Effect of wrinkles on extreme ultraviolet pellicle reflectivity and local critical dimension

Structured illumination ptychography and at-wavelength characterization with an EUV diffuser at 13.5 nm wavelength

Structured illumination is essential for high-performance ptychography. Especially in the extreme ultraviolet (EUV) range, where reflective optics are prevalent, the generation of structured beams is challenging and, so far, mostly amplitude-only masks have been used. In this study, we generate a highly structured beam using a phase-shifting diffuser optimized for 13.5 nm wavelength and apply this beam to EUV ptychography. This tailored illumination significantly enhances the quality and resolution of the ptychography reconstructions. In particular, when utilizing the full dynamics range of the detector, the resolution has been improved from 125 nm, when using an unstructured beam, to 34 nm. Further, ptychography enables the quantitative measurement of both the amplitude and phase of the EUV diffuser at 13.5 nm wavelength. This capability allows us to evaluate the influence of imperfections and contaminations on its "at wavelength" performance, paving the way for advanced EUV metrology applications and highlighting its importance for future developments in nanolithography and related fields.

Extreme ultraviolet pellicle wrinkles influence on mask 3D effects: experimental demonstration

Extreme ultraviolet (EUV) lithography uses reflective optics and a thick mask absorber, leading to mask 3D (M3D) effects. These M3D effects cause disparities in the amplitudes and phases of EUV mask diffractions, impacting mask imaging performance and reducing process yields. Our findings demonstrate that wrinkles in the EUV pellicle can exacerbate M3D effects. This imbalance results in critical dimension variation, image contrast loss, and pattern shift in mask images. Therefore, the use of a pellicle material with thermodynamic characteristics that minimize wrinkles when exposed to EUV rays is imperative.

Characterisation of engineered defects in extreme ultraviolet mirror substrates using lab-scale extreme ultraviolet reflection ptychography

Ptychography is a lensless imaging technique that is aberration-free and capable of imaging both the amplitude and the phase of radiation reflected or transmitted from an object using iterative algorithms. Working with extreme ultraviolet (EUV) light, ptychography can provide better resolution than conventional optical microscopy and deeper penetration than scanning electron microscope. As a compact lab-scale EUV light sources, high harmonic generation meets the high coherence requirement of ptychography and gives more flexibilities in both budget and experimental time compared to synchrotrons. The ability to measure phase makes reflection-mode ptychography a good choice for characterising both the surface topography and the internal structural changes in EUV multilayer mirrors. This paper describes the use of reflection-mode ptychography with a lab-scale high harmonic generation based EUV light source to perform quantitative measurement of the amplitude and phase reflection from EUV multilayer mirrors with engineered substrate defects. Using EUV light at 29.6nm from a tabletop high harmonic generation light source, a lateral resolution down to ∼88nm and a phase resolution of 0.08rad (equivalent to topographic height variation of 0.27nm) are achieved. The effect of surface distortion and roughness on EUV reflectivity is compared to topographic properties of the mirror defects measured using both atomic force microscopy and scanning transmission electron microscopy. Modelling of reflection properties from multilayer mirrors is used to predict the potential of a combination of on-resonance, actinic ptychographic imaging at 13.5nm and atomic force microscopy for characterising the changes in multilayered structures.

High-speed and wide-field nanoscale table-top ptychographic EUV imaging and beam characterization with a sCMOS detector

We present high-speed and wide-field EUV ptychography at 13.5 nm wavelength using a table-top high-order harmonic source. Compared to previous measurements, the total measurement time is significantly reduced by up to a factor of five by employing a scientific complementary metal oxide semiconductor (sCMOS) detector that is combined with an optimized multilayer mirror configuration. The fast frame rate of the sCMOS detector enables wide-field imaging with a field of view of 100 µm × 100 µm with an imaging speed of 4.6 Mpix/h. Furthermore, fast EUV wavefront characterization is employed using a combination of the sCMOS detector with orthogonal probe relaxation.