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Wang YJ, Yang ZL, Chen JW, Zhu R, Hsieh SH, Chang SH, Lin HY, Lin CL, Chen YC, Chen CH, Huang BC, Chiu YP, Yeh CH, Gao P, Chiu PW, Chen YC, Chu YH. Nonvolatile Modulation of Bi 2O 2Se/Pb(Zr,Ti)O 3 Heteroepitaxy. ACS APPLIED MATERIALS & INTERFACES 2024; 16:27523-27531. [PMID: 38745497 PMCID: PMC11145581 DOI: 10.1021/acsami.4c02525] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/13/2024] [Revised: 04/05/2024] [Accepted: 05/07/2024] [Indexed: 05/16/2024]
Abstract
The pursuit of high-performance electronic devices has driven the research focus toward 2D semiconductors with high electron mobility and suitable band gaps. Previous studies have demonstrated that quasi-2D Bi2O2Se (BOSe) has remarkable physical properties and is a promising candidate for further exploration. Building upon this foundation, the present work introduces a novel concept for achieving nonvolatile and reversible control of BOSe's electronic properties. The approach involves the epitaxial integration of a ferroelectric PbZr0.2Ti0.8O3 (PZT) layer to modify BOSe's band alignment. Within the BOSe/PZT heteroepitaxy, through two opposite ferroelectric polarization states of the PZT layer, we can tune the Fermi level in the BOSe layer. Consequently, this controlled modulation of the electronic structure provides a pathway to manipulate the electrical properties of the BOSe layer and the corresponding devices.
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Affiliation(s)
- Yong-Jyun Wang
- Department
of Materials Science and Engineering, National
Tsing Hua University, Hsinchu 300044, Taiwan
| | - Zi-Liang Yang
- Graduate
School of Advanced Technology, National
Taiwan University, Taipei 106319, Taiwan
| | - Jia-Wei Chen
- Department
of Materials Science and Engineering, National
Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan
| | - Ruixue Zhu
- International
Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Electron
Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
| | - Shang-Hsien Hsieh
- National
Synchrotron Radiation Research Center, Hsinchu 300092, Taiwan
| | - Sen-Hao Chang
- Department
of Electrophysics, National Yang Ming Chiao
Tung University, Hsinchu 300093, Taiwan
| | - Hong-Yuan Lin
- Department
of Physics, National Cheng Kung University, Tainan 701401, Taiwan
| | - Chun-Liang Lin
- Department
of Electrophysics, National Yang Ming Chiao
Tung University, Hsinchu 300093, Taiwan
| | - Yi-Chun Chen
- Department
of Physics, National Cheng Kung University, Tainan 701401, Taiwan
| | - Chia-Hao Chen
- National
Synchrotron Radiation Research Center, Hsinchu 300092, Taiwan
| | - Bo-Chao Huang
- Department
of Physics, National Taiwan University, Taipei 106319, Taiwan
| | - Ya-Ping Chiu
- Graduate
School of Advanced Technology, National
Taiwan University, Taipei 106319, Taiwan
- Department
of Physics, National Taiwan University, Taipei 106319, Taiwan
| | - Chao-Hui Yeh
- Department
of Electrical Engineering, National Tsing
Hua University, Hsinchu 300044, Taiwan
| | - Peng Gao
- International
Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Electron
Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
| | - Po-Wen Chiu
- Department
of Electrical Engineering, National Tsing
Hua University, Hsinchu 300044, Taiwan
| | - Yi-Cheng Chen
- Department
of Materials Science and Engineering, National
Tsing Hua University, Hsinchu 300044, Taiwan
| | - Ying-Hao Chu
- Department
of Materials Science and Engineering, National
Tsing Hua University, Hsinchu 300044, Taiwan
- Department
of Materials Science and Engineering, National
Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan
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Gao S, Wu X, Xiao X, Liu W, Huang K. Direct growth Bi2O 2Se nanosheets on SiO 2/Si substrate for high-performance and broadband photodetector. NANOTECHNOLOGY 2024; 35:125703. [PMID: 38096576 DOI: 10.1088/1361-6528/ad15ba] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/10/2023] [Accepted: 12/14/2023] [Indexed: 01/05/2024]
Abstract
Bi2O2Se, a newly emerging two-dimensional (2D) material, has attracted significant attention as a promising candidate for optoelectronics applications due to its exceptional air stability and high mobility. Generally, mica and SrTiO3substrates with lattice matching are commonly used for the growth of high-quality 2D Bi2O2Se. Although 2D Bi2O2Se grown on these insulating substrates can be transferred onto Si substrate to ensure compatibility with silicon-based semiconductor processes, this inevitably introduces defects and surface states that significantly compromise the performance of optoelectronic devices. Herein we employ Bi2Se3as the evaporation source and oxygen reaction to directly grow Bi2O2Se nanosheets on Si substrate through a conventional chemical vapor deposition method. The photodetector based on the Bi2O2Se nanosheets on Si substrate demonstrates outstanding optoelectronics performance with a responsivity of 379 A W-1, detectivity of 2.9 × 1010Jones, and rapid response time of 0.28 ms, respectively, with 532 nm illumination. Moreover, it also exhibits a broadband photodetection capability across the visible to near-infrared range (532-1300 nm). These results suggest that the promising potential of Bi2O2Se nanosheets for high-performance and broadband photodetector applications.
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Affiliation(s)
- Shengmei Gao
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Hunan, 411105, People's Republic of China
| | - Xiongqing Wu
- School of Physics and Optoelectronics, Xiangtan University, Hunan, 411105, People's Republic of China
| | - Xiaofei Xiao
- School of Physics and Optoelectronics, Xiangtan University, Hunan, 411105, People's Republic of China
| | - Wenliang Liu
- School of Physics and Optoelectronics, Xiangtan University, Hunan, 411105, People's Republic of China
| | - Kai Huang
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Hunan, 411105, People's Republic of China
- School of Physics and Optoelectronics, Xiangtan University, Hunan, 411105, People's Republic of China
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3
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Verma D, Chen TC, Liu B, Lai CS. Bi 2O 2Se-based CBRAM integrated artificial synapse. Heliyon 2023; 9:e22512. [PMID: 38107308 PMCID: PMC10724560 DOI: 10.1016/j.heliyon.2023.e22512] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/31/2023] [Revised: 10/30/2023] [Accepted: 11/14/2023] [Indexed: 12/19/2023] Open
Abstract
Integrating two-dimensional (2D) semiconducting materials into memristor structures has paved the way for emerging 2D materials to be employed in a vast field of memory applications. Bismuth oxyselenide (Bi2O2Se), a 2D material with high electron mobility, has attracted significant research interest owing to its great potential in various fields of advanced applications. Here, we explore the out-of-plane intrinsic switching behavior of few-layered Bi2O2Se via a cross point device for application in conductive bridge random access memory (CBRAM) and artificial synapses for neuromorphic computing. Via state-of-the-art methods, CVD-grown Bi2O2Se nanoplate is applied as a switching material (SM) in an Al/Cu/Bi2O2Se/Pd CBRAM structure. The device exhibits ∼90 consecutive DC cycles with a tight distribution of the SET/RESET voltages under a compliance current (CC) of 1 mA, a retention of over 10 ks, and multilevel switching characteristics showing four distinct states at Vread values of 0.1, 0.2, 0.25, and 0.3 V. Moreover, an artificial synapse is realized with potentiation and depression by modulating the conductance. The switching mechanism is explained via Cu migration through Bi2O2Se based on HRTEM analysis. The present structure shows potential for future integrated memory applications.
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Affiliation(s)
- Dharmendra Verma
- Department of Electronic Engineering, Chang Gung University, Taoyuan 33302, Taiwan
| | - Tsung-Cheng Chen
- Department of Electronic Engineering, Chang Gung University, Taoyuan 33302, Taiwan
| | - Bo Liu
- Faculty of Information Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, People’s Republic of China
| | - Chao-Sung Lai
- Department of Electronic Engineering, Chang Gung University, Taoyuan 33302, Taiwan
- Department of Nephrology, Chang Gung Memorial Hospital, Linkou 33302, Taiwan
- Department of Materials Engineering, Ming-Chi University of Technology, New Taipei City 24301, Taiwan
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4
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Lakhchaura S, Gokul MA, Rahman A. Ultrahigh responsivity of non-van der Waals Bi 2O 2Se photodetector. NANOTECHNOLOGY 2023; 35:075707. [PMID: 37949048 DOI: 10.1088/1361-6528/ad0bd3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2023] [Accepted: 11/10/2023] [Indexed: 11/12/2023]
Abstract
Bismuth oxyselenide has recently gained tremendous attention as a promising 2D material for next-generation electronic and optoelectronic devices due to its ultrahigh mobility, moderate bandgap, exceptional environmental stability, and presence of high-dielectric constant native oxide. In this study, we have synthesized single-crystalline nanosheets of Bismuth oxyselenide with thicknesses measuring below ten nanometers on Fluorophlogopite mica using an atmospheric pressure chemical vapor deposition system. We transferred as-grown samples to different substrates using a non-corrosive nail polish-assisted dry transfer method. Back-gated Bi2O2Se field effect transistors showed decent field effect mobility of 100 cm2V-1s-1. The optoelectronic property study revealed an ultrahigh responsivity of 1.16 × 106A W-1and a specific detectivity of 2.55 × 1013Jones. The samples also exhibited broadband photoresponse and gate-tunable photoresponse time. These results suggest that Bi2O2Se is an excellent candidate for future high-performance optoelectronic device applications.
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Affiliation(s)
- Suraj Lakhchaura
- Department of Physics, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra 411008, India
| | - M A Gokul
- Department of Physics, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra 411008, India
| | - Atikur Rahman
- Department of Physics, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra 411008, India
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Hong C, Oh S, Dat VK, Pak S, Cha S, Ko KH, Choi GM, Low T, Oh SH, Kim JH. Engineering electrode interfaces for telecom-band photodetection in MoS 2/Au heterostructures via sub-band light absorption. LIGHT, SCIENCE & APPLICATIONS 2023; 12:280. [PMID: 37996413 PMCID: PMC10667329 DOI: 10.1038/s41377-023-01308-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/04/2023] [Revised: 09/27/2023] [Accepted: 10/13/2023] [Indexed: 11/25/2023]
Abstract
Transition metal dichalcogenide (TMD) layered semiconductors possess immense potential in the design of photonic, electronic, optoelectronic, and sensor devices. However, the sub-bandgap light absorption of TMD in the range from near-infrared (NIR) to short-wavelength infrared (SWIR) is insufficient for applications beyond the bandgap limit. Herein, we report that the sub-bandgap photoresponse of MoS2/Au heterostructures can be robustly modulated by the electrode fabrication method employed. We observed up to 60% sub-bandgap absorption in the MoS2/Au heterostructure, which includes the hybridized interface, where the Au layer was applied via sputter deposition. The greatly enhanced absorption of sub-bandgap light is due to the planar cavity formed by MoS2 and Au; as such, the absorption spectrum can be tuned by altering the thickness of the MoS2 layer. Photocurrent in the SWIR wavelength range increases due to increased absorption, which means that broad wavelength detection from visible toward SWIR is possible. We also achieved rapid photoresponse (~150 µs) and high responsivity (17 mA W-1) at an excitation wavelength of 1550 nm. Our findings demonstrate a facile method for optical property modulation using metal electrode engineering and for realizing SWIR photodetection in wide-bandgap 2D materials.
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Affiliation(s)
- Chengyun Hong
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Saejin Oh
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Vu Khac Dat
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Sangyeon Pak
- School of Electronic and Electrical Engineering, Hongik University, Seoul, 04066, Republic of Korea
| | - SeungNam Cha
- Department of Physics, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Kyung-Hun Ko
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Gyung-Min Choi
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Tony Low
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA.
| | - Sang-Hyun Oh
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA.
| | - Ji-Hee Kim
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea.
- Department of Physics, Pusan National University, Busan, 46241, Republic of Korea.
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6
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Khan U, Nairan A, Khan K, Li S, Liu B, Gao J. Salt-Assisted Low-Temperature Growth of 2D Bi 2 O 2 Se with Controlled Thickness for Electronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206648. [PMID: 36538737 DOI: 10.1002/smll.202206648] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
Bi2 O2 Se is the most promising 2D material due to its semiconducting feature and high mobility, making it propitious channel material for high-performance electronics that demands highly crystalline Bi2 O2 Se at low-growth temperature. Here, a low-temperature salt-assisted chemical vapor deposition approach for growing single-domain Bi2 O2 Se on a millimeter scale with thicknesses of multilayer to monolayer is presented. Because of the advantage of thickness-dependent growth, systematical scrutiny of layer-dependent Raman spectroscopy of Bi2 O2 Se from monolayer to bulk is investigated, revealing a redshift of the A1g mode at 162.4 cm-1 . Moreover, the long-term environmental stability of ≈2.4 nm thick Bi2 O2 Se is confirmed after exposing the sample for 1.5 years to air. The backgated field effect transistor (FET) based on a few-layered Bi2 O2 Se flake represents decent carrier mobility (≈287 cm2 V-1 s-1 ) and an ON/OFF ratio of up to 107 . This report indicates a technique to grow large-domain thickness controlled Bi2 O2 Se single crystals for electronics.
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Affiliation(s)
- Usman Khan
- Institute of Functional Porous Materials, School of Materials Science and Engineering, Zhejiang Sci-Tech University, Hangzhou, 310018, P. R. China
- Zhejiang Provincial Innovation Center of Advanced Textile Technology, Shaoxing, 312000, P. R. China
| | - Adeela Nairan
- Institute of Functional Porous Materials, School of Materials Science and Engineering, Zhejiang Sci-Tech University, Hangzhou, 310018, P. R. China
- Zhejiang Provincial Innovation Center of Advanced Textile Technology, Shaoxing, 312000, P. R. China
| | - Karim Khan
- School of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan, 523808, P. R. China
| | - Sean Li
- School of Materials Science and Engineering, The University of New South Wales, Sydney, 2052, Australia
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Junkuo Gao
- Institute of Functional Porous Materials, School of Materials Science and Engineering, Zhejiang Sci-Tech University, Hangzhou, 310018, P. R. China
- Zhejiang Provincial Innovation Center of Advanced Textile Technology, Shaoxing, 312000, P. R. China
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7
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Zou X, Sun Y, Wang C. Horizontally Self-Standing Growth of Bi 2 O 2 Se Achieving Optimal Optoelectric Properties. SMALL METHODS 2022; 6:e2200347. [PMID: 35676223 DOI: 10.1002/smtd.202200347] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2022] [Revised: 05/10/2022] [Indexed: 06/15/2023]
Abstract
Air-stable 2D Bi2 O2 Se material with high carrier mobility appears as a promising semiconductor platform for future micro/nanoelectronics and optoelectronics. Like most 2D materials, Bi2 O2 Se 2D nanostructures normally form on atomically flat mica substrates, in which undesirable defects and structural damage from the subsequent transfer process will largely degrade their photoelectronic performance. Here, a new synthesis route involving successive kinetic and thermodynamic processes is proposed to achieve horizontally self-standing Bi2 O2 Se nanostructures on SiO2 /Si substrates. Fewer defects and avoidance of transfer procedure involving corrosive solvents ensure the integrity of the intrinsic lattice and band structures in Bi2 O2 Se nanostructures. In contrast to flat structures grown on mica, it displays reduced dark current and improved photoresponse performance (on-off ratio, photoresponsivity, response time, and detectivity). These results indicate a new potential in high-quality 2D electronic nanostructures with optimal optoelectronic functionality.
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Affiliation(s)
- Xiaobin Zou
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou, 510275, P. R. China
| | - Yong Sun
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou, 510275, P. R. China
| | - Chengxin Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou, 510275, P. R. China
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8
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Vrushabendrakumar D, Rajashekhar H, Riddell S, Kalra AP, Alam KM, Shankar K. Synthesis, characterization, and visible light photocatalytic activity of solution-processed free-standing 2D Bi 2O 2Se nanosheets. NANOTECHNOLOGY 2021; 32:485602. [PMID: 34298524 DOI: 10.1088/1361-6528/ac1753] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2021] [Accepted: 07/23/2021] [Indexed: 06/13/2023]
Abstract
Owing to their unique structural and electronic properties such as layered structure with tuneable bandgap and high electron mobility, 2D materials have emerged as promising candidates for photocatalysis. Recently, bismuth oxyselenide (Bi2O2Se), a member of bismuth oxychalcogenide's family has shown great potential in high-speed field-effect transistors, infrared photodetectors, ferroelectric devices, and electrochemical sensors. However, the potential of Bi2O2Se in photocatalysis has not yet been explored. In the current work, Bi2O2Se nanosheets with an average size of ∼170 nm and a lattice strain of 0.01 were synthesized at room temperature using a facile solution-processed method and the as-synthesized material was investigated with various characterization techniques such as x-ray diffraction, FE-SEM, UV-vis spectroscopy. The bandgap for the indirect transition in Bi2O2Se nanosheets was estimated to be 1.19 eV. Further, the visible-light-driven photocatalytic degradation of methylene blue (MB) dye using Bi2O2Se as a photocatalyst is presented. The photocatalytic experiments demonstrate the promising photocatalytic ability of Bi2O2Se as it leads to 25.06% degradation of MB within 80 min of light illumination. The effect of active species trapping agents (carrier and radical scavengers) on photocatalytic activity is also presented and discussed.
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Affiliation(s)
- Damini Vrushabendrakumar
- Department of Electrical and Computer Engineering, University of Alberta, Edmonton, T6G 1H9, Canada
| | - Harshitha Rajashekhar
- Department of Electrical and Computer Engineering, University of Alberta, Edmonton, T6G 1H9, Canada
| | - Saralyn Riddell
- Department of Electrical and Computer Engineering, University of Alberta, Edmonton, T6G 1H9, Canada
| | - Aarat P Kalra
- Department of Electrical and Computer Engineering, University of Alberta, Edmonton, T6G 1H9, Canada
| | - Kazi M Alam
- Department of Electrical and Computer Engineering, University of Alberta, Edmonton, T6G 1H9, Canada
- Nanotechnology Research Centre, National Research Council of Canada, Edmonton, Canada
| | - Karthik Shankar
- Department of Electrical and Computer Engineering, University of Alberta, Edmonton, T6G 1H9, Canada
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9
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Kang M, Chai HJ, Jeong HB, Park C, Jung IY, Park E, Çiçek MM, Lee I, Bae BS, Durgun E, Kwak JY, Song S, Choi SY, Jeong HY, Kang K. Low-Temperature and High-Quality Growth of Bi 2O 2Se Layered Semiconductors via Cracking Metal-Organic Chemical Vapor Deposition. ACS NANO 2021; 15:8715-8723. [PMID: 33973765 DOI: 10.1021/acsnano.1c00811] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Ternary metal-oxy-chalcogenides are emerging as next-generation layered semiconductors beyond binary metal-chalcogenides (i.e., MoS2). Among ternary metal-oxy-chalcogenides, especially Bi2O2Se has been demonstrated in field-effect transistors and photodetectors, exhibiting ultrahigh performance with robust air stability. The growth method for Bi2O2Se that has been reported so far is a powder sublimation based chemical vapor deposition. The first step for pursuing the practical application of Bi2O2Se as a semiconductor material is developing a gas-phase growth process. Here, we report a cracking metal-organic chemical vapor deposition (c-MOCVD) for the gas-phase growth of Bi2O2Se. The resulting Bi2O2Se films at very low growth temperature (∼300 °C) show single-crystalline quality. By taking advantage of the gas-phase growth, the precise phase control was demonstrated by modulating the partial pressure of each precursor. In addition, c-MOCVD-grown Bi2O2Se exhibits outstanding electrical and optoelectronic performance at room temperature without passivation, including maximum electron mobility of 127 cm2/(V·s) and photoresponsivity of 45134 A/W.
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Affiliation(s)
- Minsoo Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Hyun-Jun Chai
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Han Beom Jeong
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Cheolmin Park
- School of Electrical Engineering, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - In-Young Jung
- Department of Physics, Hanyang University, Seoul 04763, Republic of Korea
- Operando Methodology and Measurement Team, Korea Research Institute of Standards & Science (KRISS), Daejeon 34113, Republic of Korea
| | - Eunpyo Park
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Mert Miraç Çiçek
- Department of Engineering Physics, Faculty of Engineering, Ankara University, Ankara 06100, Turkey
- UNAM-National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, Turkey
| | - Injun Lee
- Wearable Platform Materials Technology Center (WMC), Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Byeong-Soo Bae
- Wearable Platform Materials Technology Center (WMC), Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Engin Durgun
- UNAM-National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, Turkey
| | - Joon Young Kwak
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Seungwoo Song
- Operando Methodology and Measurement Team, Korea Research Institute of Standards & Science (KRISS), Daejeon 34113, Republic of Korea
| | - Sung-Yool Choi
- School of Electrical Engineering, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Hu Young Jeong
- UNIST Central Research Facilities (UCRF) and Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
- Advanced Nanosensor Research Center, KI Nanocentury, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
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10
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11
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Chitara B, Limbu TB, Orlando JD, Tang Y, Yan F. Ultrathin Bi 2O 2S nanosheet near-infrared photodetectors. NANOSCALE 2020; 12:16285-16291. [PMID: 32720665 DOI: 10.1039/d0nr02991b] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recently, a zipper two-dimensional (2D) material Bi2O2Se belonging to the layered bismuth oxychalcogenide (Bi2O2X: X = S, Se, Te) family, has emerged as an alternate candidate to van der Waals 2D materials for high-performance electronic and optoelectronic applications. This hints towards exploring the other members of the Bi2O2X family for their true potential and bismuth oxysulfide (Bi2O2S) could be the next member for such applications. Here, we demonstrate for the first time, the scalable room-temperature chemical synthesis and near-infrared (NIR) photodetection of ultrathin Bi2O2S nanosheets. The thickness of the freestanding nanosheets was around 2-3 nm with a lateral dimension of ∼80-100 nm. A solution-processed NIR photodetector was fabricated from ultrathin Bi2O2S nanosheets. The photodetector showed high performance, under 785 nm laser illumination, with a photoresponsivity of 4 A W-1, an external quantum efficiency of 630%, and a normalized photocurrent-to-dark-current ratio of 1.3 × 1010 per watt with a fast response time of 100 ms. Taken together, the findings suggest that Bi2O2S nanosheets could be a promising alternative 2D material for next-generation large-area flexible electronic and optoelectronic devices.
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Affiliation(s)
- Basant Chitara
- Department of Chemistry and Biochemistry, North Carolina Central University, Durham, NC 27707, USA.
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