Measurement of the coupling constant in a two-frequency VECSEL

Bi-frequency operation in a membrane external-cavity surface-emitting laser

We report on the achievement of continuous wave bi-frequency operation in a membrane external-cavity surface-emitting laser (MECSEL), which is optically pumped with up to 4 W of 808 nm pump light. The presence of spatially specific loss of the intra-cavity high reflectivity mirror allows loss to be controlled on certain transverse cavity modes. The regions of spatially specific loss are defined through the removal of Bragg layers from the surface of the cavity high reflectivity mirror in the form of crosshair patterns with undamaged central regions, which are created using a laser ablation system incorporating a digital micromirror device (DMD). By aligning the laser cavity mode with the geometric centre of the loss patterns, the laser simultaneously operated on two Hermite-Gaussian spatial modes: the fundamental HG00 and the higher order HG11 mode. We demonstrate bi-frequency operation over a range of pump powers and sizes of spatial loss features, with a wavelength separation of approximately 5 nm centred at 1005 nm.

Dual-frequency fundamental-mode NPRO laser for low-noise microwave generation

Monolithic nonplanar ring oscillators (NPROs) have achieved great success in industry, scientific applications and space missions due to their excellent narrow-linewidth, low-noise, high beam-quality, lightweight and compact performances. Here, we show that stable dual-frequency or multi-frequency fundamental-mode (DFFM or MFFM) laser can be stimulated directly by tunning pump divergence-angle and beam-waist injected to NPRO. The DFFM laser has a frequency deviation of one free spectral range of the resonator and thus can be utilized for pure microwave generation by common-mode-rejection. To demonstrate the purity of the microwave signal, a theoretical phase noise model is established, and the phase noise and the frequency tunability of the microwave signal are experimentally studied. Single sideband phase noise for a 5.7 GHz carrier is measured as low as -112 dBc/Hz at 10 kHz offset, and -150 dBc/Hz at 10 MHz offset in the free running condition of the laser, which outperforms its counterparts from dual-frequency Laguerre-Gaussian (LG) modes. The frequency of the microwave signal can be efficiently tunned through two channels, with frequency tunning coefficients of 15 Hz/V by piezo, and -60.5 kHz/K by temperature, respectively. We expect that such compact, tunable, low-cost and low-noise microwave sources can facilitate multiple applications including miniaturized atomic clocks, communication and radar, etc.

Modeling the Lamb mode-coupling constant of quantum well semiconductor lasers

We theoretically compute the coupling constant C between two emission modes of an extended cavity laser with a multiple quantum-well active layer. We use an optimized Monte Carlo model based on the Markov chain that describes the elementary events of carriers and photons over time. This model allows us to evaluate the influence on C of the transition from a class A laser to a class B laser and illustrates that the best stability of dual-mode lasers is obtained with the former. In addition, an extension of the model makes it possible to evaluate the influence of different mode profiles in the cavity as well as the spatial diffusion of the carriers and/or the inhomogeneity of the temperature. These results are in very good agreement with previous experimental results, showing the independence of C with respect to the beating frequency and its evolution versus the spatial mode splitting in the gain medium.

Semiconductor disk laser in bi-frequency operation by laser ablation micromachining of a laser mirror

We present bi-frequency continuous wave oscillation in a semiconductor disk laser through direct writing of loss-inducing patterns onto an intra-cavity high reflector mirror. The laser is a Vertical External Cavity Surface Emitting Laser which is optically pumped by up to 1.1 W of 808 nm light from a fibre coupled multi-mode diode laser, and oscillates on two Hermite-Gaussian spatial modes simultaneously, achieving wavelength separations between 0.2 nm and 5 nm around 995 nm. We use a Digital Micromirror Device (DMD) enabled laser ablation system to define spatially specific loss regions on a laser mirror by machining away the Bragg layers from the mirror surface. The ablated pattern is comprised of two orthogonal lines with the centermost region undamaged, and is positioned in the laser cavity so as to interact with the lasing mode, thereby promoting the simultaneous oscillation of the fundamental and a higher order spatial mode. We demonstrate bi-frequency oscillation over a range of mask gap sizes and pump powers.

Direct measurement of the spectral dependence of Lamb coupling constant in a dual frequency quantum well-based VECSEL

Spectral dependence of Lamb coupling constant C is experimentally investigated in an InGaAlAs Quantum Wells active medium. An Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser is designed to sustain the oscillation of two orthogonally polarized modes sharing the same active region while separated in the rest of the cavity. This laser design enables to tune independently the two wavelengths and, at the same time, to apply differential losses in order to extract without any extrapolation the actual coupling constant. C is found to be almost constant and equal to 0.84 ± 0.02 for frequency differences between the two eigenmodes ranging from 45 GHz up to 1.35 THz.

Non-equilibrium dynamics in the dual-wavelength operation of vertical external-cavity surface-emitting lasers

Microscopic many-body theory coupled with Maxwell's equation is used to study dual-wavelength operation in vertical external-cavity surface-emitting lasers. The intrinsically dynamic nature of coexisting emission wavelengths in semiconductor lasers is associated with characteristic non-equilibrium carrier dynamics, which causes significant deformations of the quasi-equilibrium gain and carrier inversion. Extended numerical simulations are employed to efficiently investigate the parameter space to identify the regime for dual-wavelength operation. Using a frequency selective intracavity etalon, two families of modes are stabilized with dynamical interchange of the strongest emission peaks. For this operation mode, anti-correlated intensity noise is observed in agreement with the experiment. A method using effective frequency selective filtering is suggested for stabilization of genuine dual-wavelength output.

VSPIN: a new model relying on the vectorial description of the laser field for predicting the polarization dynamics of spin-injected V(e)CSELs

A new vectorial model (VSPIN) based on the Jones formalism is proposed to describe the polarization dynamics of spin injected V(e)CSELs. This general modelling framework accounts for spin injection effects as a gain circular dichroism in the active medium and provides guidelines for developing functional spin-controlled lasers. We investigate the detrimental role of phase anisotropy on polarization switching and show that it can be overcome by preparing the laser cavity to achieve efficient polarization switching under low effective spin injection. The VSPIN model predictions have been confirmed experimentally and explain the polarization behavior of spin-VCSELs reported in the literature.

Compensation of the residual linear anisotropy of phase in a vertical-external-cavity-surface-emitting laser for spin injection

We report on the compensation of the linear anisotropy of phase in a vertical-external-cavity surface-emitting laser from 21 to 0.5 mrad with an intracavity PLZT electro-optical ceramic. It allows dynamic and accurate control of the laser linear anisotropy, as well as dynamic control of the laser polarization eigenstates. At the birefringence compensation point, we observe an elliptical polarization state with 41° of ellipticity, rotated from its initial position of 32°. The experimental observations are in close agreement with the theoretical predictions. Finally, we are able to demonstrate control of the polarization state with spin injection.

Polarization bistability associated with 4F3/2→4I11/2 and 4F3/2→4I13/2 transitions in Nd:YVO4 laser with intra-cavity periodically poled lithium niobate Bragg modulator

We experimentally demonstrate polarization bistability in a dual-wavelength Nd:YVO4 laser at 1064 nm (4F3/2→4I11/2) and 1342 nm (4F3/2→4I13/2) by using an intra-cavity electro-optic periodically poled lithium niobate (PPLN) Bragg modulator to control the loss at 1064 nm. An inverse hysteresis switch was observed between 1064 nm and 1342 nm lasers with orthogonal polarizations by increasing and reducing the loss induced by the PPLN. The size of the hysteresis increased with increasing pump power. This paper provides an explanation based on cross-gain saturation for this bistable behavior of polarization.

Accurate measurement of the residual birefringence in VECSEL: Towards understanding of the polarization behavior under spin-polarized pumping

In this paper we report birefringence measurements of an optically pumped (100)-oriented InGaAs/GaAsP multiple quantum well (MQWs) Vertical External Cavity Surface Emitting Laser (VECSEL) in oscillating conditions. The proposed technique relies on the measurement in the microwave domain of the beatnote between the oscillating mode and the amplified spontaneous emission of the cross-polarized non-lasing field lying in the following longitudinal mode. This technique is shown to offer extremely high sensitivity and accuracy enabling to track the amount of residual birefringence according to the laser operation conditions. The experience fits within the broader framework of polarization selection in spin-injected lasers.

14XX nm-wavelength electrically-pumped VECSELs fabricated by wafer fusion

We report on the design, fabrication and characterization of electrically pumped vertical external cavity surface emitting lasers (EP-VECSELs) emitting at 1470 nm. We demonstrate 6.2 mW of CW output power, which represents the highest power value reported so far for EP-VECSELs in the 14XX nm and 15XX nm wavelength bands.

Intensity noise correlations in a two-frequency VECSEL

We present an experimental and theoretical study of the intensity noise correlation between the two orthogonally polarized modes in a dual frequency Vertical External Cavity Surface Emitting Laser (VECSEL). The dependence of the noise correlation spectra on the non-linear coupling between the two orthogonally polarized modes is put into evidence. Our results show that for small coupling the noise correlation amplitude and phase spectra remain nearly flat (around -6 dB and 0° respectively) within the frequency range of our interest (from 100 kHz to 100 MHz). But for higher values of the coupling constant the low frequency behaviors (below 1-2 MHz) of the correlation amplitude and phase spectra are drastically changed, whereas above this cut-off frequency (1-2 MHz) the correlation spectra are almost independent of coupling strength. The theoretical model is based on the assumptions that the only source of noise in the frequency range of our interest for the two modes are pump noises, which are white noises of equal amplitude but partially correlated.

Observation of noise phase locking in a single-frequency VECSEL

We present an experimental observation of phase locking effects in the intensity noise spectrum of a semiconductor laser. These noise correlations are created in the medium by coherent carrier-population oscillations induced by the beatnote between the lasing and non-lasing modes of the laser. This phase locking leads to a modification of the intensity noise profile at around the cavity free-spectral-range value. The noise correlations are evidenced by varying the relative phase shift between the laser mode and the non-lasing adjacent side modes.

1.3 µm Raman-bismuth fiber amplifier pumped by semiconductor disk laser

A hybrid Raman-bismuth fiber amplifier pumped in co-propagation configuration by a single 1.22 µm semiconductor disk laser is presented. The unique attribute of this dual-gain system is that both amplifiers require the pump source with the same wavelength because pump-Stokes spectral shift in 1.3 µm Raman amplifier and pump-gain bandwidth separation in 1.3 µm bismuth fiber amplifier have the same value. Residual pump power at the output of Raman amplifier in this scheme is efficiently consumed by bismuth-doped fiber thus increasing the overall conversion efficiency. The small-signal gain of 18 dB at 1.3 W of pump power has been achieved for hybrid scheme which is by 9 dB higher as compared with isolated Raman amplifier without bismuth fiber. Low noise performance of pump semiconductor disk laser with RIN of -150 dB/Hz combined with nearly diffraction-limited beam quality and Watt-level output powers allows for efficient core-pumping of a single-mode fiber amplifier systems and opens up new opportunities for amplification in O-band spectral range.

Low-noise Raman fiber amplifier pumped by semiconductor disk laser

A 1.3 µm Raman fiber amplifier pumped by 1.22 µm semiconductor disk laser in co-propagation geometry is demonstrated. Measured relative intensity noise of -148 dB/Hz over frequency range up to 3.5 GHz was measured at 900 mW of pump power. 9 dB gain was achieved with co-propagating pumping geometry with less than 2 dB additional noise induced by amplifier to the signal. Nearly shot-noise-limited operation of semiconductor disk laser combined with the diffraction-limited beam allows for efficient core-pumping of the single-mode fiber Raman amplifiers and represents a highly practical approach which takes full advantage of co-propagating pumping.

1.38-µm mode-locked Raman fiber laser pumped by semiconductor disk laser

A mode-locked Raman fiber laser pumped by 1.3 µm semiconductor disk laser is demonstrated. Direct Watt-level core-pumping of the single-mode fiber Raman lasers and amplifiers with low-noise disk lasers is demonstrated to represent a highly practical solution as compared with conventional scheme using pumping by Raman wavelength convertors. Raman laser employing passive mode-locking by nonlinear polarization evolution in normal dispersion regime produces stable pedestal-free 1.97 ps pulses at 1.38 µm. Using semiconductor disk lasers capable of producing high power with diffraction-limited beam allows Raman gain to be obtained at virtually any wavelength of interest owing to spectral versatility of semiconductor gain materials and wafer-fusing technology.

Raman fiber laser pumped by a semiconductor disk laser and mode locked by a semiconductor saturable absorber mirror

A 1.6µm mode-locked Raman fiber laser pumped by a 1480nm semiconductor disk laser is demonstrated. Watt-level core pumping of the single-mode fiber Raman lasers with low-noise disk lasers together with semiconductor saturable absorber mirror mode locking represents a highly practical solution for short-pulse operation.

Gain coupling of class A semiconductor lasers

We report on the development of a gain-coupled class A semiconductor laser for dual-wavelength generation via optical switching. A vertical external cavity surface emitting laser (VECSEL) structure is used, because it provides a flexible platform for high-power, high-brightness output in the near-IR and visible ranges. For the first time (to our knowledge), two VECSEL cavities sharing a common gain region are studied. Because the cavities are in competition for common carriers, birefringent filters in the external cavity control the laser cavity thresholds; this configuration demonstrates the possibility of switching between the two cavities, which can operate at different wavelengths. However, in this Letter we also show, numerically and experimentally, that with the consideration of spontaneous emission, it is possible to maintain simultaneous lasing in each cavity at a different wavelength.