112-Gb/s monolithic PDM-QPSK modulator in silicon

120-GBaud 16-QAM silicon photonics IQ modulator for data center interconnection

We demonstrated all-silicon IQ modulators (IQMs) operating at 120-GBaud 16-QAM with suitable bandwidth, and output power. We required optical signal-to-noise-ratio (rOSNR) that have promising potential to be used in 800-Gbps small-form-factor pluggable transceivers for data center interconnection. First, we tested an IQM chip using discrete drivers and achieved a per-polarization TX output power of -18.74 dBm and an rOSNR of 23.51 dB over a 100-km standard SMF. Notably, a low BER of 1.4e-3 was obtained using our SiP IQM chip without employing nonlinear compensation, optical equalization, or an ultra-wide-bandwidth, high-ENOB OMA. Furthermore, we investigated the performance of a 3D packaged transmitter by emulating its frequency response using an IQM chip, discrete drivers, and a programmable optical filter. With a laser power of 17 dBm, we achieved a per-polarization output power of -15.64 dBm and an rOSNR of 23.35 dB.

High-performance coherent optical modulators based on thin-film lithium niobate platform

The coherent transmission technology using digital signal processing and advanced modulation formats, is bringing networks closer to the theoretical capacity limit of optical fibres, the Shannon limit. The in-phase/quadrature electro-optic modulator that encodes information on both the amplitude and the phase of light, is one of the underpinning devices for the coherent transmission technology. Ideally, such modulator should feature a low loss, low drive voltage, large bandwidth, low chirp and compact footprint. However, these requirements have been only met on separate occasions. Here, we demonstrate integrated thin-film lithium niobate in-phase/quadrature modulators that fulfil these requirements simultaneously. The presented devices exhibit greatly improved overall performance (half-wave voltage, bandwidth and optical loss) over traditional lithium niobate counterparts, and support modulation data rate up to 320 Gbit s-1. Our devices pave new routes for future high-speed, energy-efficient, and cost-effective communication networks.

Partial Pre-Emphasis for Pluggable 400 G Short-Reach Coherent Systems

Pre-emphasis filters are used to pre-compensate for the transmitter frequency response of coherent systems to mitigate receiver noise enhancement. This is particularly essential for low-cost, low-power coherent transceivers due to having an extremely bandlimited transmitter. However, the pre-emphasis filter also increases the signal peak-to-average power ratio (PAPR), thus posing a higher effective number of bits (ENoB) requirement for the arbitrary waveform generator (AWG). In this paper, we first numerically study the PAPR impact of partial pre-emphasis filters. We show that with partial pre-emphasis, an ENoB reduction from 5 to 4.5 bits is attainable at the same signal-to-noise ratio (SNR) out of the AWG. Next, we experimentally investigate the overall performance penalty of partial pre-emphasis in a 50 Gbaud 16QAM coherent system. A manageable Q factor penalty of around 0.5 dB is found for both single-polarization and dual-polarization systems with a 0.8 dB PAPR reduction.

Compact multimode waveguide based temperature-insensitive Mach-Zehnder interferometer

A novel multimode waveguide based Mach-Zehnder interferometer (MZI) is demonstrated on an SOI platform with the properties of compact footprint and temperature-insensitive operation. The device can achieve a thermal dependence around 13pm/°C in a wavelength range of 40nm. Owing to the utilization of one single straight multimode waveguide, the device is naturally immune to local temperature distributions. The measured results exhibit transmissions with an extinction ratio better than 8dB and a minimum insertion loss lower than 0.31dB over the wavelength range of 1545nm-1585nm. Moreover, the proposed device is compatible with CMOS process.

180 Gb/s single carrier single polarization 16-QAM transmission using an O-band silicon photonic IQM

In this paper, we present inphase-quadrature (IQ) modulation in the O-band using dual parallel Mach-Zehnder modulators on the silicon photonics platform. The detailed design of the IQ modulator (IQM) is discussed. We then report the DC and small signal characterization of the device and investigate the performance of the device in a coherent transmission system. A bit rate of 180 Gb/s with 16-QAM modulation is achieved over 20 km of single-mode fiber without any chromatic dispersion compensation. Furthermore, we demonstrate that 77 Gbaud QPSK transmission can be achieved with a low drive voltage of 3 Vpp.

Cost-effective 400-Gbps micro-intradyne coherent receiver using optical butt-coupling and FPCB wirings

We present a cost-effective and bandwidth-enhanced 64-Gbaud micro-intradyne coherent receiver based on hybrid integration of InP waveguide-photodetector (WG-PD) and silica planar lightwave circuit (PLC). InP waveguide-photodetector (WG-PD) arrays are simply chip-to-chip bonded and optically butt-coupled to a silica-based dual-polarization optical hybrid chip. Multiple flexible printed circuit boards are adapted for electrical RF and DC wirings, which provide low-cost integration and good RF performance of the receiver. A 3-dB bandwidth of the fabricated coherent receiver is extended to ~36 GHz by optimization of bondwire inductance between the WG-PD array and the transimpedance amplifier (TIA), even when commercial TIAs with a typical bandwidth of ~29 GHz are used. Through optimization of the silica hybrid integrated coherent receiver, 64-Gbaud DP-16QAM signal transmission over 1050-km standard single-mode fiber is successfully demonstrated below a bit error rate of 2 × 10^-3. This is the threshold for a soft decision-based forward error correction, at the optical signal to noise ratio of 23.8 dB.

On-chip silicon photonic signaling and processing: a review

The arrival of the big data era has driven the rapid development of high-speed optical signaling and processing, ranging from long-haul optical communication links to short-reach data centers and high-performance computing, and even micro-/nano-scale inter-chip and intra-chip optical interconnects. On-chip photonic signaling is essential for optical data transmission, especially for chip-scale optical interconnects, while on-chip photonic processing is a critical technology for optical data manipulation or processing, especially at the network nodes to facilitate ultracompact data management with low power consumption. In this paper, we review recent research progress in on-chip photonic signaling and processing on silicon photonics platforms. Firstly, basic key devices (lasers, modulators, detectors) are introduced. Secondly, for on-chip photonic signaling, we present recent works on on-chip data transmission of advanced multi-level modulation signals using various silicon photonic integrated devices (microring, slot waveguide, hybrid plasmonic waveguide, subwavelength grating slot waveguide). Thirdly, for on-chip photonic processing, we summarize recent works on on-chip data processing of advanced multi-level modulation signals exploiting linear and nonlinear effects in different kinds of silicon photonic integrated devices (strip waveguide, directional coupler, 2D grating coupler, microring, silicon-organic hybrid slot waveguide). Various photonic processing functions are demonstrated, such as photonic switch, filtering, polarization/wavelength/mode (de)multiplexing, wavelength conversion, signal regeneration, optical logic and computing. Additionally, we also introduce extended silicon+ photonics and show recent works on on-chip graphene-silicon photonic signal processing. The advances in on-chip silicon photonic signaling and processing with favorable performance pave the way to integrate complete optical communication systems on a monolithic chip and integrate silicon photonics and silicon nanoelectronics on a chip. It is believed that silicon photonics will enable more and more emerging advanced applications even beyond silicon photonic signaling and processing.

Highly efficient on-chip excitation of orthogonal-polarized gap plasmons for a dense polarization multiplexing circuit

We propose an on-chip excitation structure for orthogonal-polarized gap plasmons in polarization multiplexing photonic integrated circuits. The structure consists of a Au nanostripe and tapered gap for refractive index matching to a nano-scale gap plasmonic waveguide; it was fabricated on the top surface of a dielectric-stripe-type waveguide. The excitation ratio from the dielectric-stripe-surface mode to the metallic-gap mode was estimated to be 0.79 using the finite-difference time-domain method for a 100-nm-wide, 100-nm-thick gap waveguide. We experimentally observed the gap mode plasmonic intensity distribution using scanning near-field optical microscopy and confirmed the conversion.

Modulator figure of merit for short reach data links

The traditional Mach-Zehnder modulator (MZM) figure of merit (FOM) has been defined as (V_π²)/υ_3dBe, and works effectively for LiNbO₃ long haul modulators. However, for plasma dispersion based electro-optic modulators, or any modulator that has an inherent relationship between its bandwidth, required drive voltage, and optical insertion loss/gain, this FOM is inappropriate. This is particularly true for short reach links with no optical amplification. In the following, we propose a new modulator FOM (M-FOM) based on device metrics that are essential for short-reach links, such as the peak-to-peak drive voltage, modulator rise-fall time, and relative optical modulation amplitude. Link sensitivity measurements from two MZMs that have different bandwidths and optical losses are compared using our M-FOM to demonstrate its utility. Furthermore, we present a novel application protocol of our M-FOM to provide deeper insight into the relative system impact that modulator performance has on data links with no optical amplification, by taking the ratio of M-FOMs from two modulators driven with the same radio frequency drive power.

Optical PAM-4 signal generation using a silicon Mach-Zehnder optical modulator

An analytic model is proposed to study the linearity performance of the silicon Mach-Zehnder optical modulator. According to the simulation results, we optimize the width of the silicon rib waveguide and the location of the PN junction to improve the linearity performance. The fabricated silicon Mach-Zehnder optical modulator has a spurious free dynamic range of 113.3 dB.Hz^2/3 and 88.9 dB.Hz^1/2 for the third-order intermodulation distortion and the second-order harmonic distortion. We also demonstrate the optical four-level pulse-amplitude-modulation (PAM-4) signal generation through the device. The generated optical PAM-4 signal is characterized at the rates up to 35 Gbaud. The BERs of the optical PAM-4 signals can reach 5.2╳10^-6 at 20 Gbaud and 6.6╳10^-5 at 32 Gbaud, which are much lower than the threshold of hard decision forward error correction (3.8 ╳10^-3).

Silicon 16-QAM optical modulator driven by four binary electrical signals

We demonstrate a silicon 16-quadrature amplitude modulation (16-QAM) optical modulator. Unlike traditional 16-QAM optical modulator with two Mach-Zehnder modulators (MZMs) driven by two four-level electrical signals, the device is based on four MZMs driven by four binary electrical signals. With the simple electrical driving configuration, the device generates a 16-QAM optical signal at 20 Gbaud with an error vector magnitude of 13.7%.

Polarization-selective microring resonators

Polarization-selective microring resonators (MRRs) are designed and demonstrated to work with resonances for only one of TE and TM polarizations for the first time, which can be used for realizing the crossing-free, compact and scalable multi-wavelength coherent receiver with dual polarizations. The present polarization-selective MRRs are realized by manipulating the polarization-dependence of the bending loss of the micro-resonators and the coupling ratio of the bent directional couplers introduced here. The demonstrated TM-type MRR and the TE-type MRR work well as a wavelength-selective optical filter for TM polarization and TE polarization, respectively, as designed. On the other hand, the resonance of the undesired orthogonal polarization mode is depressed significantly with very high extinction ratio. For the realized TM-type MRR, the peak-transmission at the drop port is depressed to be lower than -50dB and the loss of the transmission at the through port is very low (<0.5dB) when TE polarization mode is input. For the realized TE-type MRR, the peak-transmission at the drop port is depressed to be ~-40dB and the loss of the transmission at the through port is very low (<0.5dB) when TM-polarization mode is input. The present polarization-selective TM- and TE-type MRRs are useful for the applications with multiple wavelengths and dual polarizations.

High-dimensional structured light coding/decoding for free-space optical communications free of obstructions

Bessel beams carrying orbital angular momentum (OAM) with helical phase fronts exp(ilφ)(l=0;±1;±2;…), where φ is the azimuthal angle and l corresponds to the topological number, are orthogonal with each other. This feature of Bessel beams provides a new dimension to code/decode data information on the OAM state of light, and the theoretical infinity of topological number enables possible high-dimensional structured light coding/decoding for free-space optical communications. Moreover, Bessel beams are nondiffracting beams having the ability to recover by themselves in the face of obstructions, which is important for free-space optical communications relying on line-of-sight operation. By utilizing the OAM and nondiffracting characteristics of Bessel beams, we experimentally demonstrate 12 m distance obstruction-free optical m-ary coding/decoding using visible Bessel beams in a free-space optical communication system. We also study the bit error rate (BER) performance of hexadecimal and 32-ary coding/decoding based on Bessel beams with different topological numbers. After receiving 500 symbols at the receiver side, a zero BER of hexadecimal coding/decoding is observed when the obstruction is placed along the propagation path of light.

Distributed electrode Mach-Zehnder modulator with double-pass phase shifters and integrated inductors

A novel high-speed Mach-Zehnder modulator (MZM) fully integrated into a 90 nm CMOS process is presented. The MZM features 'double-pass' optical phase shifter segments, and the first use of integrated inductors in a 'velocity-matched' distributed-electrode configuration.

Symmetrical polarization splitter/rotator design and application in a polarization insensitive WDM receiver

In integrated photonics, the design goal of a polarization splitter/rotator (PSR) has been separating the TE0 and TM0 modes in a waveguide. This is a natural choice. But in theory, a PSR only needs to project the incoming State Of Polarization (SOP) orthogonally to its output ports, using any orthogonal mode basis set in the fiber. In this article, we introduce a novel PSR design that alternatively takes the linear combination of TE0 and TM0 (TE0 +/- TM0) as orthogonal bases. By contrast, existing approaches exclusively use TE0 and TM0 as their basis set. The design is based on two symmetric and robust structures: a bi-layer taper and a Y-junction, and involves no bends. To prove the concept, we incorporated it into a four-channel polarization insensitive wavelength division multiplexing (PI-WDM) receiver fabricated in a standard CMOS Si photonics process. 40 Gb/s data rate and 0.7 +/- 0.2 dB polarization dependent loss (PDL) is demonstrated on each channel. Lastly, we propose an improved PSR design with 12 μm device length, < 0.1 dB PDL, < 0.4 dB insertion loss and < 0.05 dB wavelength dependence across C-band for both polarizations. Overall, our PSR design concept is simple, easy to realize and presents a new perspective for future PSR designs.

Low-loss and fabrication tolerant silicon mode-order converters based on novel compact tapers

We propose large bandwidth and high fabrication-tolerance mode-order converters on the silicon-on-insulator platform based on novel compact tapers structures. Each of the converters is in a single waveguide. Designs of different symmetries with and without breaking the parities between odd and even modes are illustrated. The fabrication tolerances of the devices are also investigated. The simulation results show that high conversion efficiencies can be readily achieved over a wavelength range from 1520 nm to 1580 nm for all of the proposed devices. The average conversion efficiencies of TE1-to-TE0, TE2-to-TE0, TE3-to-TE0, TE2-to-TE1, TE3-to-TE1, and TE3-to-TE2 converters are -0.061 dB, -0.052 dB, -0.11 dB, -0.119 dB, -0.168 dB, and -0.154 dB, respectively. The conversion efficiencies have negligible degradations under normal width and thickness deviations.

Polarization splitter and rotator with subwavelength grating for enhanced fabrication tolerance

We propose a novel method to implement a compact and fabrication-tolerant polarization splitter and rotator (PSR) on the silicon-on-insulator platform. The PSR consists of a silicon wire waveguide coupled to a subwavelength grating (SWG) waveguide in an asymmetrical directional coupler. The SWG effect allows an additional degree of design freedom to engineer the equivalent material refractive index. This is advantageously used to effectively compensate for fabrication inaccuracies in PSRs. Our simulation results show that the PSR has a low TM-to-TE polarization conversion loss of -0.13  dB (a conversion efficiency of 97%) at the wavelength of 1550 nm, and better than -0.4 dB conversion loss over the entire C-band wavelength range. Compared to the PSRs made of conventional wire waveguides, the use of SWG index engineering improves the waveguide width fabrication tolerance substantially, from ±3  nm to ±40  nm. A compact device size with a coupling length of 25 μm is achieved.

Ultracompact silicon-on-insulator polarization rotator for polarization-diversified circuits

We present an ultracompact (15.3 μm long) and high-efficiency silicon-on-insulator polarization rotator designed for polarization-diversified circuits. The rotator is comprised of a bilevel-tapered TM0-to-TE1 mode converter and a novel bent-tapered TE1-to-TE0 mode converter. The rotator has a simulated polarization conversion loss lower than 0.2 dB and a polarization-extinction ratio larger than 25 dB over a wavelength range of 80 nm around 1550 nm. The rotator has a SiO2 top-cladding and can be fabricated in a CMOS-compatible process.

Fabrication tolerant and broadband polarization splitter and rotator based on a taper-etched directional coupler

We propose a fabrication tolerant polarization splitter and rotator (PSR) on the silicon-on-insulator platform based on the mode-coupling mechanism. The PSR consists of a silicon wire waveguide coupled to a taper-etched waveguide. Compared to previously reported PSRs based on directional couplers which are sensitive to fabrication variations, the partially etched taper structure can compensate for fabrication inaccuracies. In addition, the taper-etched geometry breaks both the horizontal and vertical symmetries of the waveguide, introducing an additional degree of design freedom to accommodate different upper cladding layers. The proposed PSR can be readily integrated in a planar waveguide circuit using e.g. SiO(2) cladding, making it compatible with typical metal back-end-of-line processes. Our simulation results show that the PSR has a low TM-to-TE polarization conversion loss of -0.09 dB in the C-band (or a conversion efficiency of 98%). A low TE-to-TE through insertion loss (-0.07 dB) and a very low polarization crosstalk (-30 dB) over a wide wavelength range exceeding 160 nm with a large fabrication tolerance (>50 nm) are numerically demonstrated.

Low-loss high-speed silicon IQ modulator for QPSK/DQPSK in C and L bands

A low-loss high-speed silicon in-phase (I) quadrature (Q) modulator is designed, fabricated and characterized. The fabricated IQ modulator has a low passive optical loss of 9 dB in C and L bands. Using the modulator, differential quadrature phase-shift keying (DQPSK) transmission at 44.6 Gb/s with differential detection is confirmed with an optical signal-to-noise ratio (OSNR) of 16.3 dB for a bit error rate (BER) of 10(-3) and a dispersion tolerance of -96 to 107 ps/nm. Moreover, in digital coherent detection, quadrature phase-shift keying (QPSK) up to 64 Gb/s are achieved with an OSNR of 11.6-11.8 dB for a BER of 10(-2) at 1530, 1550, and 1610 nm.

Four-port integrated polarizing beam splitter

In this Letter, we report on the first integrated four-port polarizing beam splitter. The device operates on the principle of mode evolution and was implemented in a silicon-on-insulator silicon photonics platform and fabricated on a 300 mm CMOS line using 193 nm optical immersion lithography. The adiabatic transition forming of the structure enabled over a 150 nm bandwidth from λ~1350 to λ~1500  nm, achieving a cross-talk level below -10  dB over the entire band.

Monolithic polarization diversity coherent receiver based on 120-degree optical hybrids on silicon

We present a monolithic polarization diversity coherent receiver by employing 120-degree optical hybrids on a silicon photonic integrated circuit (PIC). This PIC monolithically integrates silicon inverse tapers for fiber coupling, silicon polarization splitters, germanium high-speed photo detectors, and 120-degree optical hybrids based on 3x3 multimode interferometers (MMI). We demonstrate that 112-Gb/s polarization-division-multiplexed quadrature phase-shift keyed signals are detected in the wavelength range of 1530-1580 nm with comparable performance to commercial receivers.

Silicon based polarization insensitive filter for WDM-PDM signal processing

We propose and fabricate a novel circuit that combines two two-dimensional (2D) grating couplers and a microring resonator (MRR). According to the polarization states, one 2D grating coupler first splits the input signals into two orthogonal paths, which co-propagate in the loop and share a common MRR, and then the two paths are combined together by the other 2D grating coupler. The proposed circuit is polarization insensitive and can be used as a polarization insensitive filter. For demonstration, the wavelength division and polarization division multiplexing (WDM-PDM) non return-to-zero differential-phase-shift-keying (NRZ-DPSK) signals can be demodulated successfully. The bit error ratio measurements show an error free operation, reflecting the good performance and the practicability.

Low-voltage, high speed, compact silicon modulator for BPSK modulation

A low voltage, high speed, compact silicon Mach-Zehnder Interferometer (MZI) modulator for Binary Phase Shift Keying (BPSK) modulation has been demonstrated. High modulation efficiency, VπLπ equals to 0.45V·cm, was obtained in a 1mm length device owing to a higher doping concentration and low-loss traveling-wave electrode. 25 Gb/s non-return-to-zero(NRZ)-BPSK with 6Vpp RF driving signal was achieved. Driven by a very low 3Vpp RF signal, the 10 Gb/s NRZ-BPSK was also realized benefiting from the high modulation efficiency and the low-voltage driving scheme. The power consumption for the BPSK modulation was as low as 0.118 W. These results prove that the silicon modulator is suitable for advanced communication system with low power consumption.

Silicon-organic hybrid (SOH) IQ modulator using the linear electro-optic effect for transmitting 16QAM at 112 Gbit/s

Advanced modulation formats call for suitable IQ modulators. Using the silicon-on-insulator (SOI) platform we exploit the linear electro-optic effect by functionalizing a photonic integrated circuit with an organic χ(2)-nonlinear cladding. We demonstrate that this silicon-organic hybrid (SOH) technology allows the fabrication of IQ modulators for generating 16QAM signals with data rates up to 112 Gbit/s. To the best of our knowledge, this is the highest single-polarization data rate achieved so far with a silicon-integrated modulator. We found an energy consumption of 640 fJ/bit.

50-Gb/s silicon optical modulator with traveling-wave electrodes

We demonstrate silicon Mach-Zehnder Interferometer (MZI) optical modulator with 50.1-Gb/s data rate and 5.56 dB dynamic extinction ratios. The phase shifter is composed by a 4 mm-long reverse-biased p-n junction with a modulation efficiency (V(π) · L(π)) of ~26.7 V · mm and phase shifter loss of ~1.04 dB/mm at V(bias) = -6 V. The measured electro-optic bandwidth reaches 25.6 GHz at V(bias) = -5 V. Compensation doping method and low loss traveling-wave electrodes are utilized to improve the modulator performance. Measurement result demonstrates that reasonable choosing of working point and doping profile of the silicon optical modulator is critical in order to match the performance requirement of the real application.

960-km SSMF transmission of 105.7-Gb/s PDM 3-PAM using directly modulated VCSELs and coherent detection

We generate a 105.7-Gb/s signal by directly modulating a 1.5-µm VCSEL with a 33.35-Gbaud 3-level signal and polarization multiplexing. By using digital coherent detection, we successfully transmit the 105.7-Gb/s line rate (88.10 Gb/s net bit rate) signal over 960-km standard single-mode-fiber (SSMF) at a 20% hard-decision forward-error correction (FEC) threshold, which is at bit-error ratio (BER) of 1.5 x 10(-2)