Probing the momentum relaxation time of charge carriers in ultrathin layers with terahertz radiation

Long propagating velocity-controlled Einstein's mirror for terahertz light conversion

We show that Einstein's relativistic mirror with long (hundreds of µm) propagation distance and controllable propagation velocity can be implemented in the form of a dense free carrier front generated by multiphoton absorption of tilted-pulse-front femtosecond laser pulses in a dielectric or semiconductor medium. The velocity control is achieved by varying the pulse front tilt angle. Simulations demonstrate that such fronts can serve as efficient Doppler-type converters of terahertz pulses. In particular, the pulse reflected from a front, generated by three-photon absorption of a Ti:sapphire laser in ZnS, can exhibit strong (up to more than an order of magnitude) pulse compression and spectrum broadening without a noticeable amplitude change. The proposed technique may be used to convert strong low-frequency terahertz pulses, generated by optical rectification of tilted-pulse-front laser pulses, to desirable temporal and spectral characteristics for a variety of applications.

Non-avalanche single photon detection without carrier transit-time delay through quantum capacitive coupling

Searching for innovative approaches to detect single photons remains at the center of science and technology for decades. This paper proposes a zero transit-time, non-avalanche quantum capacitive photodetector to register single photons. In this detector, the absorption of a single photon changes the wave function of a single electron trapped in a quantum dot (QD), leading to a charge density redistribution nearby. This redistribution translates into a voltage signal through capacitive coupling between the QD and the measurement probe. Using InAs QD/AlAs barrier as a model system, the simulation shows that the output signal reaches ~4 mV per absorbed photon, promising for high-sensitivity, ps single-photon detection.

High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics

Low-bandgap CH₃ NH₃ (Pb_x Sn_1-x )I₃ (0 ≤ x ≤ 1) hybrid perovskites (e.g., ≈1.5-1.1 eV) demonstrating high surface coverage and superior optoelectronic properties are fabricated. State-of-the-art photovoltaic (PV) performance is reported with power conversion efficiencies approaching 10% in planar heterojunction architecture with small (<450 meV) energy loss compared to the bandgap and high (>100 cm² V^-1 s^-1 ) intrinsic carrier mobilities.

Strong-Field Resonant Dynamics in Semiconductors

We predict that a direct band gap semiconductor (GaAs) resonantly excited by a strong ultrashort laser pulse exhibits a novel regime: kicked anharmonic Rabi oscillations. In this regime, Rabi oscillations are strongly coupled to intraband motion, and interband transitions mainly take place when electrons pass near the Brillouin zone center where electron populations undergo very rapid changes. The asymmetry of the residual population distribution induces an electric current controlled by the carrier-envelope phase of the driving pulse. The predicted effects are experimentally observable using photoemission and terahertz spectroscopies.