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Patil SM, Kundale SS, Sutar SS, Patil PJ, Teli AM, Beknalkar SA, Kamat RK, Bae J, Shin JC, Dongale TD. Unraveling the importance of fabrication parameters of copper oxide-based resistive switching memory devices by machine learning techniques. Sci Rep 2023; 13:4905. [PMID: 36966189 PMCID: PMC10039863 DOI: 10.1038/s41598-023-32173-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/24/2022] [Accepted: 03/23/2023] [Indexed: 03/27/2023] Open
Abstract
In the present study, various statistical and machine learning (ML) techniques were used to understand how device fabrication parameters affect the performance of copper oxide-based resistive switching (RS) devices. In the present case, the data was collected from copper oxide RS devices-based research articles, published between 2008 to 2022. Initially, different patterns present in the data were analyzed by statistical techniques. Then, the classification and regression tree algorithm (CART) and decision tree (DT) ML algorithms were implemented to get the device fabrication guidelines for the continuous and categorical features of copper oxide-based RS devices, respectively. In the next step, the random forest algorithm was found to be suitable for the prediction of continuous-type features as compared to a linear model and artificial neural network (ANN). Moreover, the DT algorithm predicts the performance of categorical-type features very well. The feature importance score was calculated for each continuous and categorical feature by the gradient boosting (GB) algorithm. Finally, the suggested ML guidelines were employed to fabricate the copper oxide-based RS device and demonstrated its non-volatile memory properties. The results of ML algorithms and experimental devices are in good agreement with each other, suggesting the importance of ML techniques for understanding and optimizing memory devices.
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Affiliation(s)
- Suvarna M Patil
- Institute of Management, Bharati Vidyapeeth Deemed to be University, Sangli, 416 416, India
| | - Somnath S Kundale
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004, India
| | - Santosh S Sutar
- Yashwantrao Chavan School of Rural Development, Shivaji University, Kolhapur, 416004, India
| | - Pramod J Patil
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004, India
| | - Aviraj M Teli
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, South Korea
| | - Sonali A Beknalkar
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, South Korea
| | - Rajanish K Kamat
- Department of Electronics, Shivaji University, Kolhapur, 416004, India
- Dr. Homi Bhabha State University, 15, Madam Cama Road, Mumbai, 400032, India
| | - Jinho Bae
- Department of Ocean System Engineering, Jeju National University, 102 Jejudaehakro, Jeju, 63243, South Korea
| | - Jae Cheol Shin
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, South Korea.
| | - Tukaram D Dongale
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004, India.
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Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic system. Sci Rep 2021; 11:16601. [PMID: 34400734 PMCID: PMC8367949 DOI: 10.1038/s41598-021-96197-8] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/30/2021] [Accepted: 08/05/2021] [Indexed: 11/14/2022] Open
Abstract
Ideal resistive switching in resistive random-access memory (RRAM) should be ensured for synaptic devices in neuromorphic systems. We used an Ag/ZnO/TiN RRAM structure to investigate the effects of nonideal resistive switching, such as an unstable high-resistance state (HRS), negative set (N-set), and temporal disconnection, during the set process and the conductance saturation feature for synaptic applications. The device shows an I–V curve based on the positive set in the bipolar resistive switching mode. In 1000 endurance tests, we investigated the changes in the HRS, which displays large fluctuations compared with the stable low-resistance state, and the negative effect on the performance of the device resulting from such an instability. The impact of the N-set, which originates from the negative voltage on the top electrode, was studied through the process of intentional N-set through the repetition of 10 ON/OFF cycles. The Ag/ZnO/TiN device showed saturation characteristics in conductance modulation according to the magnitude of the applied pulse. Therefore, potentiation or depression was performed via consecutive pulses with diverse amplitudes. We also studied the spontaneous conductance decay in the saturation feature required to emulate short-term plasticity.
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Irregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrode. METALS 2021. [DOI: 10.3390/met11040653] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/23/2023]
Abstract
In this work, we examined the irregular resistive switching behaviors of a complementary metal–oxide–semiconductor (CMOS)-compatible Cu/Al2O3/Si resistor device. X-ray photoelectron spectroscopy (XPS) analysis confirmed the chemical and material compositions of a Al2O3 thin film layer and Si substrate. Bipolar resistive switching occurred in a more stable manner than the unipolar resistive switching in the device did. Five cells were verified over 50 endurance cycles in terms of bipolar resistive switching, and a good retention was confirmed for 10,000 s in the high-resistance state (HRS) and the low-resistance state (LRS). Both high reset current (~10 mA) and low reset current (<100 μA) coexisted in the bipolar resistive switching. We investigated nonideal resistive switching behaviors such as negative-set and current overshoot, which could lead to resistive switching failure.
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Li P, Wang D, Zhang Z, Guo Y, Jiang L, Xu C. Room-Temperature, Solution-Processed SiO x via Photochemistry Approach for Highly Flexible Resistive Switching Memory. ACS APPLIED MATERIALS & INTERFACES 2020; 12:56186-56194. [PMID: 33231429 DOI: 10.1021/acsami.0c16556] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Due to its high versatility and cost-effectiveness, solution process has a remarkable advantage over physical or chemical vapor deposition (PVD/CVD) methods in developing flexible resistive random-access memory (RRAM) devices. However, the reported solution-processed binary oxides, the most promising active layer materials for their compatibility with silicon-based semiconductor technology, commonly require high-temperature annealing (>145 °C) and the RRAMs based on them encounter insufficient flexibility. In this work, an amorphous and uniform SiOx active layer was prepared by irradiating an inorganic polymer, perhydropolysilazane, with a vacuum ultraviolet of 172 nm at room temperature. The corresponding RRAM showed typical bipolar resistance switching with a forming-free behavior. The device on polyimide film exhibited outstanding flexibility with a minimum bending radius of 0.5 mm, and no performance degradation was observed after bending 2000 times with a radius of 2.3 mm, which is the best among the reported solution-processed binary oxide-based RRAMs and can even rival the performance of PVD/CVD-based devices. This room-temperature solution process and the afforded highly flexible RRAMs have vast prospects for application in smart wearable electronics.
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Affiliation(s)
- Pengfei Li
- Key Laboratory of Science and Technology on High-tech Polymer Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100149, People's Republic of China
| | - Dan Wang
- Key Laboratory of Science and Technology on High-tech Polymer Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100149, People's Republic of China
| | - Zongbo Zhang
- Key Laboratory of Science and Technology on High-tech Polymer Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Yunlong Guo
- Key Laboratory of Science and Technology on High-tech Polymer Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Lang Jiang
- Key Laboratory of Science and Technology on High-tech Polymer Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Caihong Xu
- Key Laboratory of Science and Technology on High-tech Polymer Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100149, People's Republic of China
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5
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Ismail M, Hashmi A, Rana AM, Kim S. Eradicating negative-Set behavior of TiO 2-based devices by inserting an oxygen vacancy rich zirconium oxide layer for data storage applications. NANOTECHNOLOGY 2020; 31:325201. [PMID: 32316002 DOI: 10.1088/1361-6528/ab8b8e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Memristors, with low energy consumption, long data storage and fast switching speed, are considered to be promising for applications such as terabit data storage memory and hardware based neurocomputation applications. However, unexpected negative-Set behavior is a serious issue that causes deterioration of reliability and uniformity of switching parameters. In this work, negative-Set behavior of TiO2-based RRAM is successfully eradicated by inserting a thin oxygen vacancy rich ZrO2-x layer. In addition, oxygen vacancy rich ZrO2-x layer is also responsible for the enhancement of resistive switching characteristics in terms of excellent endurance performance (2000 DC cycles), good data retention upto 104 s and uniformity in Set/Reset voltages. Experimental results and density functional theory (DFT) analysis confirm that an interface layer TiOx has formed between highly reactive electrode (Ti) and ZrO2 interlayer. This interface layer is serving as a low series resistance layer and oxygen ion reservoir in Set-process and oxygen ions supplier in Reset-process to generate/refill the oxygen vacancies in the formation and rupture of conductive filaments. Comparing with the single layer Ti/TiO2/Pt device, it is noteworthy that the switching process in the bilayer (BL) Ti/ZrO2-x/TiO2/Pt memristor device is not affected even at high Reset-voltages, but the negative-Set behavior has been eradicated effectively. This work demonstrates that the insertion of a thin oxygen vacancy rich ZrO2-x interlayer into TiO2-based devices is a feasible approach to solve unpredicted negative-Set behavior of RRAM devices.
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Affiliation(s)
- Muhammad Ismail
- School of Electronics Engineering, Chungbuk National University, Cheongju 28644, Republic of Korea
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Kazar Mendes M, Martinez E, Ablett JM, Veillerot M, Gassilloud R, Bernard M, Renault O, Rueff JP, Barrett N. Chemistry of resistivity changes in TiTe/Al 2O 3 conductive-bridge memories. Sci Rep 2018; 8:17919. [PMID: 30560863 PMCID: PMC6298955 DOI: 10.1038/s41598-018-36131-7] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2018] [Accepted: 11/14/2018] [Indexed: 11/14/2022] Open
Abstract
We report the chemical phenomena involved in the reverse forming (negative bias on top electrode) and reset of a TaN/TiTe/Al2O3/Ta memory stack. Hard X-ray photoelectron spectroscopy was used to conduct a non-destructive investigation of the critical interfaces between the electrolyte (Al2O3) and the TiTe top and Ta bottom electrodes. During reverse forming, Te accumulates at the TiTe/Al2O3 interface, the TiOx layer between the electrolyte and the electrode is reduced and the TaOx at the interface with Al2O3 is oxidized. These interfacial redox processes are related to an oxygen drift toward the bottom electrode under applied bias, which may favour Te transport into the electrolyte. Thus, the forming processes is related to both Te release and also to the probable migration of oxygen vacancies inside the alumina layer. The opposite phenomena are observed during the reset. TiOx is oxidized near Al2O3 and TaOx is reduced at the Al2O3/Ta interface, following the O2- drift towards the top electrode under positive bias while Te is driven back into the TiTe electrode.
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Affiliation(s)
- M Kazar Mendes
- Univ. Grenoble Alpes, CEA, LETI, 38000, Grenoble, France.
| | - E Martinez
- Univ. Grenoble Alpes, CEA, LETI, 38000, Grenoble, France
| | - J M Ablett
- Synchrotron SOLEIL, l'Orme des Merisiers, Saint-Aubin, F-91192, Gif-sur-Yvette Cedex, France
| | - M Veillerot
- Univ. Grenoble Alpes, CEA, LETI, 38000, Grenoble, France
| | - R Gassilloud
- Univ. Grenoble Alpes, CEA, LETI, 38000, Grenoble, France
| | - M Bernard
- Univ. Grenoble Alpes, CEA, LETI, 38000, Grenoble, France
| | - O Renault
- Univ. Grenoble Alpes, CEA, LETI, 38000, Grenoble, France
| | - J P Rueff
- Synchrotron SOLEIL, l'Orme des Merisiers, Saint-Aubin, F-91192, Gif-sur-Yvette Cedex, France
- Sorbonne Université, UPMC Univ Paris 06, CNRS, UMR 7614, Laboratoire de Chimie Physique-Matière et Rayonnement, 75005, Paris Cedex 05, France
| | - N Barrett
- SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191, Gif-sur-Yvette, France
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Rosa J, Kiazadeh A, Santos L, Deuermeier J, Martins R, Gomes HL, Fortunato E. Memristors Using Solution-Based IGZO Nanoparticles. ACS OMEGA 2017; 2:8366-8372. [PMID: 31457375 PMCID: PMC6644988 DOI: 10.1021/acsomega.7b01167] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/11/2017] [Accepted: 10/20/2017] [Indexed: 05/13/2023]
Abstract
Solution-based indium-gallium-zinc oxide (IGZO) nanoparticles deposited by spin coating have been investigated as a resistive switching layer in metal-insulator-metal structures for nonvolatile memory applications. Optimized devices show a bipolar resistive switching behavior, low programming voltages of ±1 V, on/off ratios higher than 10, high endurance, and a retention time of up to 104 s. The better performing devices were achieved with annealing temperatures of 200 °C and using asymmetric electrode materials of titanium and silver. The physics behind the improved switching properties of the devices is discussed in terms of the oxygen deficiency of IGZO. Temperature analysis of the conductance states revealed a nonmetallic filamentary conduction. The presented devices are potential candidates for the integration of memory functionality into low-cost System-on-Panel technology.
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Affiliation(s)
- Jose Rosa
- i3N/CENIMAT,
Department of Materials Science, Faculty of Sciences and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal
| | - Asal Kiazadeh
- i3N/CENIMAT,
Department of Materials Science, Faculty of Sciences and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal
- E-mail:
| | - Lídia Santos
- i3N/CENIMAT,
Department of Materials Science, Faculty of Sciences and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal
| | - Jonas Deuermeier
- i3N/CENIMAT,
Department of Materials Science, Faculty of Sciences and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal
| | - Rodrigo Martins
- i3N/CENIMAT,
Department of Materials Science, Faculty of Sciences and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal
| | - Henrique Leonel Gomes
- FCT, Universidade do Algarve, 8005-139 Faro, Portugal
- IT-Instituto
de Telecomunicações, Av. Rovisco, Pais, 1, 1049-001 Lisboa, Portugal
| | - Elvira Fortunato
- i3N/CENIMAT,
Department of Materials Science, Faculty of Sciences and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal
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