48 × 48 pixelated addressable full-color micro display based on flip-chip micro LEDs

Wafer-scale monolithic integration of full-colour micro-LED display using MoS2 transistor

Large-scale growth of transition metal dichalcogenides and their subsequent integration with compound semiconductors is one of the major obstacles for two-dimensional materials implementation in optoelectronics applications such as active matrix displays or optical sensors. Here we present a novel transition metal dichalcogenide-on-compound-semiconductor fabrication method that is compatible with a batch microfabrication process. We show how a thin film of molybdenum disulfide (MoS₂) can be directly synthesized on a gallium-nitride-based epitaxial wafer to form a thin film transistor array. Subsequently, the MoS₂ thin film transistor was monolithically integrated with micro-light-emitting-diode (micro-LED) devices to produce an active matrix micro-LED display. In addition, we demonstrate a simple approach to obtain red and green colours through the printing of quantum dots on a blue micro-LED, which allows for the scalable fabrication of full-colour micro-LED displays. This strategy represents a promising route to attain heterogeneous integration, which is essential for high-performance optoelectronic systems that can incorporate the established semiconductor technology and emerging two-dimensional materials.

Contact Printing of Multilayered Thin Films with Shape Memory Polymers

This study describes a method for transfer printing microarrays of multilayered organic-inorganic thin films using shape memory printing stamps and microstructured donor substrates. By applying the films on the microstructured donor substrates during physical vapor deposition and modulating the interfacial adhesion using a shape memory elastomer during printing, this method achieves (1) high lateral and feature-edge resolution and (2) high transfer efficiency from the donor to the receiver substrate. For demonstration, polyurethane-acrylate stamps and silicon/silicon oxide donor substrates were used in the large-area transfer printing of organic-inorganic thin-film stacks with micrometer lateral dimensions and sub-200 nm thickness.

Hybrid Device of Blue GaN Light-Emitting Diodes and Organic Light-Emitting Diodes with Color Tunability for Smart Lighting Sources

A lighting device with a wide color-tunable range is still a challenge for lighting based on either organic light-emitting diodes (OLEDs) or inorganic LEDs. In this work, we first proposed a novel hybrid device of organic LEDs and inorganic blue GaN LEDs to achieve full white and other colors. Organic LEDs were stacked with green and red emissive layers and connected with blue GaN LEDs in parallel but in opposite polarity voltage. Under the alternate-current (AC) driving, the hybrid structure can be controlled independently by applying timing variable opposite voltages to emit the light from either blue LEDs or the stacked OLEDs for forming mixed colors. The hybrid device can generate white light, varying in a wide range by changing the amplitude and duty ratio (DR) of AC-driving signals, from cold white to standard white and to warm white (3668-11 833 K). When an AC voltage of (4.80 V, -2.45 V) was applied, the device has a high color gamut of 95.24% National Television System Committee (NTSC) and a high color rendering index (R _a) of 92.4%. The novel hybrid device with the blue LED and OLED in opposite polarity exhibits potential applications in smart solid-state lighting, display, and light communication.

Passive anti-sunlight glare traffic signs with non-axisymmetric freeform lens design

This paper proposes a passive optical brightening element design, a non-axisymmetric freeform lens (NAFL), arranged and assembled on a traditional traffic sign. NAFL is the first optical design which can effectively solve the traffic problem that direct sunlight affects the driver's inability to look directly at the traffic sign. The NAFL can converge the sunlight behind the traffic sign and diverge forward to 150 meters away. In this way, the NAFL array combinations on the traffic sign can directly rely on sunlight as image information pixels. According to the simulation, the optical efficiency of the NAFL can be as high as 81.5%. Besides, the angular tolerance is also analyzed to evaluate the working hours of the NAFL. Finally, we made the prototype and proved that such passive brightening components could effectively improve the traffic sign's visibility in harsh sunlight.

2000 PPI silicon-based AlGaInP red micro-LED arrays fabricated via wafer bonding and epilayer lift-off

In this article, 2000 PPI red silicon-based AlGaInP micro-LED arrays were fabricated and investigated. The AlGaInP epilayer was transferred onto the silicon substrate via the In-Ag bonding technique and an epilayer lift-off process. The silicon substrate with a high thermal conductivity could provide satisfactory heat dissipation, leading to micro-LED arrays that had a stable emission spectrum with increasing current density from 20 to 420 A/cm² along with a red-shift of the peak position from 624.69 to 627.12 nm (Δλ = 2.43 nm). Additionally, increasing the injection current density had little effect on the CIE (x, y) of the micro-LED arrays. Further, the I-V characteristics and light output power of micro-LED arrays with different pixel sizes demonstrated that the AlGaInP red micro-LED array on a silicon substrate had excellent electrical stability and optical output.

Inkjet-Printed Quantum Dot Color Conversion Films for High-Resolution and Full-Color Micro Light-Emitting Diode Displays

Micro light-emitting diodes (μLEDs) have been considered an excellent candidate for next-generation display technology because of their promising optical properties, outstanding power efficiency, fast response time, high reliability, etc. However, the μLED displays based on individual red-green-blue (RGB) primary chips suffer from severe issues in mass production, such as difficulty in mass transfer, high cost, and low reproducibility. To overcome these issues, an alternative approach has been proposed to achieve full-color μLEDs by assembling ultraviolet- or blue-μLEDs with QD color conversion films (CCFs). In this Perspective, we give a general introduction of QD-based μLEDs and provide an overview of the preparation of fine patterned QD CCFs by inkjet printing. We then discuss advances in II-VI core/shell QD-based μLEDs. This is followed by representative progress on preliminary exploration of lead halide perovskite QD CCFs, which have great potential for use in high-resolution and full-color μLEDs displays. Finally, we address the remaining challenges for further improvement of QD-based μLEDs.

Gigabit per second visible light communication based on AlGaInP red micro-LED micro-transfer printed onto diamond and glass

Full-color smart displays, which act both as a display and as a high-speed visible light communication (VLC) transmitter, can be realized by the integration of red-green-blue micron-sized light emitting diodes (micro-LEDs) onto a common platform. In this work, we report on the integration of aluminum gallium indium phosphide red micro-LEDs onto diamond and glass substrates by micro-transfer printing and their application in VLC. The device on-diamond exhibits high current density and bandwidth operation, enabled by diamond's superior thermal properties. Employing an orthogonal frequency division multiplexing modulation scheme, error-free data rates of 2.6 Gbps and 5 Gbps are demonstrated for a single micro-LED printed on-glass and on-diamond, respectively. In a parallel configuration, a 2x1 micro-LED array achieves error-free data rates of 3 Gbps and 6.6 Gbps, on-glass and on-diamond, respectively.

Design of double-slot antennas for terahertz array detectors in flip chip packaging

In flip chip packaging, the performance of terahertz (THz) array detectors is directly influenced by the flip chip. In addition, predicting this effect is difficult because the readout circuits in the flip chip are very complex. In this study, to reduce the influence of the flip chip, we design a new type of double-slot antennas for THz array detectors. For comparison, we designed and analyzed dipole antennas with the same period. Numerical simulations showed that the coupling efficiency of the double-slot array antennas at approximately 0.6255 THz does not degrade, if the flip chip structure is changed. However, in the case of dipole array antennas with the same period of 250 µm, coupling efficiency was severely affected by the flip chip structure. These results revealed that double-slot antennas are more applicable to THz array detectors compared with dipole antennas, as they can more effectively reduce the influence of the flip chip. Furthermore, we integrated the double-slot antennas into Nb₅N₆ THz array detectors using the micro-fabrication technology. Measurement results indicated that double-slot antennas possess the advantages of facile preparation and large-scale integration, which provide great potential for THz array detectors in flip chip packaging.