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Wang S, Zhao J, Tong T, Cheng B, Xiao Y, Lei S. Bias-Controlled Tunable Electronic Transport with Memory Characteristics in an Individual ZnO Nanowire for Realization of a Self-Driven UV Photodetector with Two Symmetrical Electrodes. ACS APPLIED MATERIALS & INTERFACES 2019; 11:14932-14943. [PMID: 30920194 DOI: 10.1021/acsami.9b00267] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
ZnO nanostructures are exceedingly important building blocks for nanodevices due to their wide band gap and large exciton binding energy. However, their electronic transport characteristics are unstable and unrepeatable with external environment variation. Here, we demonstrate that electron transport of an individual ZnO nanowire-based device with the two same electrodes can be controllably modulated by applying a relatively large uni-/bidirectional bias. After being modulated, moreover, their electrical properties can well be maintained at relatively low operation bias and room temperature, demonstrating a memory behavior. The presence of surface states related to lattice periodicity breaking and traps associated with oxygen vacancy (Vo) and zinc interstitial (Zni) deep-level defects plays a crucial role in tunable electron transport with a memory feature. For the single nanowire-based two-terminal device, two back-to-back connected surface barrier diodes with series resistance are formed. The filling and emptying of traps near two end electrodes can remarkably adjust the width and height of the surface barrier. At a relatively low bias, the unmodulated conductance is governed by the electron hopping of bulk traps since the height of emptied traps is higher than that of the surface barrier, whereas at a relatively large bias, it is dominated by thermion emission due to a dramatic decrease of the surface barrier width resulting from the electron injection into traps from a negative electrode. Moreover, it will be beneficial for a thin surface barrier to penetrate UV light and separate photoexcited electron-hole pairs. After being asymmetrically modulated by a unidirectional injection, it can be successfully applied to realize a self-driven UV photodetector based on a photovoltaic effect in the symmetrical two-electrode structure. Our work provides a new route to tune electrical properties of nanostructures, which may inspire the development of novel electronic and optoelectronic devices.
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Fareed S, Jamil A, Tiwari N, Rafiq M. Influence of Cr doping on Schottky barrier height and visible light detection of ZnO thin films deposited by magnetron sputtering. MICRO AND NANO ENGINEERING 2019. [DOI: 10.1016/j.mne.2018.12.003] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
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Jeong S, Kim MW, Jo YR, Kim TY, Leem YC, Kim SW, Kim BJ, Park SJ. Crystal-Structure-Dependent Piezotronic and Piezo-Phototronic Effects of ZnO/ZnS Core/Shell Nanowires for Enhanced Electrical Transport and Photosensing Performance. ACS APPLIED MATERIALS & INTERFACES 2018; 10:28736-28744. [PMID: 30070111 DOI: 10.1021/acsami.8b06192] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We report the crystal-structure-dependent piezotronic and piezo-phototronic effects of ZnO/ZnS core/shell nanowires (CS NWs) having different shell layer crystalline structures. The wurtzite (WZ) ZnO/WZ ZnS CS NWs showed higher electrical transport and photosensing properties under external strain than the WZ ZnO/zinc blende (ZB) ZnS CS NWs. The WZ ZnO/WZ ZnS CS NWs under a compressive strain of -0.24% showed 4.4 and 8.67 times larger increase in the output current (1.93 × 10-4 A) and photoresponsivity (8.76 × 10-1 A/W) than those under no strain. However, the WZ ZnO/ZB ZnS CS NWs under the same strain condition showed 3.2 and 2.16 times larger increase in the output current (1.13 × 10-4 A) and photoresponsivity (2.16 × 10-1 A/W) than those under no strain. This improvement is ascribed to strain-induced piezopolarization charges at both the WZ ZnO NWs and the grains of the WZ ZnS shell layer in WZ ZnO/WZ ZnS CS NWs, whereas piezopolarization charges are induced only in the ZnO core region of the WZ ZnO/ZB ZnS CS NWs. These charges can change the type-II band alignment in the ZnO and ZnS interfacial region as well as the Schottky barrier height at the junction between the semiconductor and the metal, thus facilitating electrical transport and reducing the recombination probability of charge carriers under UV irradiation.
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Affiliation(s)
| | | | | | - Tae-Yun Kim
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | | | - Sang-Woo Kim
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , Suwon 16419 , Republic of Korea
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Dellis S, Pliatsikas N, Kalfagiannis N, Lidor-Shalev O, Papaderakis A, Vourlias G, Sotiropoulos S, Koutsogeorgis DC, Mastai Y, Patsalas P. Broadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures. Sci Rep 2018; 8:6988. [PMID: 29725079 PMCID: PMC5934408 DOI: 10.1038/s41598-018-24684-6] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/26/2017] [Accepted: 04/03/2018] [Indexed: 11/09/2022] Open
Abstract
The fabrication, by an all electrochemical process, of porous Si/ZnO nanostructures with engineered structural defects, leading to strong and broadband deep level emission from ZnO, is presented. Such nanostructures are fabricated by a combination of metal-assisted chemical etching of Si and direct current electrodeposition of ZnO. It makes the whole fabrication process low-cost, compatible with Complementary Metal-Oxide Semiconductor technology, scalable and easily industrialised. The photoluminescence spectra of the porous Si/ZnO nanostructures reveal a correlation between the lineshape, as well as the strength of the emission, with the morphology of the underlying porous Si, that control the induced defects in the ZnO. Appropriate fabrication conditions of the porous Si lead to exceptionally bright Gaussian-type emission that covers almost the entire visible spectrum, indicating that porous Si/ZnO nanostructures could be a cornerstone material towards white-light-emitting devices.
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Affiliation(s)
- S Dellis
- Department of Physics, Aristotle University of Thessaloniki, Thessaloniki, GR-54124, Greece
| | - N Pliatsikas
- Department of Physics, Aristotle University of Thessaloniki, Thessaloniki, GR-54124, Greece
| | - N Kalfagiannis
- School of Science and Technology, Nottingham Trent University, Nottingham, NG11 8NS, United Kingdom
| | - O Lidor-Shalev
- Department of Chemistry and the Institute of Nanotechnology, Bar-Ilan University, Ramat-Gan, Israel
| | - A Papaderakis
- Department of Chemistry, Aristotle University of Thessaloniki, Thessaloniki, GR-54124, Greece
| | - G Vourlias
- Department of Physics, Aristotle University of Thessaloniki, Thessaloniki, GR-54124, Greece
| | - S Sotiropoulos
- Department of Chemistry, Aristotle University of Thessaloniki, Thessaloniki, GR-54124, Greece
| | - D C Koutsogeorgis
- School of Science and Technology, Nottingham Trent University, Nottingham, NG11 8NS, United Kingdom
| | - Y Mastai
- Department of Chemistry and the Institute of Nanotechnology, Bar-Ilan University, Ramat-Gan, Israel
| | - P Patsalas
- Department of Physics, Aristotle University of Thessaloniki, Thessaloniki, GR-54124, Greece.
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Yan Y, Xu Y, Lei S, Ou X, Chen L, Xiong J, Xiao Y, Cheng B. Fabrication of Bi19S27I3 nanorod cluster films for enhanced photodetection performance. Dalton Trans 2018; 47:3408-3416. [DOI: 10.1039/c7dt04906d] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Bi19S27I3 nanorod cluster films are directly grown on rigid substrates for potential application in wide range photodetectors.
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Affiliation(s)
- Yutao Yan
- School of Materials Science and Engineering
- Nanchang University
- Nanchang
- China
| | - Yueling Xu
- School of Materials Science and Engineering
- Nanchang University
- Nanchang
- China
| | - Shuijin Lei
- School of Materials Science and Engineering
- Nanchang University
- Nanchang
- China
| | - Xiuling Ou
- School of Materials Science and Engineering
- Nanchang University
- Nanchang
- China
| | - Lianfu Chen
- School of Materials Science and Engineering
- Nanchang University
- Nanchang
- China
| | - Jinsong Xiong
- School of Materials Science and Engineering
- Nanchang University
- Nanchang
- China
| | - Yanhe Xiao
- School of Materials Science and Engineering
- Nanchang University
- Nanchang
- China
| | - Baochang Cheng
- School of Materials Science and Engineering
- Nanchang University
- Nanchang
- China
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Chen A, Liu R, Peng X, Chen Q, Wu J. 2D Hybrid Nanomaterials for Selective Detection of NO 2 and SO 2 Using "Light On and Off" Strategy. ACS APPLIED MATERIALS & INTERFACES 2017; 9:37191-37200. [PMID: 28910069 DOI: 10.1021/acsami.7b11244] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
In order to distinguish NO2 and SO2 gas with one sensor, we designed a paper chip assembled with a 2D g-C3N4/rGO stacking hybrid fabricated via a layer-by-layer self-assembly approach. The g-C3N4/rGO hybrid exhibited a remarkable photoelectric property due to the construction of a van der Waals heterostructure. For the first time, we have been able to selectively detect NO2 and SO2 gas using a "light on and off" strategy. Under the "light off" condition, the g-C3N4/rGO sensor exhibited a p-type semiconducting behavior with a low detection limit of 100 ppb of NO2, but with no response toward SO2. In contrast, the sensor showed n-type semiconducting behavior which could detect SO2 at concentration as low as 2 ppm under UV light irradiation. The effective electron transfer among the 2D structure of g-C3N4 and rGO nanosheets as well as highly porous structures could play an important role in gas sensing. The different sensing mechanisms at "light on and off" circumstances were also investigated in detail.
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Affiliation(s)
- Aimin Chen
- College of Chemical Engineering, Zhejiang University of Technology , Hangzhou 310014, China
| | - Rui Liu
- College of Chemical Engineering, Zhejiang University of Technology , Hangzhou 310014, China
| | - Xiao Peng
- College of Chemical Engineering, Zhejiang University of Technology , Hangzhou 310014, China
| | - Qiaofen Chen
- Institute of Microanalytical System, Department of Chemistry, Zhejiang University , Hangzhou 310058, China
| | - Jianmin Wu
- Institute of Microanalytical System, Department of Chemistry, Zhejiang University , Hangzhou 310058, China
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Lähnemann J, Den Hertog M, Hille P, de la Mata M, Fournier T, Schörmann J, Arbiol J, Eickhoff M, Monroy E. UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices. NANO LETTERS 2016; 16:3260-7. [PMID: 27104371 DOI: 10.1021/acs.nanolett.6b00806] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional GaN shell around the heterostructures. In the absence of a surface conduction channel, the incorporation of the heterostructure leads to a decrease of the dark current and an increase of the photosensitivity. A significant dispersion in the magnitude of dark currents for different single nanowires is attributed to the coalescence of nanowires with displaced nanodisks, reducing the effective length of the heterostructure. A larger number of active nanodisks and AlN barriers in the current path results in lower dark current and higher photosensitivity and improves the sensitivity of the nanowire to variations in the illumination intensity (improved linearity). Additionally, we observe a persistence of the photocurrent, which is attributed to a change of the resistance of the overall structure, particularly the GaN stem and cap sections. As a consequence, the time response is rather independent of the dark current.
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Affiliation(s)
- Jonas Lähnemann
- University Grenoble-Alpes , 38000 Grenoble, France
- CEA-Grenoble, INAC-PHELIQS, 17 avenue des Martyrs, 38000 Grenoble, France
| | - Martien Den Hertog
- University Grenoble-Alpes , 38000 Grenoble, France
- Institut Nèel, CNRS, 25 avenue des Martyrs, 38000 Grenoble, France
| | - Pascal Hille
- I. Physikalisches Institut, Justus-Liebig-Universitt Gießen , 35392 Gießen, Germany
| | - Marı́a de la Mata
- Institut Catalá de Nanociència i Nanotecnologia (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST) , Campus UAB, Bellaterra, 08193 Barcelona, Catalonia, Spain
| | - Thierry Fournier
- University Grenoble-Alpes , 38000 Grenoble, France
- Institut Nèel, CNRS, 25 avenue des Martyrs, 38000 Grenoble, France
| | - Jörg Schörmann
- I. Physikalisches Institut, Justus-Liebig-Universitt Gießen , 35392 Gießen, Germany
| | - Jordi Arbiol
- Institut Catalá de Nanociència i Nanotecnologia (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST) , Campus UAB, Bellaterra, 08193 Barcelona, Catalonia, Spain
- Instituciò Catalana de Recerca i Estudis Avançats (ICREA), 08193 Barcelona, Catalonia, Spain
| | - Martin Eickhoff
- I. Physikalisches Institut, Justus-Liebig-Universitt Gießen , 35392 Gießen, Germany
| | - Eva Monroy
- University Grenoble-Alpes , 38000 Grenoble, France
- CEA-Grenoble, INAC-PHELIQS, 17 avenue des Martyrs, 38000 Grenoble, France
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Mah C, Yam F, Hassan Z. Investigation and Characterization of ZnO Nanostructures Synthesized by Electrochemical Deposition. ACTA ACUST UNITED AC 2016. [DOI: 10.1016/j.proche.2016.03.119] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
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Cheng B, Zhao J, Xiao L, Cai Q, Guo R, Xiao Y, Lei S. PMMA interlayer-modulated memory effects by space charge polarization in resistive switching based on CuSCN-nanopyramids/ZnO-nanorods p-n heterojunction. Sci Rep 2015; 5:17859. [PMID: 26648249 PMCID: PMC4673466 DOI: 10.1038/srep17859] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/27/2015] [Accepted: 11/06/2015] [Indexed: 11/25/2022] Open
Abstract
Resistive switching (RS) devices are commonly believed as a promising candidate for next generation nonvolatile resistance random access memory. Here, polymethylmethacrylate (PMMA) interlayer was introduced at the heterointerface of p-CuSCN hollow nanopyramid arrays and n-ZnO nanorod arrays, resulting in a typical bipolar RS behavior. We propose the mechanism of nanostructure trap-induced space charge polarization modulated by PMMA interlayer. At low reverse bias, PMMA insulator can block charges through the heterointerface, and and trapped states are respectively created on both sides of PMMA, resulting in a high resistance state (HRS) due to wider depletion region. At high reverse bias, however, electrons and holes can cross PMMA interlayer by Fowler-Nordeim tunneling due to a massive tilt of energy band, and then inject into the traps of ZnO and CuSCN, respectively. and trapped states are created, resulting in the formation of degenerate semiconductors on both sides of PMMA. Therefore, quantum tunneling and space charge polarization lead to a low resistance state (LRS). At relatively high forward bias, subsequently, the trapped states of and are recreated due to the opposite injection of charges, resulting in a recovery of HRS. The introduction of insulating interlayer at heterointerface, point a way to develop next-generation nonvolatile memories.
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Affiliation(s)
- Baochang Cheng
- School of Materials Science and Engineering, Nanchang University, Jiangxi 330031, P. R. China.,Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi 330031, P. R. China
| | - Jie Zhao
- School of Materials Science and Engineering, Nanchang University, Jiangxi 330031, P. R. China
| | - Li Xiao
- School of Materials Science and Engineering, Nanchang University, Jiangxi 330031, P. R. China
| | - Qiangsheng Cai
- School of Materials Science and Engineering, Nanchang University, Jiangxi 330031, P. R. China
| | - Rui Guo
- School of Materials Science and Engineering, Nanchang University, Jiangxi 330031, P. R. China
| | - Yanhe Xiao
- School of Materials Science and Engineering, Nanchang University, Jiangxi 330031, P. R. China
| | - Shuijin Lei
- School of Materials Science and Engineering, Nanchang University, Jiangxi 330031, P. R. China
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Zheng J, Cheng B, Wu F, Su X, Xiao Y, Guo R, Lei S. Modulation of surface trap induced resistive switching by electrode annealing in individual PbS micro/nanowire-based devices for resistance random access memory. ACS APPLIED MATERIALS & INTERFACES 2014; 6:20812-20818. [PMID: 25398100 DOI: 10.1021/am505101w] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Bipolar resistive switching (RS) devices are commonly believed as a promising candidate for next generation nonvolatile resistance random access memory (RRAM). Here, two-terminal devices based on individual PbS micro/nanowires with Ag electrodes are constructed, whose electrical transport depends strongly on the abundant surface and bulk trap states in micro/nanostructures. The surface trap states can be filled/emptied effectively at negative/positive bias voltage, respectively, and the corresponding rise/fall of the Fermi level induces a variation in a degenerate/nondegenerate state, resulting in low/high resistance. Moreover, the filling/emptying of trap states can be utilized as RRAM. After annealing, the surface trap state can almost be eliminated completely; while most of the bulk trap states can still remain. In the devices unannealed and annealed at both ends, therefore, the symmetrical back-to-back Fowler-Nordheim tunneling with large ON/OFF resistance ratio and Poole-Frenkel emission with poor hysteresis can be observed under cyclic sweep voltage, respectively. However, a typical bipolar RS behavior can be observed effectively in the devices annealed at one end. The acquirement of bipolar RS and nonvolatile RRAM by the modulation of electrode annealing demonstrates the abundant trap states in micro/nanomaterials will be advantageous to the development of new type electronic components.
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Affiliation(s)
- Jianping Zheng
- School of Materials Science and Engineering and ‡Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University , Nanchang, Jiangxi 330031, P. R. China
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Zhang C, Tian W, Xu Z, Wang X, Liu J, Li SL, Tang DM, Liu D, Liao M, Bando Y, Golberg D. Photosensing performance of branched CdS/ZnO heterostructures as revealed by in situ TEM and photodetector tests. NANOSCALE 2014; 6:8084-8090. [PMID: 24915978 DOI: 10.1039/c4nr00963k] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
CdS/ZnO branched heterostructures have been successfully synthesized by combining thermal vapour deposition and a hydrothermal method. Drastic optoelectronic performance enhancement of such heterostructures was revealed, compared to plain CdS nanobelts, as documented by comparative in situ optoelectronic studies on corresponding individual nanostructures using an originally designed laser-compatible transmission electron microscopy (TEM) technique. Furthermore, flexible thin-film based photodetectors based on standard CdS nanobelts and newly prepared CdS/ZnO heterostructures were fabricated on PET substrates, and comparative photocurrent and photo-responsivity measurements thoroughly verified the in situ TEM results. The CdS/ZnO branched heterostructures were found to have better performance than standard CdS nanobelts for optoelectronic applications with respect to the photocurrent to dark current ratio and responsivity.
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Affiliation(s)
- Chao Zhang
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.
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