Kachian JS, Tannaci J, Wright RJ, Tilley TD, Bent SF. Disulfide passivation of the Ge(100)-2 × 1 surface.
LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2011;
27:179-186. [PMID:
21141841 DOI:
10.1021/la103614f]
[Citation(s) in RCA: 7] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
Understanding the bonding of sulfur at the germanium surface is important to developing good passivation routes for germanium-based electronic devices. The adsorption behavior of ethyl disulfide (EDS) and 1,8-naphthalene disulfide (NDS) at the Ge(100)-2 × 1 surface has been studied under ultrahigh vacuum conditions to investigate both their fundamental reactivity and their effectiveness as passivants of this surface. X-ray photoelectron spectroscopy, multiple internal reflection-infrared spectroscopy, and density functional theory results indicate that both molecules adsorb via S-S dissociation at room temperature. Upon exposure to ambient air, the thiolate adlayer remains intact for both EDS- and NDS-functionalized surfaces, indicating the stability of this surface attachment. Although both systems resist oxidation compared to the bare Ge(100)-2 × 1 surface, the Ge substrate is significantly oxidized in all cases (17-57% relative to the control), with the NDS-passivated surface undergoing up to two times more oxidation than the EDS-passivated surface at the longest air exposure times studied. The difference in passivation capability is attributed to the difference in surface coverage on Ge(100)-2 × 1, where EDS adsorption leads to a saturation coverage 17% higher than that for NDS/Ge(100)-2 × 1.
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