Holzgrafe J, Puma E, Cheng R, Warner H, Shams-Ansari A, Shankar R, Lončar M. Relaxation of the electro-optic response in thin-film lithium niobate modulators.
OPTICS EXPRESS 2024;
32:3619-3631. [PMID:
38297579 DOI:
10.1364/oe.507536]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2023] [Accepted: 12/18/2023] [Indexed: 02/02/2024]
Abstract
Thin-film lithium niobate (TFLN) is a promising electro-optic (EO) photonics platform with high modulation bandwidth, low drive voltage, and low optical loss. However, EO modulation in TFLN is known to relax on long timescales. Instead, thermo-optic heaters are often used for stable biasing, but heaters incur challenges with cross-talk, high power, and low bandwidth. Here, we characterize the low-frequency (1 mHz to 1 MHz) EO response of TFLN modulators, investigate the root cause of EO relaxation and demonstrate methods to improve bias stability. We show that relaxation-related effects can enhance EO modulation across a frequency band spanning 1kHz to 20kHz in our devices - a counter-intuitive result that can confound measurement of half-wave voltage (V π) in TFLN modulators. We also show that EO relaxation can be slowed by more than 104-fold through control of the LN-metal interface and annealing, offering progress toward lifetime-stable EO biasing. Such robust EO biasing would enable applications for TFLN devices where cross-talk, power, and bias bandwidth are critical, such as quantum devices, high-density integrated photonics, and communications.
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