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Kim D, Harfouche M, Wang H, Santis CT, Vilenchik Y, Satyan N, Rakuljic G, Yariv A. Consequences of quantum noise control for the relaxation resonance frequency and phase noise in heterogeneous Silicon/III-V lasers. Sci Rep 2022; 12:312. [PMID: 35013333 PMCID: PMC8748436 DOI: 10.1038/s41598-021-03314-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/04/2021] [Accepted: 11/25/2021] [Indexed: 11/09/2022] Open
Abstract
We have recently introduced a new semiconductor laser design which is based on an extreme, 99%, reduction of the laser mode absorption losses. In previous reports, we showed that this was achieved by a laser mode design which confines the great majority of the modal energy (> 99%) in a low-loss Silicon guiding layer rather than in highly-doped, thus lossy, III–V p\documentclass[12pt]{minimal}
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\begin{document}$${}^+$$\end{document}+ and n\documentclass[12pt]{minimal}
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\begin{document}$${}^+$$\end{document}+ layers, which is the case with traditional III–V lasers. The resulting reduced electron-field interaction was shown to lead to a commensurate reduction of the spontaneous emission rate by the excited conduction band electrons into the laser mode and thus to a reduction of the frequency noise spectral density of the laser field often characterized by the Schawlow–Townes linewidth. In this paper, we demonstrate theoretically and present experimental evidence of yet another major beneficial consequence of the new laser design: a near total elimination of the contribution of amplitude-phase coupling (the Henry \documentclass[12pt]{minimal}
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\begin{document}$$\alpha $$\end{document}α parameter) to the frequency noise at “high” frequencies. This is due to an order of magnitude lowering of the relaxation resonance frequency of the laser. Here, we show that the practical elimination of this coupling enables yet another order of magnitude reduction of the frequency noise at high frequencies, resulting in a quantum-limited frequency noise spectral density of 130 Hz\documentclass[12pt]{minimal}
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\begin{document}$$^2$$\end{document}2/Hz (linewidth of 0.4 kHz) for frequencies beyond the relaxation resonance frequency 680 MHz. This development is of key importance in the development of semiconductor lasers with higher coherence, particularly in the context of integrated photonics with a small laser footprint without requiring any sort of external cavity.
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Affiliation(s)
- Dongwan Kim
- Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, CA, 91125, USA.
| | - Mark Harfouche
- Department of Electrical Engineering, California Institute of Technology, Pasadena, CA, 91125, USA
| | - Huolei Wang
- Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, CA, 91125, USA
| | - Christos T Santis
- Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, CA, 91125, USA
| | - Yaakov Vilenchik
- Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, CA, 91125, USA
| | | | | | - Amnon Yariv
- Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, CA, 91125, USA.,Department of Electrical Engineering, California Institute of Technology, Pasadena, CA, 91125, USA
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Abolghasem P, Dardis L, Diba A, Frost T, Ellis B, Going R, Xu X, Dentai A, Chuang LC, Corzine S, Murthy S, Kuntz M, Zhang J, Samra P, Lal V, Pavinski D, Butrie T, DeMars S, Rahn J, Dominic V, Evans P, Ziari M, Kish F. Monolithically integrated L-band PICs and transceiver modules with 6λ x 200 Gbps (1.2 Tbps) for C + L band communication systems. OPTICS EXPRESS 2019; 27:16483-16492. [PMID: 31252873 DOI: 10.1364/oe.27.016483] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2019] [Accepted: 05/13/2019] [Indexed: 06/09/2023]
Abstract
We present monolithically integrated multi-channel coherent L-band transmitter (Tx) and receiver (Rx) photonic integrated circuits (PICs) on InP substrates. The L-band PICs are able to provide post-forward error correction (FEC), error-free operation for dual-polarization (DP) 16-QAM coherent transmission at 33 Gbaud. These transceivers operate at 200 Gbps per channel and support 1.2 Tbps aggregate capacity per 6 channel PIC. We also demonstrate in this work a C + L band communication system with two C-band superchannels (2 x 6λ) and three L-band superchannels (3 x 6λ) over a 600 km link. The received signals all have Q > 7.7 dB, which is well above the error-free threshold of the FEC used in this work.
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Arafin S, Simsek A, Lu M, Rodwell MJ, Coldren LA. Heterodyne locking of a fully integrated optical phase-locked loop with on-chip modulators. OPTICS LETTERS 2017; 42:3745-3748. [PMID: 28957117 DOI: 10.1364/ol.42.003745] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/07/2017] [Accepted: 08/28/2017] [Indexed: 06/07/2023]
Abstract
We design and experimentally demonstrate a highly integrated heterodyne optical phase-locked loop (OPLL) consisting of an InP-based coherent photonic receiver, high-speed feedback electronics, and an RF synthesizer. Such coherent photonic integrated circuits contain two widely tunable lasers, semiconductor optical amplifiers, phase modulators, and a pair of balanced photodetectors. Offset phase-locking of the two lasers is achieved by applying an RF signal to an on-chip optical phase modulator following one of the lasers and locking the other one to a resulting optical sideband. Offset locking frequency range >16 GHz is achieved for such a highly sensitive OPLL system which can employ up to the third-order-harmonic optical sidebands for locking. Furthermore, the rms phase error between the two lasers is measured to be 8°.
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Hosseini A, Lu M, Going R, Samra P, Amiralizadeh S, Nguyen A, Rahn J, Dominic V, Awadalla A, Corzine S, Kim N, Summers J, Gold D, Tang J, Tsai HS, Weidner K, Abolghasem P, Lauermann M, Zhang J, Yan J, Vallaitis T, Gilardi G, Dentai A, Modi N, Evans P, Lal V, Kuntz M, Pavinski D, Ziari M, Osenbach J, Missey M, James A, Butrie T, Sun H, Wu KT, Mitchell M, Reffle M, Welch D, Kish F. Extended C-band tunable multi-channel InP-based coherent receiver PICs. OPTICS EXPRESS 2017; 25:18853-18862. [PMID: 29041077 DOI: 10.1364/oe.25.018853] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2017] [Accepted: 07/17/2017] [Indexed: 06/07/2023]
Abstract
Fully integrated monolithic, multi-channel InP-based coherent receiver PICs and transceiver modules with extended C-band tunability are described. These PICs operate at 33 and 44 Gbaud per channel under dual polarization (DP) 16-QAM modulation. Fourteen-channel monolithic InP receiver PICs show integration and data rate scaling capability to operate at 44 Gbaud under DP 16-QAM modulation for combined 4.9 Tb/s total capacity. Six channel simultaneous operation of a commercial transceiver module at 33 Gbaud is demonstrated for a variety of modulation formats including DP 16-QAM for >1.2Tbit/s aggregate data capacity.
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