Role of rigidity and temperature in the kinetics of photodarkening in Ge(x)As(45-x)Se55 thin films

Engineering the optical response of a-Se thin films by employing morphological disorder

In this article, we experimentally demonstrate for the first time that photobleaching (PB) can be induced in morphologically disordered a-Se thin film, an observation which is opposite of the previously well-known photodarkening (PD) effects in morphologically ordered films. Further, the optical response of the film shows many fold increase with increase in control beam intensity. To explain the observed extraordinary phenomenon, we have proposed a model based on the morphological disorder of a modified surface and its subsequent photo-annealing. Our results demonstrate an efficient and yet simple new method to engineer the optical response of photosensitive thin films. We envision that this process can open up many avenues in optical field-enhanced absorption-based technologies.

Positive and negative phototunability of chalcogenide (AMTIR-1) microdisk resonator

We demonstrate externally photo-induced partially-reversible tuning of the resonance of a microdisk made of AMTIR-1 (Ge(33)As(12)Se(55)). We have achieved for the first time, to the best of our knowledge, both positive and negative shift in a microresonator with external tuning. A positive resonance shift of 1 nm and a negative resonance shift of 0.5 nm on a single microdisk has been measured. We have found that this phenomenon is due to initial photo-expansion of the microdisk followed by the photo-bleaching of the AMTIR-1. The observed shifts and the underlying phenomenon is controllable by varying the illumination power (i.e. the low power illumination suppresses the photobleaching process). We measure a loaded quality factor of 1.2x10(5) at 1550nm (limited by the measuring instrument). This holds promise for non-contact low power reversible-tunning of photonic circuit elements.

First observation of the temperature-dependent light-induced response of Ge(25)As(10)Se(65) thin films

Ge-rich ternary chalcogenide glasses (ChGs) exhibit photobleaching (PB) when illuminated with bandgap light. This effect originates from the combined effects of intrinsic structural changes and photo-oxidation. In a sharp contradiction to previous observations, in this Letter, we demonstrate, for the first time, that Ge-rich Ge(25)As(10)Se(65) ChG thin films exhibit photodarkening (PD) at 20 K and PB at 300 and 420 K after having been continuously illuminated for ∼3 hours. The temporal evolution of PD/PB shows distinct characteristics at the temperature of illumination, and provides valuable information on the light-induced structural changes. Furthermore, structure-specific far-infrared (FIR) absorption measurements give direct evidence of different structural units involved in PD/PB at the contrasting temperatures. By comparing the light-induced effects in vacuum and air, we conclude that intrinsic structural changes dominate over photo-oxidation in the observed PB in Ge(25)As(10)Se(65) ChG thin films.

Nanosecond light induced, thermally tunable transient dual absorption bands in a-Ge₅As₃₀Se₆₅ thin film

In this article, we report the first observation of nanosecond laser induced transient dual absorption bands, one in the bandgap (TA₁) and another in the sub-bandgap (TA₂) regions of a-Ge₅As₃₀Se₆₅ thin films. Strikingly, these bands are thermally tunable and exhibit a unique contrasting characteristic: the magnitude of TA₁ decreases while that of TA₂ increases with increasing temperature. Further, the decay kinetics of these bands is strongly influenced by the temperature, which signifies a strong temperature dependent exciton recombination mechanism. The induced absorption shows quadratic and the decay time constant shows linear dependence on the laser beam fluence.

Role of Ge:As ratio in controlling the light-induced response of a-Ge(x)As(35-x)Se65 thin films

In this paper, we present interesting results on the quantification of photodarkening (PD), photobleaching (PB) and transient PD (TPD) in a-Ge_xAs_35−xSe₆₅ thin films as a function of network rigidity. Composition dependent light-induced responses of these samples indicate that there exist two parallel competing mechanisms of instantaneous PD arising from the As part of the network, and PB arising from the Ge part of the network. Raman spectra of the as-prepared and illuminated samples provide first direct evidence of the light-induced structural changes: an increase in AsSe_3/2 pyramidal and GeSe_4/2 corner-sharing tetrahedra units together with new Ge-O bond formation and decrease in energetically unstable edge sharing GeSe_4/2 tetrahedra. Importantly, for a fixed Se concentration, Ge:As ratio plays the critical role in controlling the net light-induced response rather than the much believed rigidity of the glassy network.

Ultrafast light induced unusually broad transient absorption in the sub-bandgap region of GeSe2 thin film

In this paper, we show for the first time that ultrafast light illumination can induce an unusually broad transient optical absorption (TA), spanning of ≈ 200 nm in the sub-bandgap region of chalcogenide GeSe₂ thin films, which we interpret as being a manifestation of creation and annihilation of light induced defects. Further, TA in ultrashort time scales show a maximum at longer wavelength, however blue shifts as time evolves, which provides the first direct evidence of the multiple decay mechanisms of these defects. Detailed global analysis of the kinetic data clearly demonstrates that two and three decay constants are required to quantitatively model the experimental data at ps and ns respectively.

Crossover from photodarkening to photobleaching in a-Ge(x)Se(100-x) thin films

In this Letter, we present the interesting results of photodarkening (PD), transition toward photostability, and a slow crossover from PD to photobleaching when composition of the chalcogenide glassy thin film changes from Ge-deficient to rich. A subsequent Raman analysis on these as-prepared and irradiated samples provide the direct evidence of photoinduced structural rearrangement, i.e., photocrystallization of Se and the removal of edge-sharing GeSe4 tetrahedra. Further, our experimental results clearly demonstrate that light-induced effects can be effectively controlled by choosing the right composition and provide valuable information on synthesizing photostable/sensitive glasses.

Coexistence of fast photodarkening and slow photobleaching in Ge19As21Se60 thin films

We experimentally demonstrate the coexistence of two opposite photo-effects, viz. fast photodarkening (PD) and slow photobleaching (PB) in Ge(19)As(21)Se(60) thin films, when illuminated with a laser of wavelength 671 nm. PD appears to begin instantaneously upon light illumination and saturates in tens of seconds. By comparison, PB is a slower process that starts only after PD has saturated. Both PD and PB follow stretched exponential dependence on time. Modeling of overall change as a linear sum of two contributions suggests that the changes in As and Ge parts of glass network respond to light effectively independent of each other.