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Liu S, Wang H, Hou J, Zhang Q, Chen X, Zhong B, Zhang M. Combined processing strategy based on magnetorheological finishing for monocrystalline silicon x-ray mirrors. APPLIED OPTICS 2022; 61:5575-5584. [PMID: 36255784 DOI: 10.1364/ao.459076] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/23/2022] [Accepted: 06/05/2022] [Indexed: 06/16/2023]
Abstract
Higher requirements for monocrystalline silicon x-ray mirrors have been put forward with the development of synchrotron radiation optics. The existing processing technologies limit their efficiency while achieving high-precision manufacturing of x-ray mirrors. Hence, this paper formulates a processing strategy of employing magnetorheological finishing (MRF) to make the precision of x-ray mirrors fully meet the standard. The combination of fine polishing and super-smooth processing can effectively improve the surface quality of mirrors. The residual error, wavefront gradient, and surface roughness of the mirror can reach 7.2 nm, 0.42 µrad, and 0.28 nm, respectively, after several iterations. The research not only indicates that MRF can replace the existing manufacturing method and greatly improve processing efficiency, but also provides technical support for optimizing the processing route of x-ray mirrors.
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Shao Q, Duan S, Fu L, Lyu B, Zhao P, Yuan J. Shear Thickening Polishing of Quartz Glass. MICROMACHINES 2021; 12:mi12080956. [PMID: 34442578 PMCID: PMC8397942 DOI: 10.3390/mi12080956] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/10/2021] [Revised: 08/01/2021] [Accepted: 08/10/2021] [Indexed: 11/16/2022]
Abstract
Quartz glass is a typical optical material. In this research, colloidal silica (SiO2) and colloidal cerium oxide (CeO2) are used as abrasive grains to polish quartz glass in the shear thickening polishing (STP) process. The STP method employs the shear-thickening mechanism of non-Newtonian power-law fluid to achieve high-efficiency and high-quality polishing. The different performance in material removal and surface roughness between SiO2 and CeO2 slurries was analyzed. The influence of the main factors including polishing speed, abrasive concentration, and pH value on the MRR, workpiece surface roughness, and the surface topography was discussed. Two different slurries can both achieve fine quartz surface in shear thickening polishing with the polishing speed 100 rpm, and pH value 8. The quartz glass surface roughness Ra decreases from 120 ± 10 to 2.3 nm in 14 minutes' polishing with 8 wt% 80 nm SiO2 slurry, and the MRR reaches 121.6 nm/min. The quartz glass surface roughness Ra decreases from 120 ± 10 to 2.1 nm in 12 minutes polishing by 6 wt% 100 nm CeO2 slurry and the MRR reaches 126.2 nm/min.
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Affiliation(s)
- Qi Shao
- College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou 310014, China; (Q.S.); (S.D.); (L.F.); (P.Z.); (J.Y.)
- Key Laboratory of Special Purpose Equipment and Advanced Processing Technology, Ministry of Education and Zhejiang Province, Zhejiang University of Technology, Hangzhou 310014, China
| | - Shixiang Duan
- College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou 310014, China; (Q.S.); (S.D.); (L.F.); (P.Z.); (J.Y.)
- Key Laboratory of Special Purpose Equipment and Advanced Processing Technology, Ministry of Education and Zhejiang Province, Zhejiang University of Technology, Hangzhou 310014, China
| | - Lin Fu
- College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou 310014, China; (Q.S.); (S.D.); (L.F.); (P.Z.); (J.Y.)
- Key Laboratory of Special Purpose Equipment and Advanced Processing Technology, Ministry of Education and Zhejiang Province, Zhejiang University of Technology, Hangzhou 310014, China
| | - Binghai Lyu
- College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou 310014, China; (Q.S.); (S.D.); (L.F.); (P.Z.); (J.Y.)
- Key Laboratory of Special Purpose Equipment and Advanced Processing Technology, Ministry of Education and Zhejiang Province, Zhejiang University of Technology, Hangzhou 310014, China
- Correspondence:
| | - Ping Zhao
- College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou 310014, China; (Q.S.); (S.D.); (L.F.); (P.Z.); (J.Y.)
- Key Laboratory of Special Purpose Equipment and Advanced Processing Technology, Ministry of Education and Zhejiang Province, Zhejiang University of Technology, Hangzhou 310014, China
| | - Julong Yuan
- College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou 310014, China; (Q.S.); (S.D.); (L.F.); (P.Z.); (J.Y.)
- Key Laboratory of Special Purpose Equipment and Advanced Processing Technology, Ministry of Education and Zhejiang Province, Zhejiang University of Technology, Hangzhou 310014, China
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Mosavat M, Rahimi A. Simulation and experimental study on the effect of abrasive size, rotational speed, and machining gap during ultra-precision polishing of monocrystalline silicon. Colloids Surf A Physicochem Eng Asp 2019. [DOI: 10.1016/j.colsurfa.2019.05.005] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
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Mosavat M, Rahimi A, Eshraghi MJ, Karami S. Nano-finishing of the monocrystalline silicon wafer using magnetic abrasive finishing process. APPLIED OPTICS 2019; 58:3447-3453. [PMID: 31044841 DOI: 10.1364/ao.58.003447] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/25/2019] [Accepted: 03/18/2019] [Indexed: 06/09/2023]
Abstract
The monocrystalline silicon wafer is the key material for micro-electro-mechanical systems. The performance of these wafers depends on their surface and subsurface quality. This research aims to study the effect of process parameters on the reduction ratio rate in surface roughness (%ΔR˙) of monocrystalline silicon wafers during the magnetic abrasive finishing process using response surface methodology. The parameters studied are machining gap, rotational speed, abrasive size, and magnetic abrasive particle (MAP) size. Quadratic models are developed by applying Box-Behnken design. Also, experiments are carried out on the silicon wafer, and the results of surface roughness data are analyzed by using analysis of variance. The most significant factor on each experimental design response is identified. According to our findings, the maximum %ΔR˙ value and the best surface roughness of the silicon wafer achieve 3.70 and 31 nm, respectively. Furthermore, the material removal mechanism in wafers is investigated by using atomic force microscopy. Our observations show that both micro-fracture and micro-cutting mechanisms might happen, and it highly depends on polishing parameters.
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