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Quarta D, Tobaldi DM, Giansante C. Prospective Chalcohalide Perovskites: Pursuing (and Failing) the Synthesis of CsBiSCl 2 Nanocrystals. J Phys Chem Lett 2024; 15:7645-7651. [PMID: 39036972 DOI: 10.1021/acs.jpclett.4c01656] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/23/2024]
Abstract
Heavy pnictogen chalcohalides are often termed lead-free, perovskite-inspired materials. Despite theoretical predictions, incontrovertible experimental demonstrations of heavy pnictogen chalcohalides adopting a perovskite structure are lacking. Here we report our attempts to prepare CsBiSCl2 adopting a perovskite structure as colloidal nanocrystals. Synthesis of nanoscale materials can indeed rely on fast, nonequilibrium reactions and on large, eventually thermodynamically favorable surface energies, leading to the possibility of stabilizing kinetically trapped or metastable phases. However, we obtained no CsBiSCl2, but a mixture of nanocrystals of secondary phases, namely Cs3BiCl6 submicrometric polyhedra, Bi2S3 nanoscopic rods, and Cs3Bi2Cl9 nanoscopic dots, whose low polydispersity enabled an effective separation via size/shape selective precipitation. This work confirms that heavy pnictogen chalcohalides are hardly prone to adopting a perovskite structure. Nevertheless, chemistry at the nanoscale offers multiple possibilities for overcoming phase segregation and pursuing the synthesis of prospective mixed anion compound semiconductors.
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Affiliation(s)
- Danila Quarta
- Consiglio Nazionale delle Ricerche, Istituto di Nanotecnologia - CNR NANOTEC, Via Monteroni, 73100 Lecce, Italy
| | - David Maria Tobaldi
- Consiglio Nazionale delle Ricerche, Istituto di Nanotecnologia - CNR NANOTEC, Via Monteroni, 73100 Lecce, Italy
| | - Carlo Giansante
- Consiglio Nazionale delle Ricerche, Istituto di Nanotecnologia - CNR NANOTEC, Via Monteroni, 73100 Lecce, Italy
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Vincent Mercy E, Srinivasan D, Marasamy L. Emerging BaZrS 3 and Ba(Zr,Ti)S 3 Chalcogenide Perovskite Solar Cells: A Numerical Approach Toward Device Engineering and Unlocking Efficiency. ACS OMEGA 2024; 9:4359-4376. [PMID: 38313502 PMCID: PMC10832013 DOI: 10.1021/acsomega.3c06627] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/03/2023] [Revised: 12/18/2023] [Accepted: 12/22/2023] [Indexed: 02/06/2024]
Abstract
BaZrS3 chalcogenide perovskites have emerged as a promising absorber due to their exceptional properties. However, there are no experimental reports on the applicability of BaZrS3 in photovoltaics. Thus, theoretical knowledge of device structure engineering is essential for its successful fabrication. In this regard, we have proposed various BaZrS3 device configurations by altering 12 electron transport layers (ETLs) in combination with 13 hole transport layers (HTLs) using SCAPS-1D, wherein a total of 782 devices are simulated by tuning the thickness, carrier concentration, and defect density of BaZrS3, ETLs, and HTLs. Interestingly, the absorber's thickness optimization enhanced the absorption in the device by 2.31 times, elevating the generation rate of charge carriers, while the increase in its carrier concentration boosted the built-in potential from 0.8 to 1.68 V, reducing the accumulation of charge carriers at the interfaces. Notably, on further optimization of ETL and HTL combinations, the best power conversion efficiency (PCE) of 28.08% is achieved for FTO/ZrS2/BaZrS3/SnS/Au, occurring due to the suppressed barrier height of 0.1 eV at the ZrS2/BaZrS3 interface and degenerate behavior of SnS, which increased charge carrier transportation and conductivity of the devices. Upon optimizing the work function, an ohmic contact is achieved for Pt, boosting the PCE to 28.17%. Finally, the impact of Ti alloying on BaZrS3 properties is examined on the champion FTO/ZrS2/BaZrS3/SnS/Pt device where the maximum PCE of 32.58% is obtained for Ba(Zr0.96,Ti0.04)S3 at a thickness of 700 nm due to extended absorption in the NIR region. Thus, this work opens doors to researchers for the experimental realization of high PCE in BaZrS3 devices.
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Affiliation(s)
- Eupsy
Navis Vincent Mercy
- Facultad de Química,
Materiales-Energía, Universidad Autónoma
de Querétaro, Santiago
de Querétaro, Querétaro C.P. 76010, México
| | - Dhineshkumar Srinivasan
- Facultad de Química,
Materiales-Energía, Universidad Autónoma
de Querétaro, Santiago
de Querétaro, Querétaro C.P. 76010, México
| | - Latha Marasamy
- Facultad de Química,
Materiales-Energía, Universidad Autónoma
de Querétaro, Santiago
de Querétaro, Querétaro C.P. 76010, México
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Ghorpade UV, Suryawanshi MP, Green MA, Wu T, Hao X, Ryan KM. Emerging Chalcohalide Materials for Energy Applications. Chem Rev 2022; 123:327-378. [PMID: 36410039 PMCID: PMC9837823 DOI: 10.1021/acs.chemrev.2c00422] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
Abstract
Semiconductors with multiple anions currently provide a new materials platform from which improved functionality emerges, posing new challenges and opportunities in material science. This review has endeavored to emphasize the versatility of the emerging family of semiconductors consisting of mixed chalcogen and halogen anions, known as "chalcohalides". As they are multifunctional, these materials are of general interest to the wider research community, ranging from theoretical/computational scientists to experimental materials scientists. This review provides a comprehensive overview of the development of emerging Bi- and Sb-based as well as a new Cu, Sn, Pb, Ag, and hybrid organic-inorganic perovskite-based chalcohalides. We first highlight the high-throughput computational techniques to design and develop these chalcohalide materials. We then proceed to discuss their optoelectronic properties, band structures, stability, and structural chemistry employing theoretical and experimental underpinning toward high-performance devices. Next, we present an overview of recent advancements in the synthesis and their wide range of applications in energy conversion and storage devices. Finally, we conclude the review by outlining the impediments and important aspects in this field as well as offering perspectives on future research directions to further promote the development of chalcohalide materials in practical applications in the future.
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Affiliation(s)
- Uma V. Ghorpade
- Department
of Chemical Sciences and Bernal Institute, University of Limerick, Limerick V94 T9PX, Ireland,School
of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Mahesh P. Suryawanshi
- School
of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia,
| | - Martin A. Green
- School
of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Tom Wu
- School
of Materials Science and Engineering, University
of New South Wales, Sydney, New South Wales 2052, Australia
| | - Xiaojing Hao
- School
of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Kevin M. Ryan
- Department
of Chemical Sciences and Bernal Institute, University of Limerick, Limerick V94 T9PX, Ireland
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Adjogri SJ, Meyer EL. Chalcogenide Perovskites and Perovskite-Based Chalcohalide as Photoabsorbers: A Study of Their Properties, and Potential Photovoltaic Applications. MATERIALS (BASEL, SWITZERLAND) 2021; 14:7857. [PMID: 34947450 PMCID: PMC8707488 DOI: 10.3390/ma14247857] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/03/2021] [Revised: 09/04/2021] [Accepted: 09/08/2021] [Indexed: 12/03/2022]
Abstract
In 2015, a class of unconventional semiconductors, Chalcogenide perovskites, remained projected as possible solar cell materials. The MAPbI3 hybrid lead iodide perovskite has been considered the best so far, and due to its toxicity, the search for potential alternatives was important. As a result, chalcogenide perovskites and perovskite-based chalcohalide have recently been considered options and potential thin-film light absorbers for photovoltaic applications. For the synthesis of novel hybrid perovskites, dimensionality tailoring and compositional substitution methods have been used widely. The study focuses on the optoelectronic properties of chalcogenide perovskites and perovskite-based chalcohalide as possibilities for future photovoltaic applications.
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Affiliation(s)
- Shadrack J. Adjogri
- Fort Hare Institute of Technology, University of Fort Hare, Alice 5700, South Africa;
- Department of Chemistry, University of Fort Hare, Alice 5700, South Africa
| | - Edson L. Meyer
- Fort Hare Institute of Technology, University of Fort Hare, Alice 5700, South Africa;
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Attique S, Ali N, Ali S, Khatoon R, Li N, Khesro A, Rauf S, Yang S, Wu H. A Potential Checkmate to Lead: Bismuth in Organometal Halide Perovskites, Structure, Properties, and Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:1903143. [PMID: 32670745 PMCID: PMC7341095 DOI: 10.1002/advs.201903143] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/04/2019] [Revised: 01/30/2020] [Indexed: 06/11/2023]
Abstract
The remarkable optoelectronic properties and considerable performance of the organo lead-halide perovskites (PVKs) in various optoelectronic applications grasp tremendous scientific attention. However, the existence of the toxic lead in these compounds is threatening human health and remains a major concern in the way of their commercialization. To address this issue, numerous nontoxic alternatives have been reported. Among these alternatives, bismuth-based PVKs have emerged as a promising substitute because of similar optoelectronic properties and extended environmental stability. This work communicates briefly about the possible lead-alternatives and explores bismuth-based perovskites comprehensively, in terms of their structures, optoelectronic properties, and applications. A brief description of lead-toxification is provided and the possible Pb-alternatives from the periodic table are scrutinized. Then, the classification and crystal structures of various Bi-based perovskites are elaborated on. Detailed optoelectronic properties of Bi-based perovskites are also described and their optoelectronic applications are abridged. The overall photovoltaic applications along with device characteristics (i.e., V OC, J SC, fill factor, FF, and power conversion efficiency, PCE), fabrication method, device architecture, and operational stability are also summarized. Finally, a conclusion is drawn where a brief outlook highlights the challenges that hamper the future progress of Bi-based optoelectronic devices and suggestions for future directions are provided.
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Affiliation(s)
- Sanam Attique
- Institute for Composites Science and Innovation (InCSI)School of Material Science and EngineeringZhejiang UniversityHangzhou310027P. R. China
| | - Nasir Ali
- Zhejiang Province Key Laboratory of Quantum Technology and Devices and Department of PhysicsState Key Laboratory for Silicon MaterialsZhejiang UniversityHangzhou310027P. R. China
| | - Shahid Ali
- Materials Research LaboratoryDepartment of PhysicsUniversity of PeshawarPeshawar25120Pakistan
| | - Rabia Khatoon
- State Key Laboratory of Silicon MaterialsSchool of Materials Science and EngineeringZhejiang UniversityHangzhou310027P. R. China
| | - Na Li
- Department of Chemistry and Chemical EngineeringSchool of Chemistry and Biological EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
| | - Amir Khesro
- Department of PhysicsAbdul Wali Khan UniversityMardan23200Pakistan
| | - Sajid Rauf
- Hubei Collaborative Innovation Centre for Advanced Organic Chemical MaterialsFaculty of Physics and Electronic ScienceHubei UniversityWuhanHubei430062P. R. China
| | - Shikuan Yang
- Institute for Composites Science and Innovation (InCSI)School of Material Science and EngineeringZhejiang UniversityHangzhou310027P. R. China
| | - Huizhen Wu
- Zhejiang Province Key Laboratory of Quantum Technology and Devices and Department of PhysicsState Key Laboratory for Silicon MaterialsZhejiang UniversityHangzhou310027P. R. China
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