Interference coatings based on synthesized silicon nitride

Optical interference coatings for optics and photonics [Invited]

Optical interference coatings play as an important role in the progress in optics and photonics. In this article we give a minireview of the evolution of optical interference coatings from the theory, the design, to the manufacture. Some interesting but challenging topics for the future are also discussed.

Effect of thermal annealing on the optical properties and residual stress of graded-index-like films deposited by radio-frequency ion-beam sputtering

Composite films of Ta-Si oxide and graded-index-like films have been realized by using radio-frequency ion-beam sputtering. The influence of thermal annealing on the optical properties and residual stress of single-layer composite films and graded-index-like films has been studied. The residual stress and optical properties of both types of films were more stable than that of the notch filters fabricated from a series of discrete quarter-wave layers made by alternatively stacking high and low index materials after annealing.

Infrared interference coating by use of Si3N4 and SiO2 films with ion-assisted deposition

Silicon nitride (Si(3)N(4)) and silicon dioxide (SiO(2)) films were prepared by ion-assisted deposition, and a higher deposition rate was achieved for both films. The results of x-ray diffraction and transmission electron microscopy measurements showed that the films have amorphous structures. As measured by infrared (IR) spectrometry and x-ray photoelectron spectrometry, both stoichiometric films have extremely low hydrogen content. The IR optical constants of the films were determined by spectroscopic ellipsometry. Both films exhibited a low extinction coefficient at wavelengths from 2 to 7 microm. The application of Si(3)N(4) and SiO(2) films on the IR interference coating is demonstrated.

Rugate filter made with composite thin films by ion-beam sputtering

Composite films of Ta-Si oxide with refractive indices that varied from 1.48 to 2.15 were realized by using rf ion-beam sputtering. All the composite films were amorphous and had a surface roughness of less than 0.3 nm. The inhomogeneity of the composite was discussed, and a rugate filter was designed and fabricated by automatic computer control.

Effect of high-energy electron-beam irradiation on the optical properties of ion-beam-sputtered silicon oxynitride thin films

Silicon oxynitride thin films are prepared by ion-beam sputtering, and the optical properties and surface chemical composition are studied by spectrophotometric and x-ray photoelectron spectroscopy, respectively. It is seen that the films sputtered by use of nitrogen alone as the sputtering species from a silicon nitride target are completely transparent (k < 0.005) and have a refractive-index dispersion from 1.85 to 1.71 over the visible and near-infrared spectral regions, and the films show distinct spectral lines that are due to silicon, Si(2s), nitrogen, N(1s), and oxygen, O(1s). Sputter deposition of argon and of argon and nitrogen produces silicon-rich silicon oxynitride films that are absorbent and have high refractive indices. These films have a direct electronic transition, with a threshold energy of 1.75 eV. Electron irradiation transforms optically transparent silicon oxynitride films into silicon-rich silicon oxynitride films that have higher refractive indices and are optically absorbing owing to the presence of nonsaturated silicon in the irradiated films. The degradation in current responsivity of silicon photodetectors, under electron irradiation, is within 3% over the wavelength region from 450 to 750 nm, which is entirely due to the degradation of optical properties of silicon oxynitride antireflection coatings.