Electrical Characterization of Metal-Molecule-Silicon Junctions

Fabrication of reproducible, integration-compatible hybrid molecular/si electronics

Reproducible molecular junctions can be integrated within standard CMOS technology. Metal-molecule-semiconductor junctions are fabricated by direct Si-C binding of hexadecane or methyl-styrene onto oxide-free H-Si(111) surfaces, with the lateral size of the junctions defined by an etched SiO2 well and with evaporated Pb as the top contact. The current density, J, is highly reproducible with a standard deviation in log(J) of 0.2 over a junction diameter change from 3 to 100 μm. Reproducibility over such a large range indicates that transport is truly across the molecules and does not result from artifacts like edge effects or defects in the molecular monolayer. Device fabrication is tested for two n-Si doping levels. With highly doped Si, transport is dominated by tunneling and reveals sharp conductance onsets at room temperature. Using the temperature dependence of current across medium-doped n-Si, the molecular tunneling barrier can be separated from the Si-Schottky one, which is a 0.47 eV, in agreement with the molecular-modified surface dipole and quite different from the bare Si-H junction. This indicates that Pb evaporation does not cause significant chemical changes to the molecules. The ability to manufacture reliable devices constitutes important progress toward possible future hybrid Si-based molecular electronics.

Graphene-metal interface: two-terminal resistance of low-mobility graphene in high magnetic fields

The two-terminal magnetotransport of a single graphene layer was investigated up to a field of 55 T. The dependence of the electron transmission probability at the organo-metallic interface between the graphene and the metal electrodes was studied as a function of filling factor and electron density. A resistance-plateau spanning several tens of tesla width was observed. We argue that this plateau originates from an augmented sublattice spin-splitting due to the high surface-impurity concentration of the graphene layer. At electron densities close to the Dirac point, fingerprints of a thermally activated energy gap were observed.

The study of charge transport through organic thin films: mechanism, tools and applications

In this paper, we discuss the current state of organic and molecular-scale electronics, some experimental methods used to characterize charge transport through molecular junctions and some theoretical models (superexchange and barrier tunnelling models) used to explain experimental results. Junctions incorporating self-assembled monolayers of organic molecules - and, in particular, junctions with mercury-drop electrodes - are described in detail, as are the issues of irreproducibility associated with such junctions (due, in part, to defects at the metal-molecule interface).

UHV STM I(V) and XPS studies of aryl diazonium molecules assembled on Si(111)

Molecular layers formed from 4-trifluoromethylbenzenediazonium tetrafluoroborate and 4-Methylbenzenediazonium tetrafluoroborate have been assembled on H-passivated Si(111) and studied by UHV STM and XPS. STM imaging shows well-developed Si(111) step edges and terraces both on Si(111):H and Si(111) substrates covered with a molecular layer. STM I(V) data acquired at different tip-substrate separations reveals a factor of approximately 10 enhancement in current for positive bias voltage when current flows through the 4-trifluoromethyl molecule when compared to the 4-methyl variant. The observed current enhancement in I(V) can be understood by comparing the projected density of states of the two molecule-Si systems calculated using a density functional theory local density approximation after geometry optimization was performed via the conjugate gradient method. XPS data independently confirm that H-passivated Si(111) remains oxygen free for short exposures to ambient conditions and provide evidence that the molecules chemically react with the silicon surface.