Electric Field Controlled Indirect-Direct-Indirect Band Gap Transition in Monolayer InSe

Electric-field-controlled electronic structures and quantum transport in monolayer InSe nanoribbons

Electronic structures and quantum transport properties of the monolayer InSe nanoribbons are studied by adopting the tight-binding model in combination with the lattice Green function method. Besides the normal bulk and edge electronic states, a unique electronic state dubbed as edge-surface is found in the InSe nanoribbon with zigzag edge type. In contrast to the zigzag InSe nanoribbon, a singular electronic state termed as bulk-surface is observed along with the normal bulk and edge electronic states in the armchair InSe nanoribbons. Moreover, the band gap, the transversal electron probability distributions in the two sublayers, and the electronic state of the topmost valence subband can be manipulated by adding a perpendicular electric field to the InSe nanoribbon. Further study shows that the charge conductance of the two-terminal monolayer InSe nanoribbons can be switched on or off by varying the electric field strength. In addition, the transport of the bulk electronic state is delicate to even a weak disorder strength, however, that of the edge and edge-surface electronic states shows a strong robustness against to the disorders. These findings may be helpful to understand the electronic characteristics of the InSe nanostructures and broaden their potential applications in two-dimensional nanoelectronic devices as well.

Strain- and electric field-enhanced optical properties of the penta-siligraphene monolayer

The effect of biaxial strain and an external electric field on the optical properties of the penta-siligraphene monolayer are reported.

Layered post-transition-metal dichalcogenide SnGe2N4 as a promising photoelectric material: a DFT study

First-principles calculations were performed to study a novel layered SnGe₂N₄ compound, which was found to be dynamically and thermally stable in the 2H phase, with the space group P6̄m2 and lattice constant a = 3.143 Å. Due to its hexagonal structure, SnGe₂N₄ exhibits isotropic mechanical properties on the x–y plane, where the Young’s modulus is 335.49 N m⁻¹ and the Poisson’s ratio is 0.862. The layered 2H SnGe₂N₄ is a semiconductor with a direct band gap of 1.832 eV, allowing the absorption of infrared and visible light at a rate of about 10⁴ cm⁻¹. The DOS is characterized by multiple high peaks in the valence and conduction bands, making it possible for this semiconductor to absorb light in the ultraviolet region with an even higher rate of 10⁵ cm⁻¹. The band structure, with a strongly concave downward conduction band and rather flat valence band, leads to a high electron mobility of 1061.66 cm² V⁻¹ s⁻¹, which is substantially greater than the hole mobility of 28.35 cm² V⁻¹ s⁻¹. This difference in mobility is favorable for electron–hole separation. These advantages make layered 2H SnGe₂N₄ a very promising photoelectric material. Furthermore, the electronic structure of 2H SnGe₂N₄ responds well to strain and an external electric field due to the specificity of the p–d hybridization, which predominantly constructs the valence bands. As a result, strain and external electric fields can efficiently tune the band gap value of 2H SnGe₂N₄, where compressive strain widens the band gap, meanwhile tensile strain and external electric fields cause band gap reduction. In particular, the band gap is decreased by about 0.25 eV when the electric field strength increases by 0.1 V Å⁻¹, making a semiconductor–metal transition possible for the layered SnGe₂N₄.

The promising photoelectric semiconductor 2H SnGe₂N₄ has a tunable electronic structure which is favorable for the absorption of light in the infrared and visible regions.

Janus monolayer HfSO with improved optical properties as a novel material for photovoltaic and photocatalyst applications

First principles calculations were performed to investigate the photocatalytic behavior of 2D Janus monolayer HfSO at equilibrium and under the influence of strains and external electric fields.

Indirect momentum excitation of graphene using high transversal modes of light in hyperbolic media

Electrons in indirect semiconductors can optically transit between the valance and conduction band edges only when the momentum conservation is satisfied with help of a third quasi-particle, such as a phonon. In this report, we theoretically demonstrate that indirect interband transition of graphene electrons can be optically enabled only by light with highly enhanced transversal modes, which can be generated by scattering of point dipole radiation with periodic metal slits fabricated in a natural hyperbolic material. The light-matter interaction for graphene electrons is reformulated by using indirect transition matrix elements, and interband polarizations of graphene are obtained by solving quantum kinetic equations of motion in the semi-classical regime. The interband optical current density of graphene as a function of the polarization angle of the incident field shows clear hexagonal response to the high transversal modes of light, which results from the low dependence on dephasing rate and dominance of the indirect polarizations over the direct interband contributions.

Two-dimensional biomaterials: material science, biological effect and biomedical engineering applications

To date, nanotechnology has increasingly been identified as a promising and efficient means to address a number of challenges associated with public health. In the past decade, two-dimensional (2D) biomaterials, as a unique nanoplatform with planar topology, have attracted explosive interest in various fields such as biomedicine due to their unique morphology, physicochemical properties and biological effect. Motivated by the progress of graphene in biomedicine, dozens of types of ultrathin 2D biomaterials have found versatile bio-applications, including biosensing, biomedical imaging, delivery of therapeutic agents, cancer theranostics, tissue engineering, as well as others. The effective utilization of 2D biomaterials stems from the in-depth knowledge of structure-property-bioactivity-biosafety-application-performance relationships. A comprehensive summary of 2D biomaterials for biomedicine is still lacking. In this comprehensive review, we aim to concentrate on the state-of-the-art 2D biomaterials with a particular focus on their versatile biomedical applications. In particular, we discuss the design, fabrication and functionalization of 2D biomaterials used for diverse biomedical applications based on the up-to-date progress. Furthermore, the interactions between 2D biomaterials and biological systems on the spatial-temporal scale are highlighted, which will deepen the understanding of the underlying action mechanism of 2D biomaterials aiding their design with improved functionalities. Finally, taking the bench-to-bedside as a focus, we conclude this review by proposing the current crucial issues/challenges and presenting the future development directions to advance the clinical translation of these emerging 2D biomaterials.