Embedding vertex corrections in GW self-energy: Theory, implementation, and outlook

The vertex function (Γ) within the Green's function formalism encapsulates information about all higher-order electron-electron interaction beyond those mediated by density fluctuations. Herein, we present an efficient approach that embeds vertex corrections in the one-shot GW correlation self-energy for isolated and periodic systems. The vertex-corrected self-energy is constructed through the proposed separation-propagation-recombination procedure: the electronic Hilbert space is separated into an active space and its orthogonal complement denoted as the "rest;" the active component is propagated by a space-specific effective Hamiltonian different from the rest. The vertex corrections are introduced by a rescaled time-dependent nonlocal exchange interaction. The direct Γ correction to the self-energy is further updated by adjusting the rescaling factor in a self-consistent post-processing cycle. Our embedding method is tested mainly on donor-acceptor charge-transfer systems. The embedded vertex effects consistently and significantly correct the quasiparticle energies of the gap-edge states. The fundamental gap is generally improved by 1-3 eV upon the one-shot GW approximation. Furthermore, we provide an outlook for applications of (embedded) vertex corrections in calculations of extended solids.

Laser Spectroscopy and Lifetime Measurements of the S1 State of Tetracyanoquinodimethane (TCNQ) in a Cold Gas-Phase Free-Jet

The S₁ electronic state of 7,7,8,8-Tetracyanoquinodimethane (TCNQ) has been investigated by laser induced fluorescence (LIF), dispersed fluorescence (DF) spectroscopy, and lifetime measurements under jet-cooled conditions in the gas-phase. The LIF spectrum showed a weak origin band at 412.13 nm (24262 cm^-1 ) with prominent progression and combination bands involving vibrations of 327, 1098, and 2430 cm^-1 . In addition, very strong bands appeared at ∼363.6 nm (3300 cm^-1 above the origin). Both the LIF and DF spectra indicate considerable geometric change in the S₁ state. The fluorescence lifetime of S₁ at zero-point level was obtained to be 220 ns. This lifetime is 40 times longer than the radiative lifetime estimated from the S₁ -S₀ oscillator strength. Furthermore, the lifetimes of the vibronic bands exhibited drastic energy dependence, indicating a strong mixing with the triplet (T₁ ) or intramolecular charge-transfer (CT) state. This study is thought to disclose intrinsic nature of TCNQ, which has been well known as a component of organic semiconductors and a versatile p-type dopant.

Study of the electronic structure of electron accepting cyano-films: TCNQversusTCNE

In this article, we perform systematic research on the electronic structure of two closely related organic electron acceptor molecules (TCNQ and TCNE), which are of technological interest due to their outstanding electronic properties. These studies have been performed from the experimental point of view by the use electron spectroscopies (XPS and UPS) and supported theoretically by the use of ab-initio DFT calculations. The cross-check between both molecules allows us to identify the characteristic electronic features of each part of the molecules and their contribution to the final electronic structure. We can describe the nature of the band gap of these materials, and we relate this with the appearance of the shake-up features in the core level spectra. A band bending and energy gap reduction of the aforementioned electronic structure in contact with a metal surface are seen in the experimental results as well in the theoretical calculations. This behavior implies that the TCNQ thin film accepts electrons from the metal substrate becoming a Schottky n-junction.