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Jin K, Liu X. Regulation of CC bonds in penta-graphene by oxidative functionalization: a prototype of penta-graphene oxide (PGO). Phys Chem Chem Phys 2024; 26:23730-23738. [PMID: 39229698 DOI: 10.1039/d3cp05477b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/05/2024]
Abstract
Penta-graphene (PG) is currently a research hotspot for carbon-based nanomaterials. Herein, we studied the effect of oxidative functionalization on the electric properties of PG by regulating the CC bond. Our results show that the chemical reactivity of the oxidative functionalized PG system is significantly enhanced due to the presence of the dangling bonds, which is achieved at the cost of reduced stability. The oxidative functionalized PG shows enhanced hydrophilicity, which is similar to graphene oxide (GO). More importantly, we found that the adsorption energy decreased gradually with the increase of oxidative functional group coverage, which indicated that hydrogen bonds (H-bonds) between the polarized groups could improve the stability of the oxidative functionalized PG. Finally, we discussed the ratio of carbon and oxygen to hydrogen in oxidative functionalized PG to provide theoretical guidance for experimental characterization. These findings are expected to provide deep insights into understanding the CC regulation in PG and rationally designing and preparing penta-graphene oxide (PGO).
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Affiliation(s)
- Kaixuan Jin
- Center for Quantum Sciences and School of Physics, Northeast Normal University, Changchun 130117, China.
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Educations, Normal University, Changchun, 130024, China
| | - Xiaojie Liu
- Center for Quantum Sciences and School of Physics, Northeast Normal University, Changchun 130117, China.
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Educations, Normal University, Changchun, 130024, China
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2
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Yang N, Chen T, Xu Z, Liu G, Dong X, Yu Y, Xiao X. Studying the Adsorption of Gas Molecules and Defects on Modulating the Electronic Transport Characteristics of Monolayer Penta-BN 2-Based Devices. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:15507-15516. [PMID: 37882487 DOI: 10.1021/acs.langmuir.3c01752] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/27/2023]
Abstract
Two-dimensional atomic layer materials, as an important part of the post-Moore era, have recently become an ideal choice for the preparation of high-efficiency, low-power, and miniaturized gas sensors. In this work, our study utilized density functional theory and the nonequilibrium Green's function method to investigate the electronic properties of the pentagonal BN2 (P-BN2) monolayer, as well as its gas-sensing properties for organic and inorganic gases. We also investigated how defects affect the quantum transport properties of the P-BN2-based device. Our findings demonstrate that the CO, H2S, NH3, SO2, C2H5OH, C3H6OH, CH3OH, and CH4 undergo physisorption on the P-BN2 monolayer, while NO, NO2, C2H2, C2H4, and HCHO undergo chemisorption. Then, we analyzed the impact of gas molecules chemisorbed on the P-BN2 monolayer on the electronic transport properties of the P-BN2-based gas sensor. When these five gas molecules are adsorbed, the current of the P-BN2-based gas sensor is greatly reduced. In addition, the effect of defects on the quantum transport properties of the P-BN2-based device is investigated. The results indicate that defects of N, B, and BN atoms lead to a decrease in the current of P-BN2-based nanodevices. Moreover, both the adsorption of gas molecules and the formation of vacancy defects leading to a decrease in device current can be revealed by the local device density of states near the zero-bias Fermi level, elucidating their microscopic mechanisms. Finally, gas molecules can also cause a decrease in the current of defect systems. These theoretical studies are of great significance for exploring two-dimensional atomic layer materials as high-efficiency gas sensors.
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Affiliation(s)
- Ning Yang
- School of Software Engineering, Jiangxi University of Science and Technology, Nanchang 330013, PR China
- Energy Materials Computing Center, Jiangxi University of Science and Technology, Nanchang 330013, PR China
| | - Tong Chen
- Energy Materials Computing Center, Jiangxi University of Science and Technology, Nanchang 330013, PR China
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, PR China
| | - Zhonghui Xu
- School of Software Engineering, Jiangxi University of Science and Technology, Nanchang 330013, PR China
| | - Guogang Liu
- School of Software Engineering, Jiangxi University of Science and Technology, Nanchang 330013, PR China
- Energy Materials Computing Center, Jiangxi University of Science and Technology, Nanchang 330013, PR China
| | - Xiansheng Dong
- Energy Materials Computing Center, Jiangxi University of Science and Technology, Nanchang 330013, PR China
| | - Yang Yu
- Energy Materials Computing Center, Jiangxi University of Science and Technology, Nanchang 330013, PR China
| | - Xianbo Xiao
- School of Computer Science, Jiangxi University of Chinese Medicine, Nanchang 330004, PR China
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Wang H, Li G, Yuan JH, Wang J, Zhang P, Shan Y. Two-Dimensional Planar Penta-NiPN with Ultrahigh Carrier Mobility and Its Potential Application in NO and NO 2 Gas Sensing. MICROMACHINES 2023; 14:1407. [PMID: 37512718 PMCID: PMC10383591 DOI: 10.3390/mi14071407] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2023] [Revised: 07/06/2023] [Accepted: 07/07/2023] [Indexed: 07/30/2023]
Abstract
Two-dimensional (2D) materials with novel structures and electronic properties are promising candidates for the next generation of micro- and nano-electronic devices. Herein, inspired by the recent experimental synthesis of penta-NiN2 (ACS Nano, 2021, 15, 13539-13546), we propose for the first time a novel ternary penta-NiPN monolayer with high stability by partial element substitution. Our predicted penta-NiPN monolayer is a quasi-direct bandgap (1.237 eV) semiconductor with ultrahigh carrier mobilities (103-105 cm2V-1s-1). Furthermore, we systematically studied the adsorption properties of common gas molecules (CO, CO2, CH4, H2, H2O, H2S, N2, NO, NO2, NH3, and SO2) on the penta-NiPN monolayer and its effects on electronic properties. According to the energetic, geometric, and electronic analyses, the penta-NiPN monolayer is predicted to be a promising candidate for NO and NO2 molecules. The excellent electronic properties of and the unique selectivity of the penta-NiPN monolayer for NO and NO2 adsorption suggest that it has high potential in advanced electronics and gas sensing applications.
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Affiliation(s)
- Hao Wang
- Wuhan Second Ship Design and Research Institute, Wuhan 430205, China
| | - Gang Li
- College of Railway Rolling Stock, Wuhan Railway Vocational College of Technology, Wuhan 430205, China
| | - Jun-Hui Yuan
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Jiafu Wang
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Pan Zhang
- School of Integrated Circuits, Peking University, Beijing 100871, China
| | - Yahui Shan
- Wuhan Second Ship Design and Research Institute, Wuhan 430205, China
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4
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Liu W, Wang J, Zheng X, Zhang K, Liu X. Two dimensional monolayers TetraHex-CX 2 (X = N, P, As, and Sb) with superior electronic, mechanical and optical properties. Phys Chem Chem Phys 2022; 24:29601-29608. [PMID: 36448680 DOI: 10.1039/d2cp04525g] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/05/2022]
Abstract
The discovery of graphene in 2004 opened a new world of two dimensional (2D) materials, stimulating the broad explorations of other novel 2D carbon structures and their derivatives in many materials fields. Although many 2D materials have been proposed theoretically, the experimental fabrication of them remains a big challenge, leading to more efforts to explore novel 2D materials with excellent properties. Here, we constructed four 2D monolayers TetraHex-CX2 (X = N, P, As, and Sb) using first-principles calculations. These thin materials composed of tetragonal and hexagonal rings exhibit good stabilities, extraordinarily flexible mechanical properties, indirect bandgaps (≤2.30 eV except TetraHex-CN2) with a semiconducting nature and a strong optical absorption up to 105 cm-1, showing the potential nanomechanical, nanoelectronic and optoelectronic applications. On building the structure-property relationship, we found that the Pauling electronegativity of X has an important influence on the electronic and mechanical properties of CX2, which provides a significant understanding of the fundamental origin of materials properties and is helpful to design novel 2D materials with special properties.
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Affiliation(s)
- Wei Liu
- School of Chemistry and Environmental Engineering, Sichuan University of Science & Engineering, Zigong, Sichuan 643000, P. R. China.
| | - Jun Wang
- School of Chemistry and Environmental Engineering, Sichuan University of Science & Engineering, Zigong, Sichuan 643000, P. R. China.
| | - Xingwen Zheng
- School of Chemistry and Environmental Engineering, Sichuan University of Science & Engineering, Zigong, Sichuan 643000, P. R. China.
| | - Kaiming Zhang
- School of Chemistry and Environmental Engineering, Sichuan University of Science & Engineering, Zigong, Sichuan 643000, P. R. China.
| | - Xiaoqiang Liu
- School of Chemistry and Environmental Engineering, Sichuan University of Science & Engineering, Zigong, Sichuan 643000, P. R. China.
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Jin K, Lu K, Liu X. Effect of the co-adsorption of small molecules from air on the properties of penta-graphene and their proton transfer calculation. Phys Chem Chem Phys 2022; 24:4785-4795. [PMID: 35144277 DOI: 10.1039/d1cp05136a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Penta-graphene has attracted considerable attention due to its unique structure and novel properties. Herein, we studied the effect of the co-adsorption of small molecules from air on the properties of penta-graphene using first-principles calculations. Our results show that oxygen molecules can be self-decomposed on the surface of penta-graphene and the process of O2 decomposition is an exothermic reaction. On the contrary, the adsorption of H2O or N2 molecule on penta-graphene exhibits weak interaction characteristic. For co-adsorption systems, the adsorption of N2 molecule has no effect on the electronic properties of penta-graphene because the N2 molecule is more inert than other molecules. Hydrogen bonds (H-bonds) have been observed in the co-adsorption of H2O and O2 on penta-graphene. We find that shorter H-bonds lead to higher stability of the systems. We also explore the proton transfer process between H2O and oxidized penta-graphene. Our results show that the proton transfer process is relatively difficult due to the high energy barrier. However, double-proton transfer is an exothermic process since the energy of the final state is 0.11 eV lower than that of the initial state. These results indicate that the configuration of oxidized penta-graphene is complicated. Our research provides a theoretical basis and important guidance for the experimental synthesis and functionalization of penta-graphene.
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Affiliation(s)
- Kaixuan Jin
- Center for Quantum Sciences and School of Physics, Northeast Normal University, Changchun, 130117, China. .,Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Educations, Normal University, Changchun, 130024, China
| | - Kun Lu
- Center for Quantum Sciences and School of Physics, Northeast Normal University, Changchun, 130117, China. .,Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Educations, Normal University, Changchun, 130024, China
| | - Xiaojie Liu
- Center for Quantum Sciences and School of Physics, Northeast Normal University, Changchun, 130117, China. .,Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Educations, Normal University, Changchun, 130024, China
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Density Functional Theory Study of B, N, and Si Doped Penta-Graphene as the Potential Gas Sensors for NH3 Detection. MEMBRANES 2022; 12:membranes12010077. [PMID: 35054603 PMCID: PMC8777969 DOI: 10.3390/membranes12010077] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/15/2021] [Revised: 12/31/2021] [Accepted: 01/06/2022] [Indexed: 01/31/2023]
Abstract
Designing a high-performance gas sensor to efficiently detect the hazardous NH3 molecule is beneficial to air monitoring and pollution control. In this work, the first-principles calculations were employed to investigate the adsorption structures, electronic characteristics, and gas sensing properties of the pristine and B-, N-, P-, Al-, and Si-doped penta-graphene (PG) toward the NH3, H2S, and SO2 molecules. The results indicate that the pristine PG is insensitive to those toxic gases due to the weak adsorption strength and long adsorption distance. Nevertheless, the doping of B, N, Al, and Si (B and Al) results in the transition of NH3 (H2S and SO2) adsorption from physisorption to chemisorption, which is primarily ascribed to the large charge transfer and strong orbital hybridizations between gas molecules and doping atoms. In addition, NH3 adsorption leads to the remarkable variation of electrical conductivity for the B-, N-, and Si-doped PG, and the adsorption strength of NH3 on the B-, N-, and Si-doped PG is larger than that of H2S and SO2. Moreover, the chemically adsorbed NH3 molecule on the N-, B-, and Si-doped PG can be effectively desorbed by injecting electrons into the systems. Those results shed light on the potential application of PG-based nanosheets as reusable gas sensors for NH3 detection.
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Hao J, Wei F, Zhang X, Li L, Zhang C, Liang D, Ma X, Lu P. Defect and Doping Engineered Penta-graphene for Catalysis of Hydrogen Evolution Reaction. NANOSCALE RESEARCH LETTERS 2021; 16:130. [PMID: 34387780 PMCID: PMC8363696 DOI: 10.1186/s11671-021-03590-3] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2021] [Accepted: 08/05/2021] [Indexed: 05/19/2023]
Abstract
Water electrolysis is a sustainable and clean method to produce hydrogen fuel via hydrogen evolution reaction (HER). Using stable, effective and low-cost electrocatalysts for HER to substitute expensive noble metals is highly desired. In this paper, by using first-principles calculation, we designed a defect and N-, S-, P-doped penta-graphene (PG) as a two-dimensional (2D) electrocatalyst for HER, and its stability, electronic properties and catalytic performance were investigated. The Gibbs free energy (ΔGH), which is the best descriptor for the HER, is calculated and optimized, the calculation results show that the ΔGH can be 0 eV with C2 vacancies and P doping at C1 active sites, which should be the optimal performance for a HER catalyst. Moreover, we reveal that the larger charge transfer from PG to H, the closer ΔGH is to zero according to the calculation of the electron charge density differences and Bader charges analysis. Ulteriorly, we demonstrated that the HER performance prefers the Volmer-Heyrovsky mechanism in this study.
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Affiliation(s)
- Jinbo Hao
- School of Science, Xi'an University of Architecture and Technology, Xi'an, 710055, China
| | - Feng Wei
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Xinhui Zhang
- School of Science, Xi'an University of Architecture and Technology, Xi'an, 710055, China.
| | - Long Li
- School of Science, Xi'an University of Architecture and Technology, Xi'an, 710055, China
| | - Chunling Zhang
- School of Science, Xi'an University of Architecture and Technology, Xi'an, 710055, China
| | - Dan Liang
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876, China.
| | - Xiaoguang Ma
- School of Physics and Optoelectronic Engineering, Ludong University, Yantai, 264025, China
| | - Pengfei Lu
- School of Science, Xi'an University of Architecture and Technology, Xi'an, 710055, China
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876, China
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Obodo KO, Ouma CNM, Obodo JT, Gebreyesus G, Rai DP, Ukpong AM, Bouhafs B. Sn 3C 2monolayer with transition metal adatom for gas sensing: a density functional theory studies. NANOTECHNOLOGY 2021; 32:355502. [PMID: 34034245 DOI: 10.1088/1361-6528/ac04d0] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2021] [Accepted: 05/25/2021] [Indexed: 06/12/2023]
Abstract
The gas sensing properties of pristine Sn3C2monolayer and different transition metal adatom (TM-Sn3C2, where TM = Fe, Co, Ni, Cu, Ru, Rh, Pd and Ag) was investigated using van der Waals corrected density functional theory. The understanding and potential of use of Sn3C2monolayers as sensors or adsorbent for CO, CO2, NO, NO2and SO2gaseous molecules is evaluated by calculating the adsorption and desorption energetics. From the calculated adsorption energies, we found that the pristine Sn3C2monolayer and 3dTM has desirable properties for removal of the considered molecules based on their high adsorption energy, however the 4dTM is applicable as recoverable sensors. We applied an Arrhenius-type equation to evaluate the recovery time for the desorption of the molecules on the pristine and TM adatom on Sn3C2monolayer. We found that the negative adsorption energies from -1 to -2 eV of the molecules resulted in easier recovery of the adsorbed gases at reasonable temperatures compared to adsorption energies in between 0 and -1 eV (weakly physiosorbed) and below -2 eV (strongly chemisorbed). Hence, we obtained that the Rh-Sn3C2, Ru-Sn3C2, Pd-Sn3C2, Pd-Sn3C2, and Rh-Sn3C2monolayers are good recoverable scavengers for the CO, CO2, NO, NO2, and SO2molecules. The current theoretical calculations provide new insight on the effect of TM adatoms on the structural, electronic, and magnetic properties of the Sn3C2monolayer and different transition metal adatom as well as shed light on their application as gas sensors/scavengers.
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Affiliation(s)
- K O Obodo
- HySA Infrastructure Centre of Competence, Faculty of Engineering, North-West University (NWU), P. Bag X6001, Potchefstroom, 2520, South Africa
| | - C N M Ouma
- HySA Infrastructure Centre of Competence, Faculty of Engineering, North-West University (NWU), P. Bag X6001, Potchefstroom, 2520, South Africa
| | - J T Obodo
- Physics Department, University of Nigeria, Nsukka, Nigeria
| | - G Gebreyesus
- Department of Physics, School of Physical and Mathematical Sciences, College of Basic and Applied Sciences, University of Ghana, Ghana
| | - D P Rai
- Physical Sciences Research Center (PSRC), Pachhunga University College Aizawl, Mizoram, 796001, India
| | - A M Ukpong
- Theoretical and computational Condensed Matter and Materials Physics Group, School of Chemistry and Physics, University of Kwazulu-Natal, Pietermaritzburg, South Africa
| | - B Bouhafs
- Laboratoire de Modélisation et Simulation en Sciences des Matériaux, Université Djillali Liabés de Sidi Bel-Abbés, Sidi Bel-Abbés, 22000, Algeria
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Lima KAL, Pereira Júnior ML, Monteiro FF, Roncaratti LF, Ribeiro Júnior LA. O 2 adsorption on defective Penta-Graphene lattices: A DFT study. Chem Phys Lett 2021. [DOI: 10.1016/j.cplett.2020.138229] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/22/2022]
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Chen J, Cui H, Wang P, Zheng Y, Wang D, Chen H, Yuan H. Band gap and magnetic engineering of penta-graphene via adsorption of small transition clusters. Phys Chem Chem Phys 2020; 22:26155-26166. [PMID: 33185209 DOI: 10.1039/d0cp04427j] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/20/2023]
Abstract
Penta-graphene has been intensively studied owing to its superior properties such as being an intrinsic semiconductor and having two dimensional stability. However, the nonmagnetic character makes it difficult for straightforward application in the fields of spintronic or information storage. Here, the deposition effects of Fe-group and Co-group transition metal (TM = Fe, Ru, Os; Co, Rh, Ir) clusters on the penta-graphene have been systemically investigated for their electronic and magnetic properties by using density functional theory (DFT) calculations. We found that the TM deposition stability on penta-graphene is overall greater than that on graphene. Importantly, TM adatoms (adclusters) not only change penta-graphene from being a wide band-gap semiconductor to a narrow band-gap semiconductor, but also introduce large magnetic moments into systems simultaneously. It is worth noting that the Ir5 cluster on penta-graphene is a good candidate for realizing the magnetic half-metallic materials. Our calculated results demonstrate that adatoms can exhibit large out-of-plane magnetic anisotropy energy, e.g., the Os adatom presents the largest value of 113 meV. Therefore, from the application point of view, magnetic functionalization of penta-graphene by TM clusters facilitates its application as a spintronic device or a high-density information storage device.
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Affiliation(s)
- Jia Chen
- School of Physical Science and Technology, Southwest University, Chongqing, 400715, China.
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Hu L, Zhang Y, Zhang H, Wu Y. Catalytic reduction of NO by CO over Fe-doped penta-graphene as a promising catalyst: A density functional study. MOLECULAR CATALYSIS 2020. [DOI: 10.1016/j.mcat.2020.111194] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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12
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Lan Y, Xia LX, Huang T, Xu W, Huang GF, Hu W, Huang WQ. Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe 2 van der Waals Heterostructure. NANOSCALE RESEARCH LETTERS 2020; 15:180. [PMID: 32955632 PMCID: PMC7505914 DOI: 10.1186/s11671-020-03409-7] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2020] [Accepted: 09/14/2020] [Indexed: 05/25/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides with intrinsically passivated surfaces are promising candidates for ultrathin optoelectronic devices that their performance is strongly affected by the contact with the metallic electrodes. Herein, first-principle calculations are used to construct and investigate the electronic and interfacial properties of 2D MoTe2 in contact with a graphene electrode by taking full advantage of them. The obtained results reveal that the electronic properties of graphene and MoTe2 layers are well preserved in heterostructures due to the weak van der Waals interlayer interaction, and the Fermi level moves toward the conduction band minimum of MoTe2 layer thus forming an n type Schottky contact at the interface. More interestingly, the Schottky barrier height and contact types in the graphene-MoTe2 heterostructure can be effectively tuned by biaxial strain and external electric field, which can transform the heterostructure from an n type Schottky contact to a p type one or to Ohmic contact. This work provides a deeper insight look for tuning the contact types and effective strategies to design high performance MoTe2-based Schottky electronic nanodevices.
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Affiliation(s)
- Yu Lan
- College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang, 421002, China.
| | - Li-Xin Xia
- Department of Physics, Kashi University, Kashi, 844006, China
| | - Tao Huang
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Weiping Xu
- Dingcheng District Power Supply Branch of Changde Power Supply Company, State Grid, Changde, 415100, China
| | - Gui-Fang Huang
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Wangyu Hu
- School of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Wei-Qing Huang
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha, 410082, China.
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Ghadiri M, Ghashghaee M, Ghambarian M. Influence of NiO decoration on adsorption capabilities of black phosphorus monolayer toward nitrogen dioxide: periodic DFT calculations. MOLECULAR SIMULATION 2020. [DOI: 10.1080/08927022.2020.1802023] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2022]
Affiliation(s)
- Mahdi Ghadiri
- Informetrics Research Group, Ton Duc Thang University, Ho Chi Minh City, Vietnam
- Faculty of Applied Sciences, Ton Duc Thang University, Ho Chi Minh City, Vietnam
| | - Mohammad Ghashghaee
- Faculty of Petrochemicals, Iran Polymer and Petrochemical Institute, Tehran, Iran
| | - Mehdi Ghambarian
- Gas Conversion Department, Faculty of Petrochemicals, Iran Polymer and Petrochemical Institute, Tehran, Iran
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