Figure of merit enhancement of surface plasmon resonance sensors using absentee layer

Performance of Surface Plasmon Resonance Sensors Using Copper/Copper Oxide Films: Influence of Thicknesses and Optical Properties

Surface plasmon resonance sensors (SPR) using copper for sensitive parts are a competitive alternative to gold and silver. Copper oxide is a semiconductor and has a non-toxic nature. The unavoidable presence of copper oxide may be of interest as it is non-toxic, but it modifies the condition of resonance and the performance of the sensor. Therefore, the characterization of the optical properties of copper and copper oxide thin films is of interest. We propose a method to recover both the thicknesses and optical properties of copper and copper oxide from absorbance curves over the (0.9;3.5) eV range, and we use these results to numerically investigate the surface plasmon resonance of copper/copper oxide thin films. Samples of initial copper thicknesses 10, 30 and 50 nm, after nine successive oxidations, are systematically studied to simulate the signal of a Surface Plasmon Resonance setup. The results obtained from the resolution of the inverse problem of absorbance are used to discuss the performance of a copper-oxide sensor and, therefore, to evaluate the optimal thicknesses.

Polaritonic figure of merit of plane structures

Based on the ability of plane structures to simultaneously optimize the propagation, confinement, and energy of surface plasmon-polaritons or surface phonon-polaritons, we develop the polaritonic figure of merit Z = βRΛ²/δ, where βR, Λ and δ are the longitudinal wave vector, propagation length, and penetration depth, respectively. Explicit and analytical expressions of Z are derived for a single interface and a suspended thin film, as functions of the material permittivities and the film thickness. Higher Z are obtained for thinner films and smaller energy losses. The application of the obtained results for a SiC-air interface and a SiC thin film suspended in air shows that both structures are able to maximize the presence of polaritons at a frequency near to, but different than that at which the real part of the SiC permittivity exhibits a dip. Furthermore, using the temperature change of this dip, we show that the propagation length, confinement and energy of polaritons increases with its deepness, which provides an effective way to enhance the overall Z of polaritonic structures.