Time-domain measurements reveal spatial aberrations in a sub-surface two-photon microscope

An insight into optical beam induced current microscopy: Concepts and applications

Laser scanning optical beam induced current (OBIC) microscopy has become a powerful and nondestructive alternative to other complicated methods like electron beam induced current (EBIC) microscopy, for high resolution defect analysis of electronic devices. OBIC is based on the generation of electron-hole pairs in the sample due to the raster scanning of a focused laser beam with energy equal or greater than the band gap energy and synchronized detection of resultant current profile with respect to the beam positions. OBIC is particularly suitable to localize defect sites caused by metal-semiconductor interdiffusion or electrostatic discharge (ESD). OBIC signals, thus, are capable of revealing the parameters/factors directly related to the reliability and efficiency of the electronic device under test (DUT). In this review, the basic principles of OBIC microscopy strategies and their notable applications in semiconductor device characterization are elucidated. An overview on the developments of OBIC microscopy is also presented. Specifically, the recent progresses on the following three OBIC measurement strategies have been reviewed, which include continuous laser based single photon OBIC, pulsed laser based single photon OBIC, and multiphoton OBIC microscopy for three-dimensional mapping of photocurrent response of electronic devices at high spatiotemporal resolution. Challenges and future prospects of OBIC in characterizing complex electronic devices are also discussed.

Impact of frequency-dependent spherical aberration in the focusing of ultrashort pulses

In this paper, the temporal and spatial intensity pulse distributions are calculated around the focal region of an optical system using a combination of ray tracing and a wave propagation method. We analyze how to measure the width of the intensity pulse distributions to estimate pulse duration and spot size in order to study the impact of the variation of spherical aberration with frequency in a pulse on the intensity distributions. Two experimental techniques used in the laboratory are also modeled: the knife-edge test to measure spatial distribution and the intensity autocorrelation technique to measure the temporal distribution. We use two measuring criteria, the full-width half-maximum (FWHM) and standard deviation (σ), to compare the spatial and temporal intensity distributions of the calculated diffraction patterns and those obtained from the simulated experimental techniques. We show that the FWHM is not a good criterion, since it gives different results in the measured intensity distributions in time and space when they are measured directly from the theoretical modeling and when they are measured from the modeled experimental techniques used in the laboratory. The standard deviation, however, is a consistent criterion, giving the same results for the calculated intensity distributions and the modeled experiments.

Low-energy/pulse response and high-resolution-CMOS camera for spatiotemporal femtosecond laser pulses characterization @ 1.55 μm

In this work, we present a commercial CMOS (Complementary Metal Oxide Semiconductor) Raspberry Pi camera implemented as a Near-Infrared detector for both spatial and temporal characterization of femtosecond pulses delivered from a femtosecond Erbium Doped Fiber laser (fs-EDFL) @ 1.55 µm, based on the Two Photon Absorption (TPA) process. The capacity of the device was assessed by measuring the spatial beam profile of the fs-EDFL and comparing the experimental results with the theoretical Fresnel diffraction pattern. We also demonstrate the potential of the CMOS Raspberry Pi camera as a wavefront sensor through its a nonlinear response in a Shack-Hartmann array and for the temporal characterization of the femtosecond pulses delivered from the fs-EDFL through TPA Intensity autocorrelation measurements. The direct pulse detection and measurement, through the nonlinear response with a CMOS, is proposed as a novel and affordable high-resolution and high-sensitivity alternative to costly detectors such as CCDs, wavefront sensors and beam profilers @ 1.55 µm. The measured fluence threshold, down to 17.5 µJ/cm², and pJ/pulse energy response represents the lowest reported values applied as a beam profiler and a TPA Shack-Hartmann wavefront sensor, to our knowledge.