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Janowitz C, Mahmoodinezhad A, Kot M, Morales C, Naumann F, Plate P, Zoellner MH, Bärwolf F, Stolarek D, Wenger C, Henkel K, Flege JI. Toward controlling the Al 2O 3/ZnO interface properties by in situ ALD preparation. Dalton Trans 2022; 51:9291-9301. [DOI: 10.1039/d1dt04008a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The electronic band alignment of an alumina/zinc oxide thin-film heterostructure solely grown by atomic layer deposition has been determined by XPS/UPS depth profiling, correlating the electronic properties with the interface chemical composition.
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Affiliation(s)
- Christoph Janowitz
- Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus–Senftenberg, K.-Zuse-Str. 1, 03046 Cottbus, Germany
| | - Ali Mahmoodinezhad
- Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus–Senftenberg, K.-Zuse-Str. 1, 03046 Cottbus, Germany
| | - Małgorzata Kot
- Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus–Senftenberg, K.-Zuse-Str. 1, 03046 Cottbus, Germany
| | - Carlos Morales
- Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus–Senftenberg, K.-Zuse-Str. 1, 03046 Cottbus, Germany
| | - Franziska Naumann
- SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin, Germany
| | - Paul Plate
- SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin, Germany
| | - Marvin Hartwig Zoellner
- IHP – Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
| | - Florian Bärwolf
- IHP – Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
| | - David Stolarek
- IHP – Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
| | - Christian Wenger
- IHP – Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
| | - Karsten Henkel
- Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus–Senftenberg, K.-Zuse-Str. 1, 03046 Cottbus, Germany
| | - Jan Ingo Flege
- Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus–Senftenberg, K.-Zuse-Str. 1, 03046 Cottbus, Germany
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Park SP, Tak YJ, Kim HJ, Lee JH, Yoo H, Kim HJ. Analysis of the Bipolar Resistive Switching Behavior of a Biocompatible Glucose Film for Resistive Random Access Memory. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1800722. [PMID: 29761552 DOI: 10.1002/adma.201800722] [Citation(s) in RCA: 27] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2018] [Revised: 02/24/2018] [Indexed: 06/08/2023]
Abstract
Resistive random access memory (RRAM) devices are fabricated through a simple solution process using glucose, which is a natural biomaterial for the switching layer of RRAM. The fabricated glucose-based RRAM device shows nonvolatile bipolar resistive switching behavior, with a switching window of 103 . In addition, the endurance and data retention capability of glucose-based RRAM exhibit stable characteristics up to 100 consecutive cycles and 104 s under constant voltage stress at 0.3 V. The interface between the top electrode and the glucose film is carefully investigated to demonstrate the bipolar switching mechanism of the glucose-based RRAM device. The glucose based-RRAM is also evaluated on a polyimide film to verify the possibility of a flexible platform. Additionally, a cross-bar array structure with a magnesium electrode is prepared on various substrates to assess the degradability and biocompatibility for the implantable bioelectronic devices, which are harmless and nontoxic to the human body. It is expected that this research can provide meaningful insights for developing the future bioelectronic devices.
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Affiliation(s)
- Sung Pyo Park
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Young Jun Tak
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Hee Jun Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Jin Hyeok Lee
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Hyukjoon Yoo
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Hyun Jae Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
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