Hyper-Cross-Linked Polymer with Enhanced Porosity by In Situ Removal of Trimethylsilyl Group via Electrophilic Aromatic Substitution

We report the synthesis of microporous hyper-cross-linked polymers (HCPs) with increased specific surface area and porosity by the in situ removal of trimethylsilyl (TMS) groups during hyper-cross-linking. We synthesized poly(4-trimethylsilylstyrene-co-vinylbenzyl chloride-co-divinylbenzene)s (P(TMSS-co-VBzCl-co-DVB)s) with different compositions by reversible addition-fragmentation chain transfer copolymerization and converted them into HCPs by reacting with FeCl₃ in 1,2-dichloroethane. The nearly quantitative removal of the TMS groups was observed during the reaction following the electrophilic aromatic substitution mechanism, where the TMS group shows higher reactivity than an aromatic hydrogen. Substantial enhancement in pore characteristics including surface area, microporosity, and mesoporosity was noticed up to a certain level of TMSS incorporation, compared with HCP derived from P(VBzCl-co-DVB). We suggest the porogenic TMS group increases porosity mainly by in situ removal via facilitated substitution reaction, which creates permanent voids in the hyper-cross-linked network. The use of TMSS provides a feasible and complementary route to tuning the pore characteristics of HCPs by varying DVB content, and is applicable to the synthesis of hierarchically porous polymers containing micropores within a mesoporous framework from block polymer precursors.

Oligosaccharide/silicon-containing block copolymers with 5 nm features for lithographic applications

Block copolymers demonstrate potential for use in next-generation lithography due to their ability to self-assemble into well-ordered periodic arrays on the 3-100 nm length scale. The successful lithographic application of block copolymers relies on three critical conditions being met: high Flory-Huggins interaction parameters (χ), which enable formation of <10 nm features, etch selectivity between blocks for facile pattern transfer, and thin film self-assembly control. The present paper describes the synthesis and self-assembly of block copolymers composed of naturally derived oligosaccharides coupled to a silicon-containing polystyrene derivative synthesized by activators regenerated by electron transfer atom transfer radical polymerization. The block copolymers have a large χ and a low degree of polymerization (N) enabling formation of 5 nm feature diameters, incorporate silicon in one block for oxygen reactive ion etch contrast, and exhibit bulk and thin film self-assembly of hexagonally packed cylinders facilitated by a combination of spin coating and solvent annealing techniques. As observed by small angle X-ray scattering and atomic force microscopy, these materials exhibit some of the smallest block copolymer features in the bulk and in thin films reported to date.