Far-field of GaN film-transferred green light-emitting diodes with two-dimensional photonic crystals

Morphologies and optical and electrical properties of InGaN/GaN micro-square array light-emitting diode chips

InGaN/GaN micro-square array light-emitting diode (LED) chips (micro-chips) have been prepared via the focused ion beam (FIB) etching technique, which can not only reduce ohmic contact degradation but also control the aspect ratio precisely in three-dimensional (3D) structure LED (3D-LED) device fabrication. The effects of FIB beam current and micro-square array depth on morphologies and optical and electrical properties of the micro-chips have been studied. Our results show that sidewall surface morphology and optical and electrical properties of the micro-chips degrade with increased beam current. After potassium hydroxide etching with different times, an optimal current-voltage and luminescence performance can be obtained. Combining the results of cathodoluminescence mappings and light output-current characteristics, the light extraction efficiency of the micro-chips is reduced as FIB etch depth increases. The mechanisms of micro-square depth on light extraction have been revealed by 3D finite difference time domain.

Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

An anodic aluminum oxide (AAO) patterned sapphire substrate, with the lattice constant of 520 ± 40 nm, pore dimension of 375 ± 50 nm, and height of 450 ± 25 nm was firstly used as a nanoimprint lithography (NIL) stamp and imprinted onto the surface of the green light-emitting diode (LED). A significant light extraction efficiency (LEE) was improved by 116% in comparison to that of the planar LED. A uniform broad protrusion in the central area and some sharp lobes were also obtained in the angular resolution photoluminescence (ARPL) for the AAO patterned LED. The mechanism of the enhancement was correlated to the fluctuations of the lattice constant and domain orientation of the AAO-pattern, which enabled the extraction of more guided modes from the LED device.

Reagent-free photochemical silver dendrite synthesis on a gallium nitride thin film as a SERS-active substrate and catalytic cluster

A photochemical approach for dendrite synthesis on a GaN substrate is presented.

CCT- and CRI-tuning of white light-emitting diodes using three-dimensional non-close-packed colloidal photonic crystals with photonic stop-bands

This study exhibited the correlated color temperature (CCT)- and color-rendering index (CRI)-tuning behavior of light emission from white light-emitting diodes (WLEDs) using three-dimensional non-close-packed (3D NCP) colloidal photonic crystals (CPhCs). The CCT of approximately 5300 K (characteristic of cold WLEDs) of white light propagated through the NCP CPhCs dropped to 3000 K (characteristic of warm WLEDs) because of the photonic stop-bands based on the photonic band structures of NCP CPhCs. This study successfully developed a novel technique that introduces lower-cost CCT- and CRI-tuning cold WLEDs with a CRI of over 90 that of warm WLEDs by using 3D NCP CPhCs.

Localized surface plasmon resonances in gold nano-patches on a gallium nitride substrate

In this paper we describe the design, fabrication and characterization of gold nano-patches, deposited on gallium nitride substrate, acting as optical nanoantennas able to efficiently localize the electric field at the metal-dielectric interface. We analyse the performance of the proposed device, evaluating the transmission and the electric field localization by means of a three-dimensional finite difference time domain (FDTD) method. We detail the fabrication protocol and show the morphological characterization. We also investigate the near-field optical transmission by means of scanning near-field optical microscope measurements, which reveal the excitation of a localized surface plasmon resonance at a wavelength of 633 nm, as expected by the FDTD calculations. Such results highlight how the final device can pave the way for the realization of a single optical platform where the active material and the metal nanostructures are integrated together on the same chip.

High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters

We demonstrate a highly-efficient, large-area (1x1 mm2) GaN slab light-emitting diode using a vertically directional emitter produced from constructive interference. The vertical radiation can be coupled effectively into leaky modes from the beginning and thus a high-extraction efficiency can be expected with reduced material absorption. The far-field measurements show that the desired vertical emission profiles are obtained by varying the thickness of the dielectric layer between the emitter and bottom silver mirror. With the combination of a light extractor of a randomly textured surface, the output power was increased approximately 1.4 fold compared to a non-patterned device at a standard current of 350 mA without electrical degradation.