Enhanced light emission from erbium doped silicon nitride in plasmonic metal-insulator-metal structures

Diffraction grating enhanced photoluminescence from etching-free erbium thin films

Micro-structuration by etching is commonly used in integrated optics, adding complex and costly processing steps that can also potentially damage the device performance, owing to degradation of the etched sidewalls. For diffraction grating fabrication, different strategies have been developed to avoid etching, such as layer deposition on a structured surface or grating deposition on top of active layers. However, etching remains one of the best processes for making high aspect ratio diffraction gratings. In this work, we have developed fully structured diffraction gratings (i.e., like fully etched gratings) using lift-off based processing performed in pulsed laser deposited layers, since the combination of both techniques is of great interest for making micro-structures without etching. We have first studied the influence of the lithography doses in the lift-off process, showing that (1) micrometric spatial resolution can be achieved and (2) the sidewall angle can be controlled from 50° to 150° in 0.5 µm thick layers. Using such optimizations, we have then fabricated Er-doped Y₂O₃ uniaxial diffraction gratings with different periods ranging from 3 to 8 µm. The fabricated devices exhibit emission and reflectivity properties as a function of the collection angle in good agreement with the modeling, with a maximum luminescence enhancement of ×15 compared with an unstructured layer at a wavelength of 1.54 µm. This work thus highlights lift-off based processing combined with pulsed laser deposition as a promising technique for etch-free practical applications, such as luminescence enhancement in Er-doped layers.

Effect of Substrate Temperature on Morphological, Structural, and Optical Properties of Doped Layer on SiO2-on-Silicon and Si3N4-on-Silicon Substrate

A high concentration of Er³⁺ without clustering issues is essential in an Er-doped waveguide amplifier as it is needed to produce a high gain and low noise signal. Ultrafast laser plasma doping is a technique that facilitates the blending of femtosecond laser-produced plasma from an Er-doped TeO₂ glass with a substrate to form a high Er³⁺ concentration layer. The influence of substrate temperature on the morphological, structural, and optical properties was studied and reported in this paper. Analysis of the doped substrates using scanning electron microscopy (SEM) confirmed that temperatures up to approximately 400 °C are insufficient for the incoming plasma plume to modify the strong covalent bonds of silica (SiO₂), and the doping process could not take place. The higher temperature used caused the materials from Er-doped tellurite glass to diffuse deeper (except Te with smaller concentration) into silica, which created a thicker film. SEM images showed that Er-doped tellurite glass was successfully diffused in the Si₃N₄. However, the doping was not as homogeneous as in silica.

Efficient Sensitized Photoluminescence from Erbium Chloride Silicate via Interparticle Energy Transfer

In this study, we prepare Erbium compound nanocrystals and Si nanocrystal (Si NC) co-embedded silica film by the sol-gel method. Dual phases of Si and Er chloride silicate (ECS) nanocrystals were coprecipitated within amorphous silica. Effective sensitized emission of Er chloride silicate nanocrystals was realized via interparticle energy transfer between silicon nanocrystal and Er chloride silicate nanocrystals. The influence of density and the distribution of sensitizers and Er compounds on interparticle energy transfer efficiency was discussed. The interparticle energy transfer between the semiconductor and erbium compound nanocrystals offers some important insights into the realization of efficient light emission for silicon-based integrated photonics.

Control of Au nanoantenna emission enhancement of magnetic dipolar emitters by means of VO2 phase change layers

Active, ultra-fast external control of the emission properties at the nanoscale is of great interest for chip-scale, tunable and efficient nanophotonics. Here we investigated the emission control of dipolar emitters coupled to a nanostructure made of an Au nanoantenna, and a thin vanadium dioxide (VO₂) layer that changes from semiconductor to metallic state. If the emitters are sandwiched between the nanoantenna and the VO₂ layer, the enhancement and/or suppression of the nanostructure's magnetic dipole resonance enabled by the phase change behavior of the VO₂ layer can provide a high contrast ratio of the emission efficiency. We show that a single nanoantenna can provide high magnetic field in the emission layer when VO₂ is metallic, leading to high emission of the magnetic dipoles; this emission is then lowered when VO₂ switches back to semiconductor. We finally optimized the contrast ratio by considering different orientation, distribution and nature of the dipoles, as well as the influence of a periodic Au nanoantenna pattern. As an example of a possible application, the design is optimized for the active control of an Er³⁺ doped SiO₂ emission layer. The combination of the emission efficiency increase due to the plasmonic nanoantenna resonances and the ultra-fast contrast control due to the phase-changing medium can have important applications in tunable efficient light sources and their nanoscale integration.

Selective Plasmonic Enhancement of Electric- and Magnetic-Dipole Radiations of Er Ions

Lanthanoid series are unique in atomic elements. One reason is because they have 4f electronic states forbidding electric-dipole (ED) transitions in vacuum and another reason is because they are very useful in current-day optical technologies such as lasers and fiber-based telecommunications. Trivalent Er ions are well-known as a key atomic element supporting 1.5 μm band optical technologies and also as complex photoluminescence (PL) band deeply mixing ED and magnetic-dipole (MD) transitions. Here we show large and selective enhancement of ED and MD radiations up to 83- and 26-fold for a reference bulk state, respectively, in experiments employing plasmonic nanocavity arrays. We achieved the marked PL enhancement by use of an optimal design for electromagnetic (EM) local density of states (LDOS) and by Er-ion doping in deep subwavelength precision. We moreover clarify the quantitative contribution of ED and MD radiations to the PL band, and the magnetic Purcell effect in the PL-decay temporal measurement. This study experimentally demonstrates a new scheme of EM-LDOS engineering in plasmon-enhanced photonics, which will be a key technique to develop loss-compensated and active plasmonic devices.

Use of a gold reflecting-layer in optical antenna substrates for increase of photoluminescence enhancement

We report on a straightforward way to increase the photoluminescence enhancement of nanoemitters induced by optical nanotantennas. The nanoantennas are placed above a gold film-silica bilayer, which produces a drastic increase of the scattered radiation power and near field enhancement. We demonstrate this increase via photoluminescence enhancement using an organic emitter of low quantum efficiency, Tetraphenylporphyrin (TPP). An increase of the photoluminescence enhancement by a factor larger than three is observed compared to antennas without the reflecting-layer. In addition, we study the possibility of influencing the polarization of the light emitted by utilizing asymmetry of dimer antennas.

X-shaped quasi-3D plasmonic nanostructure arrays for enhancing electric field and Raman scattering

We propose and demonstrate strongly enhancing electric field and Raman scattering with a large tolerance to the light incident angle and polarization by using x-shaped quasi-3D plasmonic nanostructure arrays (X-Q3D-PNAs). The finite-difference time-domain simulations were used to study the reflectance spectra and electric field profiles of X-Q3D-PNAs. Results show that both surface plasmon polaritons and localized surface plasmon polaritons (LSPPs) can be generated at the metal/dielectric interfaces of the top gold thin film with square grating x-shaped nanoholes. The resonance of the LSPPs generated at the gold islands formed between x-shaped nanoholes at the top gold thin film greatly enhance the electric fields at the tips of the cross-sectors of the x-shaped nanoholes. Both plasmon resonances and electric field enhancements are affected by the structural dimensions. The strong electric field enhancement and the large tolerance to the laser polarization were demonstrated by surface-enhanced Raman scattering experiments. This unique plasmonic property of X-Q3D-PNAs could be attractive for photovoltaics and biosensing applications.

Strong enhancement of magnetic dipole emission in a multilevel electronic system

The Purcell effect is commonly used to increase light emission by enhancing the radiative decay of electric dipole transitions. In this Letter, we demonstrate that the opposite effect, namely, the inhibition of electric dipole transitions, can be used to strongly enhance light emission via magnetic dipole transitions. Specifically, by exploiting the differing symmetries of competitive electric and magnetic dipole transitions in trivalent europium, we demonstrate a fourfold enhancement of the far-field emission from the (5)D(0)→(7)F(1) magnetic dipole transition in trivalent europium. We show that this strong enhancement is well predicted by a three-level model that couples the individual Purcell enhancement factors of competitive transitions from the same excited state.

Light scattering, field localization and local density of states in co-axial plasmonic nanowires

Based on analytical scattering theory, we develop a multipolar expansion method to investigate systematically the near-field enhancement, far-field scattering and Local Density of States (LDOS) spectra in concentric metal-insulator-metal (MIM) cylindrical nanostructures, or coaxial plasmonic nanowires (CPNs). We demonstrate that these structures support distinctive plasmonic resonances with strongly reduced scattering in the far-field zone and significant electric field enhancement in deep sub-wavelength dielectric regions. Additionally, we study systematically the effects of geometrical parameters and dielectric index on the near-field and far-field plasmonic response of CPNs in the visible and near infrared spectral range. Finally, we demonstrate that CPNs provide a convenient approach for engineering strong (almost three orders of magnitude) LDOS enhancement in sub-wavelength dielectric gaps at multiple frequencies. These results enable the engineering of multiband optical detectors and CPNs-based light emitters with simultaneously enhanced excitation and emission rates for nanoplasmonics.

Spontaneous decay of a single quantum dot coupled to a metallic slot waveguide in the presence of leaky plasmonic modes

We numerically investigate the coupling efficiency of a single self-assembled quantum dot to a metallic slot waveguide in the presence of leaky plasmonic modes. Leaky plasmonic modes refer to radiation modes with plasmonic features, resulting from the inhomogeneity of the dielectric environment in which the metallic slot waveguide is embedded. Compared to the ideal case of a homogenous dielectric environment, the coupling efficiency of an emitter to a metallic slot waveguide is significantly reduced. We attribute the reduction to the coupling to leaky plasmonic modes. By increasing the refractive index of the coating layer to minimize the impacts from the leaky plasmonic modes, we find that the coupling efficiency of the quantum dot to the single mode supported by the metallic slot waveguide can be enhanced by more than a factor 2.