Regulation of structure rigidity for improvement of the thermal stability of near-infrared luminescence in Bi-doped borate glasses

High-efficiency near-infrared emission from Bismuth-doped SiO0.73 thin films fabricated by ion implantation technology

Over the past decade, the possibility of near-infrared light generation and amplification on chip has attracted great interest for future monolithic integrated optical components. In this Letter, we demonstrated a CMOS-compatible method to fabricate amorphous SiO0.73 thin films doped with Bi ions. It exhibited highly improved σ(em)×τ of up to 4.2×10(-23) cm2 s and greatly enhanced near-infrared characteristic emission originated from Bi ions by nearly 60 times via Si nanocrystal size control. We anticipated that this Bi-doped near-infrared light emitter would be a new starting point for future research in the field of optoelectronic integration.

Origin of structural relaxation dependent spectroscopic features of bismuth-activated glasses

For the first time, we studied the effect of structural relaxation on the NIR spectroscopic properties of bismuth-activated germanium glasses below glass transition temperature. Interestingly, distinct change behavior of NIR luminescence is observed at two different heat-treatment temperature ranges corresponding to two different relaxation behavior of glass structure. Besides, when structural modified by partly substituting B(2)O(3) for GeO(2), a narrower and more thermal sensitive luminescence is observed, which is inexplicable by "inhomogeneous broadening" and we tentatively attribute it to a defect-involved reason. Fundamentally the results here not only provide us a deeper insight into the optical property of bismuth-activated materials but also increase our understanding of the glassy state, and practically it delivers some valuable guidance in designing bismuth-activated glasses with superior NIR optical properties.