Phase Separation of Silicon-Containing Polymer/Polystyrene Blends in Spin-Coated Films

In this Article, two readily available polymers that contain silicon and have different surface tensions, polydimethylsiloxane (PDMS) and polyphenylsilsequioxane (PPSQ), were used to produce polymer blends with polystyrene (PS). Spin-coated thin films of the polymer blends were treated by O2 reactive-ion etching (RIE). The PS constituent was selectively removed by O2 RIE, whereas the silicon-containing phase remained because of the high etching resistance of silicon. This selective removal of PS substantially enhanced the contrast of the phase separation morphologies for better scanning electron microscope (SEM) and atomic force microscope (AFM) measurements. We investigated the effects of the silicon-containing constituents, polymer blend composition, concentration of the polymer blend solution, surface tension of the substrate, and the spin-coating speed on the ultimate morphologies of phase separation. The average domain size, ranging from 100 nm to 10 μm, was tuned through an interplay of these factors. In addition, the polymer blend film was formed on a pure organic layer, through which the aspect ratio of the phase separation morphologies was further amplified by a selective etching process. The formed nanostructures are compatible with existing nanofabrication techniques for pattern transfer onto substrates.

A New Strategy of Lithography Based on Phase Separation of Polymer Blends

Herein, we propose a new strategy of maskless lithographic approach to fabricate micro/nano-porous structures by phase separation of polystyrene (PS)/Polyethylene glycol (PEG) immiscible polymer blend. Its simple process only involves a spin coating of polymer blend followed by a development with deionized water rinse to remove PEG moiety, which provides an extremely facile, low-cost, easily accessible nanofabrication method to obtain the porous structures with wafer-scale. By controlling the weight ratio of PS/PEG polymer blend, its concentration and the spin-coating speed, the structural parameters of the porous nanostructure could be effectively tuned. These micro/nano porous structures could be converted into versatile functional nanostructures in combination with follow-up conventional chemical and physical nanofabrication techniques. As demonstrations of perceived potential applications using our developed phase separation lithography, we fabricate wafer-scale pure dielectric (silicon)-based two-dimensional nanostructures with high broadband absorption on silicon wafers due to their great light trapping ability, which could be expected for promising applications in the fields of photovoltaic devices and thermal emitters with very good performances, and Ag nanodot arrays which possess a surface enhanced Raman scattering (SERS) enhancement factor up to 1.64 × 10⁸ with high uniformity across over an entire wafer.

Polymer blend lithography: A versatile method to fabricate nanopatterned self-assembled monolayers

A rapid and cost-effective lithographic method, polymer blend lithography (PBL), is reported to produce patterned self-assembled monolayers (SAM) on solid substrates featuring two or three different chemical functionalities. For the pattern generation we use the phase separation of two immiscible polymers in a blend solution during a spin-coating process. By controlling the spin-coating parameters and conditions, including the ambient atmosphere (humidity), the molar mass of the polystyrene (PS) and poly(methyl methacrylate) (PMMA), and the mass ratio between the two polymers in the blend solution, the formation of a purely lateral morphology (PS islands standing on the substrate while isolated in the PMMA matrix) can be reproducibly induced. Either of the formed phases (PS or PMMA) can be selectively dissolved afterwards, and the remaining phase can be used as a lift-off mask for the formation of a nanopatterned functional silane monolayer. This "monolayer copy" of the polymer phase morphology has a topographic contrast of about 1.3 nm. A demonstration of tuning of the PS island diameter is given by changing the molar mass of PS. Moreover, polymer blend lithography can provide the possibility of fabricating a surface with three different chemical components: This is demonstrated by inducing breath figures (evaporated condensed entity) at higher humidity during the spin-coating process. Here we demonstrate the formation of a lateral pattern consisting of regions covered with 1H,1H,2H,2H-perfluorodecyltrichlorosilane (FDTS) and (3-aminopropyl)triethoxysilane (APTES), and at the same time featuring regions of bare SiO(x). The patterning process could be applied even on meter-sized substrates with various functional SAM molecules, making this process suitable for the rapid preparation of quasi two-dimensional nanopatterned functional substrates, e.g., for the template-controlled growth of ZnO nanostructures [1].