible blindness, superior ultraviolet photodetection with a responsivity of 1.62 A/W, and significantly fast photodetection response with the rise and decay times of 12 and 25 ms, respectively.

Full near-ultraviolet response photoelectrochemical ultraviolet detector based on TiO2nanocrystalline coated stainless steel mesh photoanode

In order to solve the 'ultraviolet (UV) filtering problem' caused by traditional sandwich-type structure in photoelectrochemical (PEC) UV detector, we design a special electrode based on stainless steel mesh, which integrates the light absorption layer and the electron collection electrode in a simple way. In combination with an UV-transparent quartz substrate, UV light can directly reach the active material. The improved detector shows good visible-blind, self-powered, and linear response characteristics. The serious recombination caused by metal electrode is suppressed by depositing a barrier layer. The optimized device exhibits a high photoresponse of 0.103 A W^-1at 296 nm, a short recovery time of 250 ms, and very sensitive switching ability. Furthermore, the response range of the detector is expanded from 300 to 400 nm to the full near-UV region. Our work provides an efficient strategy to solve the key problem of the PEC UV detector.

Enhanced performance of ZnO nanorod array/CuSCN ultraviolet photodetectors with functionalized graphene layers

Facile, convenient and low-cost processes, including a chemical hydrothermal method and impregnation technique, were demonstrated to fabricate a self-powered ZnO nanorod array/CuSCN/reduced graphene oxide (rGO) ultraviolet photodetector. ZnO nanorods (NRs) were fully filled and encased by the CuSCN layer, in which CuSCN acts as the primary hole-transport layer and an electron reflection layer, blocking the electron transfer towards the Au electrode and reducing the electron-hole pair recombination. After annealing, this encapsulated structure further reduces the surface state defects of ZnO NRs, which can isolate the electron exchange with oxygen in the air, dramatically reducing the rise and fall time; it also forms a p-n junction, providing a built-in electric field to improve the photoresponse without applying external power. The rGO layer was coated on the surface of CuSCN as the secondary hole-transport layer and then annealed, which could effectively block Au from entering CuSCN and contacting ZnO along cracks and holes during vapor deposition, avoiding the formation of leakage channels. Furthermore, due to the ultra-high carrier mobility and the increase in work function after Au doping, the functionalized graphene could reduce the valence band shift, which is beneficial to enhance hole transport. Meanwhile, rGO obstructs the undesired barrier formed by electrical potential-induced reaction of Au with thiocyanate anions. Finally, the ZnO NR/CuSCN/rGO ultraviolet photodetector exhibits a significant enhancement in device performance (responsivity: 18.65 mA W-1 at 375 nm under 65 mW cm-2 illumination, rectification ratio: 5690 at ±1 V), which is better that of than ZnO NR/CuSCN structure (10.88 mA W-1, 10.22 at ±1 V) and maintains the 100 ms response time.

Enhanced Optical Absorption and Interfacial Carrier Separation of CsPbBr3/Graphene Heterostructure: Experimental and Theoretical Insights

Controlling effective separation of carriers at the interface is a key element to realize highly efficient halogenated perovskite-based optoelectronic devices. Here, a comprehensive study of interfacial properties for CsPbBr₃ nanocrystals (NCs)/graphene heterostructure is performed by the combination of theoretical and experimental methods. Enhanced visible light absorption is observed experimentally in the CsPbBr₃ NCs/graphene heterostructure. The strong photoluminescence quenching phenomenon and improved photoresponse prove the efficient interfacial charge transfer from the perovskite CsPbBr₃ NC layer to the graphene side. Significantly, theoretical calculations suggest that an intrinsic built-in electric field, pointing from graphene toward CsPbBr₃, promotes the separation of photoinduced carriers at the CsPbBr₃ NCs/graphene interface and simultaneously inhibits the recombination of electron-hole pairs. Thus, the high optoelectronic performance can be obtained in the CsPbBr₃ NCs/graphene heterostructure, as shown in our experiment. Moreover, the CsPbBr₃ NCs/graphene heterostructure exhibits smaller effective mass than that of CsPbBr₃ NCs, indicating that the heterostructure does possess a high carrier mobility, which can further accelerate the separation of photogenerated carriers. Furthermore, the calculated results reveal that, accounting for the presence of the stronger built-in electric field, larger band bending value, and smaller effective mass, the PbBr₂/graphene interface can realize the separation of the photoinduced carriers more effectively than the CsBr/graphene interface and thus more efficiently facilitate electron transfer from the perovskite optical absorber side to the graphene electronic transport side. Our findings provide valuable insight into perovskite/graphene-based photodetector devices via the interface engineering project.

Plasmonic Ag nanoparticles arbitrated enhanced photodetection in p-NiO/n-rGO heterojunction for future self-powered UV photodetectors

We report on the low cost and low temperature chemical synthesis of p-type nickel oxide (NiO) and n-type reduced graphene oxide (rGO) and their integration onto ITO/glass substrate to form p-NiO/n-rGO heterojunction for possible self-powered ultraviolet (UV) photodetector applications. Different spectroscopies and microscopes were employed to study their microstructural and surface properties. Whereas, the electrical characterizations have been performed on the devices to ascertain the responsivity, detectivity, external quantum efficiency and temporal responses under dark and UV illumination. It is noteworthy that rGO has not only been used as an n-type semiconductor, but also acted as an electron transport layer, which satisfactorily separates out the electrons from the generated carrier pairs, leading to enhanced photoresponse. Furthermore, efforts were also consecrated to synthesize Ag nanoparticles (NPs) of ∼5 nm radius. The integration of Ag NPs on the conventional NiO/rGO heterojunction facilitates an improved UV light absorption property. It was understood that the performance improvement was owed to the local surface plasmon resonance of Ag NPs within the active layer of NiO. Surprisingly, both the devices (with and without Ag NPs) exhibit photovoltaic behavior which shows its potential for self-powered device application. When the Ag NPs embedded device is concerned, it showed better on/off ratio (6.3 × 10³), high responsivity (72 mAW^-1), large detectivity (3.95 × 10¹² Jones), and high efficiency (24.46%) as compared to the conventional NiO/rGO heterojunction one (without Ag NPs). The variation in the photoresponse and improved charge transport was explained through a band-diagram, which also showcases a comprehensive understanding on the operational principle of the fabricated self-powered devices. Thus, this self-powered photodetector driven by built in electric field is operated independently and can be attached with any other electronic gadgets for internet of things applications.

Fabrication and characterization of distinctive ZnO/ZnS core-shell structures on silicon substrates via a hydrothermal method

A distinctive novel ZnO/ZnS core-shell structure on silicon was reported in this study. Compared with previous studies, ZnO nanorods encapsulated by 5 nm ZnS nanograins were observed using a scanning electron microscope. Furthermore, strong (111) cubic ZnS crystalline structures were confirmed using high resolution transmission electron microscopy, selected area diffraction, and X-ray diffraction. The optical properties changed and the antibacterial behaviors were suppressed as the ZnS shells were attached onto the ZnO nanorods. Moreover, the results also indicate that the hydrophobicity could be enhanced as more ZnS nanograins were wrapped onto the ZnO nanorods. The ZnO/ZnS core-shell structures in this research show promise for use in future optoelectronic and biomedical applications.

High-Performance Self-Powered UV Detector Based on SnO2-TiO2 Nanomace Arrays

Photoelectrochemical cell-typed self-powered UV detectors have attracted intensive research interest due to their low cost, simple fabrication process, and fast response. In this paper, SnO₂-TiO₂ nanomace arrays composed of SnO₂ nanotube trunk and TiO₂ nanobranches were prepared using soft chemical methods, and an environment-friendly self-powered UV photodetector using this nanostructure as the photoanode was assembled. Due to the synergistic effect of greatly accelerated electron-hole separation, enhanced surface area, and reduced charge recombination provided by SnO₂-TiO₂ nanomace array, the nanostructured detector displays an excellent performance over that based on bare SnO₂ arrays. The impact of the growing time of TiO₂ branches on the performance of UV photodetector was systematically studied. The device based on optimized SnO₂-TiO₂ nanomace arrays exhibits a high responsivity of 0.145 A/W at 365 nm, a fast rising time of 0.037 s, and a decay time of 0.015 s, as well as excellent spectral selectivity. This self-powered photodetector is a promising candidate for high-sensitivity, high-speed UV-detecting application.

Transformation from Film to Nanorod via a Sacrifical Layer: Pulsed Laser Deposition of ZnO for Enhancing Photodetector Performance

A novel fabrication method for single crystalline ZnO nanorods by pulsed laser deposition (PLD) using a chemical-bath-deposited ZnS seed layer is proposed. For the substrate temperature (T_s) lower than 700 °C, the PLD-ZnO showed a polycrystalline phase and film-type morphology, resulting from the ZnS seed layer with a cubic phase. However, the ZnS film became a sacrifical layer and single crystalline ZnO(002) nanorods can be achieved at T_s of 900 °C, where ZnS was decomposed to zinc metals and sulfur fumes. The transformation from ZnO film to nanorod microstructure was demonstrated with the change of ZnS layer into Zn grains. Enhanced performance of the metal-semiconductor-metal photodetectors were fabricated with ZnO/ZnS samples grown at T_s of 500, 700, and 900 °C. The responsivities (@1 V and 370 nm) of these three devices were 1.71, 6.35, and 98.67 A/W, while their UV-to-visible discrimination ratios were 7.2, 16.5, and 439.1, respectively. Obviously, a higher light-capturing efficiency was obtained in the 900 °C-grown ZnO/ZnS device owing to its one-dimensional nanostructure with high crystal quality. The results indicate PLD combined with a sacrifical nanostructure is a promising method for obtaining high-quality ZnO nanorods, which paves the way for the fabrication of high performance ZnO-based devices.