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Shahzadi U, Yang D, Fatima K, Wang F. Band Gap Alteration of Halide Mixing in Hybrid Perovskites: A First-Principles Study with Statistical Analysis. J Phys Chem A 2024; 128:1173-1180. [PMID: 38321941 DOI: 10.1021/acs.jpca.3c08076] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/08/2024]
Abstract
Despite numerous studies on the band gap of three-dimensional halide perovskites using the first-principles calculations, there are still significant discrepancies between theoretical and experimental values. Various solutions have been proposed, such as employing a system-specific hybrid functional with varying degrees of exact exchange and explicitly incorporating spin-orbit coupling effects. Our research involved a comprehensive investigation of three typical lead-containing three-dimensional perovskites MAPbI3, MAPbBr3, and MAPbCl3 (MA = CH3NH3). Through a statistical analysis comparing mean absolute error (MAE) with experimental results, we demonstrated that the nonlocal van der Waals (vdW) density functional corrections (i.e., optB86b) yielded the most approximate lattice parameters in comparison to experimental values. Furthermore, based on these lattice parameters, the HSE06 hybrid functional is the optimal estimation of the band gap among all the options. Moreover, we investigated three sets of mixed three-dimensional halide perovskites by varying the halide component. This exploration contributes to the identification of MAPb(Br0.333I0.667)3 and MAPb(Cl0.333I0.667)3 as exhibiting the smallest band gap of 1.315 (1.867) eV and 1.313 (1.885) eV for PBE (HSE06), respectively. These band gaps were determined using the HSE06 method with the optimized lattice by PBE considering the optB86b corrections. The approach employed in this work produced a band gap trend closely aligned with experimental observations, underscoring the importance of adopting a reliable and material-independent computational strategy when screening new halide perovskite materials for optoelectronic applications.
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Affiliation(s)
- Urooj Shahzadi
- International Laboratory for Quantum Functional Materials of Henan, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001,China
| | - Dongwen Yang
- International Laboratory for Quantum Functional Materials of Henan, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001,China
| | - Kaneez Fatima
- International Laboratory for Quantum Functional Materials of Henan, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001,China
| | - Fei Wang
- International Laboratory for Quantum Functional Materials of Henan, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001,China
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Duan S, Sun Q, Liu G, Deng J, Meng X, Shen B, Hu D, Kang B, Silva SRP. Synergistic Surface Defect Passivation of Ionic Liquids for Efficient and Stable MAPbI 3-Based Inverted Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2023; 15:46483-46492. [PMID: 37748040 DOI: 10.1021/acsami.3c08827] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/27/2023]
Abstract
Organic-inorganic hybrid perovskite solar cells are fabricated using polycrystalline perovskite thin films, which possess high densities of point and surface defects. The surface defects of perovskite thin films are the key factors that affect the device performance. Therefore, the reduction of harmful defects is the primary task for improving device performance. Therefore, in this study, high-quality perovskite thin films are prepared using an ionic liquid, dithiocarbamate diethylamine (DADA), to passivate the interface. The electron-rich sulfur atom in the DADA molecule chelates with the uncoordinated lead ion in the perovskite films, and the diethylammonium cation forms a hydrogen bond with the free iodine ion, which further improves the passivation. The synergistic passivation and improved morphology of the perovskite thin films substantially reduce the number of charged defects on the film surface and prolong the carrier lifetime. In addition, the DADA surface treatment increases the work function of the perovskite film, which is beneficial for carrier transport. Under standard solar-lighting conditions, the power conversion efficiency (PCE) of the device increases from 19.13 to 21.36%, and the fill factor is as high as 83.17%. Owing to both the hydrophobicity of DADA molecules and the passivation of ion defects, the PCE of the device remains above 80%, even for the device stored for 500 h in air at a relative humidity of 65%, and the device stability is substantially improved.
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Affiliation(s)
- Shaocong Duan
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Qing Sun
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Gang Liu
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Jianguo Deng
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Xiangxin Meng
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Bo Shen
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Die Hu
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Bonan Kang
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - S Ravi P Silva
- Nanoelectronics Centre, Advanced Technology Institute, University of Surrey, Guildford, Surrey GU2 7XH, U.K
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