Light-activated Multilevel Resistive Switching Storage in Pt/Cs2AgBiBr6/ITO/Glass Devices

Unraveling Defect-Mediated Enhancement of Transient Photoconductivity and Slower Carrier's Mobility Decay in Cu-Doped Cs2AgBiBr6 Nanocrystals Using Ultrafast Pump-Probe Spectroscopy

Lead-free double perovskite nanocrystals (A2B'(III)B″(I)X6 NCs) address the instability and toxicity concerns of lead-based counterparts, but their device performance is limited by subpar absorption and unexplored carrier dynamics. Impurity ion doping offers a route to tune electrical conductivity and charge carrier transport. Herein, we synthesized Cu-doped Cs2AgBiBr6 (CABB) nanocrystals using a hot-injection approach and investigated the charge carrier's dynamics through ultrafast pump-probe spectroscopy. Copper introduction into the CABB lattice enhanced absorption in the near-infrared region and introduced sub-band gap defect states in CABB NCs. The transient absorption study revealed a faster bleach decay with increased copper doping, as a result of charge transfer from the conduction band to copper defect states. Also, an optical pump terahertz probe study displays higher photoconductivity and mobility in Cu-doped CABB NCs. Slower mobility decay in Cu-doped systems was attributed to the charge carrier's entrapment at the defect state. These findings suggest that copper-doped CABB is a superior contender for optoelectronic applications over conventional CABB.

The Role of Polymers in Halide Perovskite Resistive Switching Devices

Currently, halide perovskites (HPs) are gaining traction in multiple applications, such as photovoltaics and resistive switching (RS) devices. In RS devices, the high electrical conductivity, tunable bandgap, good stability, and low-cost synthesis and processing make HPs promising as active layers. Additionally, the use of polymers in improving the RS properties of lead (Pb) and Pb-free HP devices was described in several recent reports. Thus, this review explored the in-depth role of polymers in optimizing HP RS devices. In this review, the effect of polymers on the ON/OFF ratio, retention, and endurance properties was successfully investigated. The polymers were discovered to be commonly utilized as passivation layers, charge transfer enhancement, and composite materials. Hence, further HP RS improvement integrated with polymers revealed promising approaches to delivering efficient memory devices. Based on the review, detailed insights into the significance of polymers in producing high-performance RS device technology were effectively understood.

Improved Performance of the Al2O3-Protected HfO2-TiO2 Base Layer with a Self-Assembled CH3NH3PbI3 Heterostructure for Extremely Low Operating Voltage and Stable Filament Formation in Nonvolatile Resistive Switching Memory

Herein, we report intriguing observations of an extremely stable nonvolatile bipolar resistive switching (NVBRS) memory device fabricated using HfO₂-TiO₂ topologically protected by Al₂O₃ as a stacked base layer for a CH₃NH₃PbI₃ (MAPI) electrolyte layer sandwiched between Ag and fluorine-doped tin oxide (FTO) electrodes. MAPI has been successfully synthesized by a rapid microwave-solvothermal (MW-ST) method within 10 min at 120 °C without requiring any inert gas atmosphere using low-cost precursors and solvents. Subsequently, MAPI powders are dissolved in aprotic solvents (DMF/DMSO = 8:2), and a spin-coated thin film is allowed to recrystallize upon annealing at 120 °C via a solution-based nanoscale self-assembly process. The fabricated memory device with the Ag/MAPI/Al₂O₃/TiO₂-HfO₂/FTO configuration shows an enhanced resistance ratio of 10⁵ for >10⁴ s at an extremely lower operating voltage (SET +0.2 V, RESET -0.2 V) when compared to that of the pristine MAPI device (±1 V, 10², 10⁴ s). We show that the memory device also exhibits a remarkable endurance of ≥3500 cycles due to the Al₂O₃ robust coating on the HfO₂-TiO₂ layer, facilitating prompt heterojunction formation. Thus, the adopted innovative strategies to prepare structurally and optically stable (∼1.5 years) MAPI under high-humid conditions could offer enhanced performance of NVBRS memory devices for medical, security, internet of things (IoT), and artificial intelligence (AI) applications.

Recent Advances in Halide Perovskite Resistive Switching Memory Devices: A Transformation from Lead-Based to Lead-Free Perovskites

Due to their remarkable electrical and light absorption characteristics, hybrid organic-inorganic perovskites have recently gained popularity in several applications such as optoelectronics, lasers, and light-emitting diodes. Through this, there has recently been an increase in the use of halide perovskites (HPs) in resistive switching (RS) devices. However, lead-based (Pb-based) perovskites are notorious for being unstable and harmful to the environment. As a result, lead-free (Pb-free) perovskite alternatives are being investigated in achieving the long-term and sustainable use of RS devices. This work describes the characteristics of Pb-based and Pb-free perovskite RS devices. It also presents the recent advancements of HP RS devices, including the selection strategies of perovskite structures. In terms of resistive qualities, the directions of both HPs appear to be identical. Following that, the possible impact of switching from Pb-based to Pb-free HPs is examined to determine the requirement in RS devices. Finally, this work discusses the opportunities and challenges of HP RS devices in creating a stable, efficient, and sustainable memory storage technology.

Water-Soluble Polythiophene-Conjugated Polyelectrolyte-Based Memristors for Transient Electronics

The key to protect sensitive information stored in electronic memory devices from disclosure is to develop transient electronic devices that are capable of being destroyed quickly in an emergency. By using a highly water-soluble polythiophene-conjugated polyelectrolyte PTT-NMI⁺Br^- as an active material, which was synthesized by the reaction of poly[thiophene-alt-4,4-bis(6-bromohexyl)-4H-cyclopenta(1,2-b:5,4-b')dithiophene] with N-methylimidazole, a flexible electronic device, Al/PTT-NMI⁺Br^-/ITO-coated PET (ITO: indium tin oxide; PET: polyethylene terephthalate), is successfully fabricated. This device shows a typical nonvolatile rewritable resistive random access memory (RRAM) effect at a sweep voltage range of ±3 V and a history-dependent memristive switching performance at a small sweep voltage range of ±1 V. Both the learning/memorizing functions and the synaptic potentiation/depression of biological systems have been emulated. The switching mechanism for the PTT-NMI⁺Br^--based electronic device may be highly associated with ion migration under bias. Once water is added to this device, it will be destructed rapidly within 20 s due to the dissolution of the active layer. This device is not only a typical transient device but can also be used for constructing conventional memristors with long-term stability after electronic packaging. Furthermore, the soluble active layer in the device can be easily recycled from its aqueous solution and reused for fabricating new transient memristors. This work offers a train of new thoughts for designing and constructing a neuromorphic computing system that can be quickly destroyed with water in the near future.

Correction to: Light-Activated Multilevel Resistive Switching Storage in Pt/Cs2AgBiBr6/ITO/Glass Devices

An amendment to this paper has been published and can be accessed via a link at the top of the paper.