Feruglio S, Lu GN, Garda P, Vasilescu G. A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications.
SENSORS 2008;
8:6566-6594. [PMID:
27873887 PMCID:
PMC3707468 DOI:
10.3390/s8106566]
[Citation(s) in RCA: 24] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/08/2008] [Revised: 09/04/2008] [Accepted: 10/17/2008] [Indexed: 11/16/2022]
Abstract
A CMOS Buried Double Junction PN (BDJ) photodetector consists of two vertically-stacked photodiodes. It can be operated as a photodiode with improved performance and wavelength-sensitive response. This paper presents a review of this device and its applications. The CMOS implementation and operating principle are firstly described. This includes the description of several key aspects directly related to the device performances, such as surface reflection, photon absorption and electron-hole pair generation, photocurrent and dark current generation, etc. SPICE modelling of the detector is then presented. Next, design and process considerations are proposed in order to improve the BDJ performance. Finally, several BDJ-detector-based image sensors provide a survey of their applications.
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