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Wang M, Yu Y, Prucnal S, Berencén Y, Shaikh MS, Rebohle L, Khan MB, Zviagin V, Hübner R, Pashkin A, Erbe A, Georgiev YM, Grundmann M, Helm M, Kirchner R, Zhou S. Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon. NANOSCALE 2022; 14:2826-2836. [PMID: 35133384 DOI: 10.1039/d1nr07274a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior to traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as fabrication challenges, such as tuning the spectral resonance positions into mid- to far-infrared regions, and the compatibility issue with the existing complementary metal-oxide-semiconductor (CMOS) manufacturing platform. Here, we demonstrate the occurrence of mid-infrared localized surface plasmon resonances (LSPR) in thin Si films hyperdoped with the known deep-level impurity tellurium. We show that the mid-infrared LSPR can be further enhanced and spectrally extended to the far-infrared range by fabricating two-dimensional arrays of micrometer-sized antennas in a Te-hyperdoped Si chip. Since Te-hyperdoped Si can also work as an infrared photodetector, we believe that our results will unlock the route toward the direct integration of plasmonic sensors with the on-chip CMOS platform, greatly advancing the possibility of mass manufacturing of high-performance plasmonic sensing systems.
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Affiliation(s)
- Mao Wang
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany.
| | - Ye Yu
- Institute of Semiconductors and Microsystems, Technische Universität Dresden, 01062 Dresden, Germany.
| | - Slawomir Prucnal
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany.
| | - Yonder Berencén
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany.
| | - Mohd Saif Shaikh
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany.
| | - Lars Rebohle
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany.
| | - Muhammad Bilal Khan
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany.
| | - Vitaly Zviagin
- Felix-Bloch-Institut für Festkörperphysik, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany
| | - René Hübner
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany.
| | - Alexej Pashkin
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany.
| | - Artur Erbe
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany.
- Centre for Advancing Electronics Dresden (CfAED), Technische Universität Dresden, 01062 Dresden, Germany
| | - Yordan M Georgiev
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany.
- Institute of Electronics at the Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria
| | - Marius Grundmann
- Felix-Bloch-Institut für Festkörperphysik, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany
| | - Manfred Helm
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany.
- Institut für Angewandte Physik (IAP), Technische Universität Dresden, 01062 Dresden, Germany
| | - Robert Kirchner
- Institute of Semiconductors and Microsystems, Technische Universität Dresden, 01062 Dresden, Germany.
- Centre for Advancing Electronics Dresden (CfAED), Technische Universität Dresden, 01062 Dresden, Germany
| | - Shengqiang Zhou
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany.
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Bijalwan A, Rastogi V. Sensitivity enhancement of a conventional gold grating assisted surface plasmon resonance sensor by using a bimetallic configuration. APPLIED OPTICS 2017; 56:9606-9612. [PMID: 29240105 DOI: 10.1364/ao.56.009606] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2017] [Accepted: 11/06/2017] [Indexed: 06/07/2023]
Abstract
A surface plasmon resonance (SPR)-based refractive index sensor using a silver grating fabricated over the gold film is proposed. The performance of the sensor has been evaluated on the basis of sensitivity, full width half maximum (FWHM), and dip strength of the reflection spectrum. Rigorous coupled wave analysis has been utilized to study the effect of grating parameters on sensing performance. Our systematic analysis exhibits that inappropriate grating parameters may lead to poor performance of the sensor. Sensitivity of the conventional gold grating (grating engraved in gold) assisted SPR sensor is obtained to be 321°/RIU. Further, we have shown that sensitivity and FWHM could be improved by using a bimetallic structure that consists of a silver grating on a thin gold film and thereby increases the quality factor. Sensitivity of the proposed structure is 346°/RIU with a quality factor more than 97.46 RIU-1.
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All-Silicon Ultra-Broadband Infrared Light Absorbers. Sci Rep 2016; 6:38589. [PMID: 27924933 PMCID: PMC5141492 DOI: 10.1038/srep38589] [Citation(s) in RCA: 44] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/12/2016] [Accepted: 11/11/2016] [Indexed: 11/25/2022] Open
Abstract
Absorbing infrared radiation efficiently is important for critical applications such as thermal imaging and infrared spectroscopy. Common infrared absorbing materials are not standard in Si VLSI technology. We demonstrate ultra-broadband mid-infrared absorbers based purely on silicon. Broadband absorption is achieved by the combined effects of free carrier absorption, and vibrational and plasmonic absorption resonances. The absorbers, consisting of periodically arranged silicon gratings, can be fabricated using standard optical lithography and deep reactive ion etching techniques, allowing for cost-effective and wafer-scale fabrication of micro-structures. Absorption wavebands in excess of 15 micrometers (5–20 μm) are demonstrated with more than 90% average absorptivity. The structures also exhibit broadband absorption performance even at large angles of incidence (θ = 50°), and independent of polarization.
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Passaro VMN, de Tullio C, Troia B, La Notte M, Giannoccaro G, De Leonardis F. Recent advances in integrated photonic sensors. SENSORS (BASEL, SWITZERLAND) 2012; 12:15558-98. [PMID: 23202223 PMCID: PMC3522976 DOI: 10.3390/s121115558] [Citation(s) in RCA: 94] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/21/2012] [Revised: 10/30/2012] [Accepted: 11/05/2012] [Indexed: 12/11/2022]
Abstract
Nowadays, optical devices and circuits are becoming fundamental components in several application fields such as medicine, biotechnology, automotive, aerospace, food quality control, chemistry, to name a few. In this context, we propose a complete review on integrated photonic sensors, with specific attention to materials, technologies, architectures and optical sensing principles. To this aim, sensing principles commonly used in optical detection are presented, focusing on sensor performance features such as sensitivity, selectivity and rangeability. Since photonic sensors provide substantial benefits regarding compatibility with CMOS technology and integration on chips characterized by micrometric footprints, design and optimization strategies of photonic devices are widely discussed for sensing applications. In addition, several numerical methods employed in photonic circuits and devices, simulations and design are presented, focusing on their advantages and drawbacks. Finally, recent developments in the field of photonic sensing are reviewed, considering advanced photonic sensor architectures based on linear and non-linear optical effects and to be employed in chemical/biochemical sensing, angular velocity and electric field detection.
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Affiliation(s)
- Vittorio M. N. Passaro
- Photonics Research Group, Dipartimento di Elettrotecnica ed Elettronica, Politecnico di Bari, Via Edoardo Orabona 4, 70125 Bari, Italy; E-Mails: (C.T.); (B.T.); (M.L.N.); (G.G.); (F.D.L.)
| | - Corrado de Tullio
- Photonics Research Group, Dipartimento di Elettrotecnica ed Elettronica, Politecnico di Bari, Via Edoardo Orabona 4, 70125 Bari, Italy; E-Mails: (C.T.); (B.T.); (M.L.N.); (G.G.); (F.D.L.)
| | - Benedetto Troia
- Photonics Research Group, Dipartimento di Elettrotecnica ed Elettronica, Politecnico di Bari, Via Edoardo Orabona 4, 70125 Bari, Italy; E-Mails: (C.T.); (B.T.); (M.L.N.); (G.G.); (F.D.L.)
| | - Mario La Notte
- Photonics Research Group, Dipartimento di Elettrotecnica ed Elettronica, Politecnico di Bari, Via Edoardo Orabona 4, 70125 Bari, Italy; E-Mails: (C.T.); (B.T.); (M.L.N.); (G.G.); (F.D.L.)
| | - Giovanni Giannoccaro
- Photonics Research Group, Dipartimento di Elettrotecnica ed Elettronica, Politecnico di Bari, Via Edoardo Orabona 4, 70125 Bari, Italy; E-Mails: (C.T.); (B.T.); (M.L.N.); (G.G.); (F.D.L.)
| | - Francesco De Leonardis
- Photonics Research Group, Dipartimento di Elettrotecnica ed Elettronica, Politecnico di Bari, Via Edoardo Orabona 4, 70125 Bari, Italy; E-Mails: (C.T.); (B.T.); (M.L.N.); (G.G.); (F.D.L.)
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Wang L, Clavero C, Yang K, Radue E, Simons MT, Novikova I, Lukaszew RA. Bulk and surface plasmon polariton excitation in RuO₂ for low-loss plasmonic applications in NIR. OPTICS EXPRESS 2012; 20:8618-8628. [PMID: 22513571 DOI: 10.1364/oe.20.008618] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Transition-metal oxides, such as RuO₂, offer an exciting alternative to conventional metals for metamaterials and plasmonic applications due to their low optical losses in the visible and near-infrared ranges. In this manuscript we report observation of optically excited surface plasmon polaritons (SPPs) and bulk plasmons in RuO₂ thin films grown using DC reactive magnetron sputtering on glass and TiO₂ (001) substrates. We show that both plasmon modes can exist simultaneously for the infrared region of the optical spectrum, while only the bulk plasmons are supported at higher optical frequencies. Finally, we demonstrate that the film properties can be tailored to favor excitation of either SPP or bulk plasmons.
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Affiliation(s)
- L Wang
- Department of Physics, College of William & Mary, Williamsburg, VA 23187, USA.
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