Current-Induced Domain Wall Motion and Tilting in Perpendicularly Magnetized Racetracks

Granular Magnetization Switching in Pt/Co/Ti Structure with HfOx Insertion for In-Memory Computing Applications

Exploring multiple states based on the domain wall (DW) position has garnered increased attention for in-memory computing applications, particularly focusing on the utilization of spin-orbit torque (SOT) to drive DW motion. However, devices relying on the DW position require efficient DW pinning. Here, we achieve granular magnetization switching by incorporating an HfOx insertion layer between the Co/Ti interface. This corresponds to a transition in the switching model from the DW motion to DW nucleation. Compared to the conventional Pt/Co/Ti structure, incorporation of the HfOx layer results in an enhanced SOT efficiency and a lower switching current density. We also realized stable multistate storage and synaptic plasticity by applying pulse current in the Pt/Co/HfOx/Ti device. The simulation of artificial neural networks (ANN) based on the device can perform digital recognition tasks with an accuracy rate of 91%. These results identify that DW nucleation with a Pt/Co/HfOx/Ti based device has potential applications in multistate storage and ANN.

Engineering Pt/Co/AlOxheterostructures to enhance the Dzyaloshinskii-Moriya interaction

The study of interfacial Dzyaloshinskii-Moriya interaction (DMI) in perpendicularly magnetized structurally asymmetric heavy metal/ferromagnet multilayer systems is of high importance due to the formation of chiral magnetic textures in the presence of DMI. Here, we report the impact of cobalt oxidation at the Co/AlO_xinterface in Pt/Co/AlO_xtrilayer structures on the DMI by varying the post-growth annealing time, Al thickness and substrate. To quantify DMI we employed magneto-optical imaging of the asymmetric domain wall expansion, hysteresis loop shift, and spin-wave spectroscopy techniques. We further correlated the Co oxidation with low-temperature Hall effect measurements and x-ray photoelectron spectroscopy. Our results emphasize the importance of full characterization of the magnetic films that could be used for magnetic random access memory technologies when subjected to the semiconductor temperature processing conditions, as the magnetic interactions are critical for device performance and can be highly sensitive to oxidation and other effects.

Soft X-ray magnetic scattering studies of 3D magnetic morphology along buried interfaces in NiFe/CoPd/NiFe nanostructures

With the continuing interest in new magnetic materials for sensor devices and data storage applications, the community needs reliable and sensitive tools for the characterization of such materials. Soft X-rays tuned to elemental absorption edges are a depth and element sensitive probe of magnetic structure at the nanoscale, and scattering measurements have the potential to provide 3D magnetic structural information of the material. In this work we develop a methodology in transmission geometry that allows one to probe the spatial distribution of the magnetization along the different layers of magnetic heterostructures. We study the in-plane/out-of-plane transition of magnetic domains in multilayer thin film systems consisting of two layers of NiFe top and bottom, and a 50 repeat Co/Pd multilayer in the centre. The experimental data are analysed by simulating scattering data starting from micromagnetic simulations, and we find that the out of plane domains of the Co/Pd multilayer intrude into the NiFe layers to a greater extent than would be expected from micromagnetic simulations performed using the standard magnetically isotropic input parameters for the NiFe layers.