Precision depth measurement of through silicon vias (TSVs) on 3D semiconductor packaging process

Standard-Deviation-Based Adaptive Median Filter for Elimination of Batwing Effects in Step Microstructure Measurement Using Digital Holography

Digital holography has transformative potential for the measurement of stacked-chip microstructures due to its non-invasive, single-shot, full-field characteristics. However, significant light scattering and diffraction at steep edges in step microstructures cause the batwing effect, leading to measurement errors. Herein, we propose a standard-deviation-based adaptive median filter to eliminate batwing effects in step microstructure measurement using digital holography. The standard deviation determines the positions of the steps and the range of the batwing effect. During filtering, the filter window size varies: it adjusts according to the center's position within the batwing effect range and reduces outside this range to prevent distortion in other regions. Filtering weights are set to maintain information integrity while using larger filter windows. Experiments on the Standard Resolution Target USAF 1951 and the standard step height target show that our method successfully eliminates batwings while preserving the integrity of the remaining profile.

Advances in Aeroengine Cooling Hole Measurement: A Comprehensive Review

Film cooling technology is of great significance to enhance the performance of aero-engines and extend service life. With the increasing requirements for film cooling efficiency, researchers and engineers have carried out a lot of work on the precision and digital measurement of cooling holes. Based on the above, this paper outlines the importance and principles of film cooling technology and reviews the evolution of cooling holes. Also, this paper details the traditional measurement methods of the cooling hole used in current engineering scenarios with their limitations and categorizes digital measurement methods into five main types, including probing measurement technology, optical measurement technology, infrared imaging technology, computer tomography (CT) scanning technology, and composite measurement technology. The five types of methods and integrated automated measurement platforms are also analyzed. Finally, through a generalize and analysis of cooling hole measurement methods, this paper points out technical challenges and future trends, providing a reference and guidance for forward researches.

3D microscopy in industrial measurements

Quality control is essential to ensure the performance and yield of microdevices in industrial processing and manufacturing. In particular, 3D microscopy can be considered as a separate branch of microscopic instruments and plays a pivotal role in monitoring processing quality. For industrial measurements, 3D microscopy is mainly used for both the inspection of critical dimensions to ensure the design performance and detection of defects for improving the yield of microdevices. However, with the progress of advanced manufacturing technology and the increasing demand for high-performance microdevices, 3D microscopy has ushered in new challenges and development opportunities, such as breakthroughs in diffraction limit, 3D characterisation and calibrations of critical dimensions, high-precision detection and physical property determination of defects, and application of artificial intelligence. In this review, we provide a comprehensive survey about the state of the art and challenges in 3D microscopy for industrial measurements, and provide development ideas for future research. By describing techniques and methods with their advantages and limitations, we provide guidance to researchers and developers about the most suitable technique available for their intended industrial measurements.

A Hybrid Non-destructive Measuring Method of Three-dimensional Profile of Through Silicon Vias for Realization of Smart Devices

Smart devices have been fabricated based on design concept of multiple layer structures which require through silicon vias to transfer electric signals between stacked layers. Because even a single defect leads to fail of the packaged devices, the dimensions of the through silicon vias are needed to be measured through whole sampling inspection process. For that, a novel hybrid optical probe working based on optical interferometry, confocal microscopy and optical microscopy was proposed and realized for enhancing inspection efficiency in this report. The optical microscope was utilized for coarsely monitoring the specimen in a large field of view, and the other methods of interferometry and confocal microscopy were used to measure dimensions of small features with high speed by eliminating time-consuming process of the vertical scanning. Owing to the importance of the reliability, the uncertainty evaluation of the proposed method was fulfilled, which offers a practical example for estimating the performance of inspection machines operating with numerous principles at semiconductor manufacturing sites. According to the measurement results, the mean values of the diameter and depth were 40.420 µm and 5.954 µm with the expanded uncertainty of 0.050 µm (k = 2) and 0.208 µm (k = 2), respectively.

Total physical thickness measurement of a multi-layered wafer using a spectral-domain interferometer with an optical comb

An interferometric method using an optical comb is proposed and realized to measure the total physical thickness of a multi-layered wafer even if the refractive index of each layer is not given. For a feasibility test, two-layered and three-layered silicon-on-glass wafers were chosen as samples and were measured. An uncertainty evaluation was conducted to estimate the performance capabilities of the proposed method. To verify the measured values, the wafers were also measured by a contact-type standard instrument. For the three-layered wafer, the total physical thickness distribution was determined in a selected area.

Fizeau-type interferometric probe to measure geometrical thickness of silicon wafers

We developed an optical interferometric probe for measuring the geometrical thickness and refractive index of silicon wafers based on a Fizeau-type spectral-domain interferometer, as realized by adopting the optical fiber components of a circulator and a sheet-type beam splitter. The proposed method enables us to achieve a much simpler optical composition and higher immunity to air fluctuations owing to the use of fiber components and a common-path configuration as compared to a bulk-type optical configuration. A femtosecond pulse laser having a spectral bandwidth of 80 nm at a center wavelength of 1.55 µm and an optical spectrum analyzer having a wavelength uncertainty of 0.02 nm were used to acquire multiple interference signals in the frequency domain without a mechanical phase-shifting process. Among the many peaks in the Fourier-transformed signals of the measured interferograms, only three interference signals representing three different optical path differences were selected to extract both the geometrical thickness and group refractive index of a silicon wafer simultaneously. A single point on a double-sided polished silicon wafer was measured 90 times repetitively every two seconds. The geometrical thickness and group refractive index were found to be 476.89 µm and 3.6084, respectively. The measured thickness is in good agreement with that of a contact type method within the expanded uncertainty of contact-type instruments. Through an uncertainty evaluation of the proposed method, the expanded uncertainty of the geometrical thickness was estimated to be 0.12 µm (k = 2).

Femtosecond laser pulses for fast 3-D surface profilometry of microelectronic step-structures

Fast, precise 3-D measurement of discontinuous step-structures fabricated on microelectronic products is essential for quality assurance of semiconductor chips, flat panel displays, and photovoltaic cells. Optical surface profilers of low-coherence interferometry have long been used for the purpose, but the vertical scanning range and speed are limited by the micro-actuators available today. Besides, the lateral field-of-view extendable for a single measurement is restricted by the low spatial coherence of broadband light sources. Here, we cope with the limitations of the conventional low-coherence interferometer by exploiting unique characteristics of femtosecond laser pulses, i.e., low temporal but high spatial coherence. By scanning the pulse repetition rate with direct reference to the Rb atomic clock, step heights of ~69.6 μm are determined with a repeatability of 10.3 nm. The spatial coherence of femtosecond pulses provides a large field-of-view with superior visibility, allowing for a high volume measurement rate of ~24,000 mm3/s.

Frequency-comb-referenced multi-wavelength profilometry for largely stepped surfaces

3-D profiles of discontinuous surfaces patterned with high step structures are measured using four wavelengths generated by phase-locking to the frequency comb of an Er-doped fiber femtosecond laser stabilized to the Rb atomic clock. This frequency-comb-referenced method of multi-wavelength interferometry permits extending the phase non-ambiguity range by a factor of 64,500 while maintaining the sub-wavelength measurement precision of single-wavelength interferometry. Experimental results show a repeatability of 3.13 nm (one-sigma) in measuring step heights of 1800, 500, and 70 μm. The proposed method is accurate enough for the standard calibration of gauge blocks and also fast to be suited for the industrial inspection of microelectronics products.