Aerosol Doping System for Microscale Seamless p-n Patterning of Carbon Nanotube Films

Carbon nanotube (CNT) films are extensively researched as a promising material for wearable thermoelectric generators (TEGs) owing to their good flexibility and high thermoelectric conversion ability. Miniaturizing a pair of p- and n-type thermocouples and increasing the number of repeating elements can effectively increase the power of TEGs. However, conventional p-n patterning methods, such as dipping and printing, have a coarse resolution at the submillimeter level, thereby limiting the miniaturization rate. This study developed an aerosol doping system as a fine n-doping method. A dopant aerosol with a <3 μm diameter was formed through ultrasonic nebulization and air separation, while n-doping was achieved by exposing the CNT film to the dopant aerosol. Microscale p-n patterning of 1 μm was achieved through exposure using small-sized aerosols at an exceptionally slow rate of 3 Å/min. This resolution is 100 times higher than those of conventional p-n patterning methods. The developed aerosol doping system for CNTs can also be used on organic semiconductor materials, such as PEDOT/PSS and perovskite materials. Therefore, it has the potential to significantly impact the realization of Internet of Things (IoT) terminals, such as flexible TEGs, transistors, and solar cells.

Outstanding Robust Photo- and Thermo-Electric Applications with Stabilized n-Doped Carbon Nanotubes by Parylene Coating

Stabilization techniques for n-doped carbon nanotubes (CNTs) are essential for the practical use of CNT devices. However, none of the reported n-dopants have sufficient robustness in a practical environment. Herein, we report a highly stable technique for fabricating n-doped CNT films. We elucidate the mechanism by which air stability can be achieved by completely covering CNTs with n-dopants to prevent oxidation; consequently, the stability is lost when exposed to scratches or moisture. Therefore, we introduce parylene as a protective layer for n-doped CNTs and achieve air stability for more than 365 d. Moreover, we demonstrate outstanding robust thermo-electric power generation from strong acids, alkalis, and alcohols, which cannot be realized with conventional air-stable n-dopants. The proposed stabilization technique is versatile and can be applied to various n-dopants. Thus, it is expected to be a key technology in the practical application of CNT devices.

Ultra-long air-stability of n-type carbon nanotube films with low thermal conductivity and all-carbon thermoelectric generators

This report presents n-type single-walled carbon nanotubes (SWCNT) films with ultra-long air stability using a cationic surfactant and demonstrates that the n-type Seebeck coefficient can be maintained for more than two years, which is the highest stability reported thus far to the best of our knowledge. Furthermore, the SWCNT films exhibit an extremely low thermal conductivity of 0.62 ± 0.08 W/(m·K) in the in-plane direction, which is very useful for thin-film TEGs. We fabricated all-carbon-nanotube TEGs, which use p-type SWCNT films and the n-type SWCNT films developed, and their air-stability was investigated. The TEGs did not degrade for 160 days and exhibited an output voltage of 24 mV, with a maximum power of 0.4 µW at a temperature difference of 60 K. These results open a pathway to enable the widespread use of carbon nanotube TEGs as power sources in IoT sensors.

Bicyclic-ring base doping induces n-type conduction in carbon nanotubes with outstanding thermal stability in air

The preparation of air and thermally stable n-type carbon nanotubes is desirable for their further implementation in electronic and energy devices that rely on both p- and n-type material. Here, a series of guanidine and amidine bases with bicyclic-ring structures are used as n-doping reagents. Aided by their rigid alkyl functionality and stable conjugate acid structure, these organic superbases can easily reduce carbon nanotubes. n-Type nanotubes doped with guanidine bases show excellent thermal stability in air, lasting for more than 6 months at 100 °C. As an example of energy device, a thermoelectric p/n junction module is constructed with a power output of ca. 4.7 μW from a temperature difference of 40 °C.